MT200CB16T3 [YANGJIE]
Silicon Controlled Rectifier,;
| 型号： | MT200CB16T3 |
| 厂家： | 
YANGZHOU YANGJIE ELECTRONIC CO., LTD |
| 描述： | Silicon Controlled Rectifier, |
| 文件： | 总3页 (文件大小：393K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
MT200CB-T3
COMPLIANT
Thyristor Modules
VRRM / VDRM 800 to 1800V
ITAV
200A
Applications
Power Converters
Lighting Control
DC Motor Control and Drives
Heat and temperature control
Circuit
Features
International standard package
High Surge Capability
Simple Mounting
Module Type
TYPE
VRRM
VRSM
MT200CB08T3
MT200CB12T3
MT200CB16T3
MT200CB18T3
800V
1200V
1600V
1800V
900V
1300V
1700V
1900V
Maximum Ratings
Symbol
Conditions
Values
Units
ITAV
Sine 180o 50HZ;Tc=85℃
200
A
ITSM
i2t
7.2
KA
10ms half sinewave
VR=60%VRRM
264000
A2s
Visol
Tstg
a.c.50HZ;r.m.s.;1min
2500
V
-40 to 140
℃
Fm
4.5
N.m
g
Weight
Module(Approximately)
900
Thermal Characteristics
Symbol
Conditions
Values
Units
Rth(j-c)
per module
0.14
℃/W
S-M184
www.21yangjie.com
Rev.2.0, 27-May-17
1
RoHS
MT200CB-T3
COMPLIANT
Electrical Characteristics
Symbol
Values
Typ.
Conditions
Units
Min.
Max.
1.5
VTM
VTO
T=125℃ ITM =600A
T=125℃
V
V
0.8
VDRM
VRRM
VDRM&VRRM tp=10ms
VDSM&VRSM= VDRM&VRRM+200V
600
1600
30
V
IRRM
IDRM
At VDRM
At VRRM
mA
From 67%VDRM
To 600A，Gate source 1.5A
tr≤0.5us Repetitive
di/dt
150
A/us
dv/dt
VGT
IGT
VDM=67%VDRM
800
2.5
V/us
V
0.8
30
20
IA=1A , VA =12V
180
100
0.2
mA
mA
V
IH
TVJ =25℃ , VD =12V
VGD
At 67%VDRM
Performance Curves
Fig1. Power dissipation
Fig2.Transient thermal impedance
℃
Time S
S-M184
www.21yangjie.com
Rev.2.0, 27-May-17
2
RoHS
MT200CB-T3
COMPLIANT
Fig3. Surge Current
Fig4. Gate characteristic
Cycles at 50HZ
Gate current, IGT
A
Package Outline Information
CASE: T3
Dimensions in mm
S-M184
www.21yangjie.com
Rev.2.0, 27-May-17
3
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