KBU808G [WTE]
8.0A GLASS PASSIVATED BRIDGE RECTIFIER; 8.0A玻璃钝化整流桥
| 型号： | KBU808G |
| 厂家： | 
WON-TOP ELECTRONICS |
| 描述： | 8.0A GLASS PASSIVATED BRIDGE RECTIFIER |
| 文件： | 总3页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WTE
PO WER SEMICONDUCTORS
KBU800G – KBU810G
8.0A GLASS PASSIVATED BRIDGE RECTIFIER
Features
!
Glass Passivated Die Construction
A
!
!
!
!
!
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
Ideal for Printed Circuit Boards
B
C
KBU
Min
D
Dim
A
B
C
D
E
Max
23.70
4.10
4.70
2.20
11.30
6.80
5.60
—
22.70
3.80
4.20
1.70
10.30
4.50
4.60
25.40
—
K
L
-
~
~
+
E
G
H
J
J
G
Mechanical Data
!
!
Case: Molded Plastic
H
K
L
19.30
17.80
7.10
5.20
1.30
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Weight: 8.0 grams (approx.)
Mounting Position: Any
M
N
16.80
6.60
4.70
1.20
M
N
P
!
!
!
!
All Dimensions in mm
Marking: Type Number
P
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
KBU
800G
KBU
801G
KBU
802G
KBU
804G
KBU
806G
KBU
808G
KBU
810G
Characteristic
Symbol
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
35
100
70
200
140
400
600
420
800
560
1000
700
V
RMS Reverse Voltage
VR(RMS)
IO
280
8.0
V
A
Average Rectified Output Current
@TA = 65°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
200
A
Forward Voltage (per element)
@IF = 4.0A
VFM
IR
1.1
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 125°C
5.0
500
µA
°C
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
KBU800G – KBU810G
1 of 3
© 2002 Won-Top Electronics
8
100
6
4
2
10
1.0
Mounted on 4 X 4 inch
Copper PC Board
12.7 mm lead length
Tj = 25°C
Pulse width = 300 µs
0
0.1
0
50
100
150
0.6
0.8
1.0
1.2
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics, per element
1000
300
250
200
150
Tj = 25°C
f = 1 MHz
Tj = 125°C
8.3 ms Single half-sine-wave
100
100
50
0
10
1
100
10
0.1
1
10
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Forward Surge Current
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typ Junction Capacitance per element
10
Tj = 100°C
1.0
0.1
Tj = 25°C
0.01
0
40
80
120
PERCENT OF PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
KBU800G – KBU810G
2 of 3
© 2002 Won-Top Electronics
ORDERING INFORMATION
Product No.
KBU800G
Package Type
Shipping Quantity
SIL Bridge
SIL Bridge
SIL Bridge
SIL Bridge
SIL Bridge
SIL Bridge
SIL Bridge
400 Units/Box
400 Units/Box
400 Units/Box
400 Units/Box
400 Units/Box
400 Units/Box
400 Units/Box
KBU801G
KBU802G
KBU804G
KBU806G
KBU808G
KBU810G
Shipping quantity given is for minimum packing quantity only. For minimum order
quantity, please consult the Sales Department.
Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any
responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to
manufacturer. WTE reserves the right to change any or all information herein without further notice.
: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life
WARNING
support devices or systems without the express written approval.
Won-Top Electronics Co., Ltd.
No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan
Phone: 886-7-822-5408 or 886-7-822-5410
Fax: 886-7-822-5417
Email: sales@wontop.com
Internet: http://www.wontop.com
Wepoweryoureveryday.
KBU800G – KBU810G
3 of 3
© 2002 Won-Top Electronics
相关型号：
KBU808G-LF
Bridge Rectifier Diode, 1 Phase, 8A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, KBU, 4 PIN
WTE
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