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元器件品牌
NP352-83615
[YAMAICHI]
Fine Ball Grid Array (FBGA, 1.00mm Pitch); 精细球栅阵列（ FBGA ， 1.00毫米间距）
元器件型号：
NP352-83615
生产厂家：
YAMAICHI ELECTRONICS CO., LTD.
描述和应用：
Fine Ball Grid Array (FBGA, 1.00mm Pitch)
精细球栅阵列（ FBGA ， 1.00毫米间距）
栅
PDF文件：
总8页 (文件大小：559K)
下载文档：
下载PDF数据表文档文件
型号参数：NP352-83615参数
查看货源
NP352-87-1-1AC-28845
Fine Ball Grid Array (FBGA, 1.00mm Pitch)
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YAMAICHI
NP352-87--AC-27191
Fine Ball Grid Array (FBGA, 1.00mm Pitch)
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6
YAMAICHI
NP35N04YLG
MOS FIELD EFFECT TRANSISTOR
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14
RENESAS
NP35N04YLG-E1-AY
MOS FIELD EFFECT TRANSISTOR
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10
RENESAS
NP35N04YLG-E2-AY
MOS FIELD EFFECT TRANSISTOR
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6
RENESAS
NP35N04YUG
MOS FIELD EFFECT TRANSISTOR
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8
RENESAS
NP35N04YUG-E1-AY
MOS FIELD EFFECT TRANSISTOR
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5
RENESAS
NP35N04YUG-E2-AY
MOS FIELD EFFECT TRANSISTOR
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3
RENESAS
NP36N055HHE
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 36A I(D) | TO-251VAR
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ETC
NP36N055HHE-AY
TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,36A I(D),TO-251
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-
0
RENESAS
NP36N055HHE-AY
TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,36A I(D),TO-251
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0
RENESAS
NP36N055HHE-AZ
Power Field-Effect Transistor, 36A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, MP-3, 3 PIN
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0
NEC
NP36N055HLE
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 36A I(D) | TO-251VAR
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8
ETC
NP36N055HLE
Power Field-Effect Transistor, 36A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251, MP-3, 3 PIN
Warning
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0
NEC
NP36N055IHE
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 36A I(D) | TO-252VAR
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10
ETC
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