SS52 [YANGJIE]
Schottky Rectifier; 肖特基整流器器型号: | SS52 |
厂家: | YANGZHOU YANGJIE ELECTRONIC CO., LTD |
描述: | Schottky Rectifier |
文件: | 总2页 (文件大小:152K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SS52 THRU SS56
肖特基二极管 Schottky Rectifier
■特征
●Io
Features
■外形尺寸和印记 Outline Dimensions and Mark
5.0A
DO-214AB(SMC)
●VRRM
20V-60V
Mounting Pad Layout
.129(3.27)
.112(2.85)
.245(6.22)
.220(5.59)
● 耐正向浪涌电流能力高
High surge current capability
● 封装:模压塑料
0.151
(3.84)
.280(7.11)
.260(6.60)
0.150
(3.82)
Cases: Molded plastic
.103(2.61)
.078(1.99)
0.119(3.03)
0.390
(9.90)
.012(0.31)
.006(0.15)
.008(0.20)
.060(1.52)
.004(0.10)
.030(0.76)
■用途 Applications
.320(8.13)
.305(7.75)
●整流用 Rectifier
Dimensions in inches and (millimeters)
■极限值(绝对最大额定值)
Limiting Values (Absolute Maximum Rating)
参数名称
符号
单位
测试条件
SS52 SS53 SS54 SS55 SS56
Item
Symbol
Unit
Test Conditions
反向重复峰值电压
Repetitive Peak Reverse Voltage
VRRM
V
20
30
40
50
60
正弦半波60Hz,电阻负载,TL(Fig.1)
60HZ Half-sine wave, Resistance
load, TL(Fig.1)
正向平均电流
Average Forward Current
IF(AV)
A
3.0
正向(不重复)浪涌电流
Surge(Non-repetitive)Forward
Current
正弦半波60Hz,一个周期,Ta=25℃
60Hz Half-sine wave ,1 cycle ,
Ta =25℃
IFSM
A
150
结温
Junction Temperature
储存温度
TJ
℃
℃
-55~+150
TSTG
-55 ~ +150
Storage Temperature
■电特性 (Ta=25℃ 除非另有规定)
Electrical Characteristics (T =25℃ Unless otherwise specified)
a
参数名称
Item
符号
Symbol
单位
Unit
测试条件
Test Condition
SS52 SS53 SS54 SS55 SS56
正向峰值电压
Peak Forward Voltage
VF
IF =5.0A
V
0.55
0.6
0.70
IRRM1
IRRM2
T =25℃
0.5
50
a
反向漏电流
Peak Reverse Current
mA
VRM=VRRM
T =100℃
a
结和环境之间
Between junction and ambient
601)
201)
Rθ
热阻(典型)
Thermal
Resistance(Typical)
J-A
℃/W
结和终端之间
Between junction and terminal
Rθ
J-L
备注:Notes:
1) 热阻从结到环境及从结到引线,在电路板的
0.6" x 0.6" (16毫米 x 16毫米)铜垫片区
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.6" x 0.6" (16 mm x 16 mm) copper
pad areas
Document Number 0232
Rev. 1.0, 22-Sep-11
www.21yangjie.com
扬州扬杰电子科技股份有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd.
SS52 THRU SS56
■特性曲线(典型) Characteristics(Typical)
图2:最大正向浪涌冲击耐受力
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
图1:正向电流降额曲线
FIG.1: FORWARD CURRENT DERATING CURVE
250
200
150
100
50
6.0
5.0
4.0
3.0
2.0
1.0
0
8.3毫秒正弦半波
8.3ms Single Half Sine Wave
JEDEC Method
Resistive or Inductive Load
P.C.B. Mounted on 0.6"×0.6"
(16mm×16mm)Copper Pad Areas
0
0
1
2
10
20
100
25
50
75
100
125
150
TL(℃)
周波数
Number of Cycles
图3: 典型正向特性曲线
FIG.3: TYPICAL FORWARD CHARACTERISTICS
图4:典型反向特性曲线
FIG.4:TYPICAL REVERSE CHARACTERISTICS
100
10
TJ=25℃
Pulse width=300us
1% Duty Cycle
Tj=100℃
Tj=75℃
1.0
10
0.1
1.0
0.1
Tj=25℃
0.01
SS52-SS33
SS34
SS55-SS56
0.001
0
20
40
60
80
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VF(V)
Voltage(%)
Document Number 0232
Rev. 1.0, 22-Sep-11
www.21yangjie.com
扬州扬杰电子科技股份有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd.
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 200V V(RRM), Silicon, DO-214AB, SMC, 2 PIN
YANGJIE
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