MT110C12T1 [YANGJIE]
Thyristor Module;
| 型号： | MT110C12T1 |
| 厂家： | 
YANGZHOU YANGJIE ELECTRONIC CO., LTD |
| 描述： | Thyristor Module |
| 文件： | 总4页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
MT110C-T1
COMPLIANT
Thyristor Module
VRRM / VDRM 800 to 1800V
ITAV
110A
Applications
Power Converters
Lighting Control
DC Motor Control and Drives
Heat and temperature control
Circuit
Features
7
6
International standard package
High Surge Capability
Glass passivated chip
Simple Mounting
Heat transfer through aluminum oxide DBC
ceramic isolated metal baseplate
1
2
3
5
4
UL recognized applied for file no. E360040
Module Type
TYPE
VRRM
VRSM
MT110C08T1
MT110C12T1
MT110C16T1
MT110C18T1
800V
1200V
1600V
1800V
900V
1300V
1700V
1900V
Maximum Ratings
Symbol
Conditions
Values
Units
ITAV
Sine 180o;Tc=85℃
110
A
TVJ =45℃ t=10ms, sine
TVJ =125℃ t=10ms, sine
2250
1900
ITSM
i2t
A
TVJ =45℃ t=10ms, sine
TVJ =125℃ t=10ms, sine
25000
18000
A2s
Visol
Tvj
a.c.50HZ;r.m.s.;1min
3000
V
-40 to 130
-40 to 125
3±15%
5±15%
℃
Tstg
Mt
℃
To terminals(M5)
To heatsink(M6)
Nm
Nm
Ms
TVJ= TVJM , 2/3VDRM ,IG =500mA
Tr<0.5us,tp>6us
di/dt
150
A/us
dv/dt
a
TJ= TVJM ,2/3VDRM, linear voltage rise
Maximum allowable acceleration
Module(Approximately)
1000
50
V/us
m/s2
g
Weight
100
Thermal Characteristics
Symbol
Rth(j-c)
Conditions
Cont.;per thyristor / per module
Values
0.28/0.14
0.2/0.1
Units
℃/W
Rth(c-s)
per thyristor / per module
℃/W
S-M037
www.21yangjie.com
Rev.2.0, 27-May-17
1
RoHS
MT110C-T1
COMPLIANT
Electrical Characteristics
Values
Typ.
Symbol
Conditions
Units
Min.
Max.
1.65
20
VTM
T=25℃ ITM =300A
V
mA
V
IRRM/IDRM
VTO
rT
TVJ =TVJM ,VR=VRRM ,VD=VDRM
For power-loss calculations only (TVJ =125℃)
TVJ =TVJM
0.9
2
mΩ
V
VGT
IGT
TVJ =25℃ , VD =6V
3
TVJ =25℃ , VD =6V
150
0.25
6
mA
V
VGD
IGD
TVJ =125℃ , VD =2/3VDRM
TVJ =125℃ , VD =2/3VDRM
TVJ =25℃ , RG = 33 Ω
TVJ =25℃ , VD =6V
mA
mA
mA
us
IL
300
150
1
600
250
IH
tgd
tq
TVJ =25℃, IG=1A, diG/dt=1A/us
TVJ =TVJM
us
100
S-M037
Rev.2.0, 27-May-17
www.21yangjie.com
2
RoHS
MT110C-T1
COMPLIANT
Performance Curves
200
A
200
W
sin.180
rec.120
DC
160
DC
150
rec.60
120
80
rec.30
sin.180
100
rec.120
rec.60
50
rec.30
40
PTAV
0
ITAVM
0
0
ITAV
50
100
A 150
0
Tc
50
100
℃ 130
Fig1. Power dissipation
Fig2.Forward Current Derating Curve
2500
A
0.50
50HZ
Zth(j-S)
Zth(j-C)
℃/ W
0.25
1250
0
0
0.001
t
0.01
0.1
1
10
S
100
10
100
ms 1000
Fig3. Transient thermal impedance
Fig4. Max Non-Repetitive Forward Surge Current
300
2
ITSM(45℃ =2250A
A
Typ.
)
KA
ITSM(125℃ =1900A
)
max.
1.6
200
0×VRRM
0.5×VRRM
1.2
1×VRRM
100
0.8
25℃
ITSM
IT
0
- - -125℃
0.4
0
VTM
0.5
1.0
1.5
V
2.0
1
t
10
100
1000
Fig6. Surge overload current vs. Cycles
www.21yangjie.com
Fig5. Forward Characteristics
S-M037
Rev.2.0, 27-May-17
3
RoHS
MT110C-T1
COMPLIANT
100
V
1/2·MT110C18T1
20V;20Ω
100
W
(
10
50
W
0
.
5
ms
(
8
)
ms
)
VGT
∧
PG(tp)
1
-40℃
Tvj
25℃
125℃
IGT
VGD125
℃
VG
IGD125
℃
0.1
0.001 IG
0.01
0.1
1
10
A 100
Fig7. Gate trigger Characteristics
Package Outline Information
CASE: T1
YJ
Dimensions in mm
S-M037
www.21yangjie.com
Rev.2.0, 27-May-17
4
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