YJ2N60CH [YANGJIE]
N-Channel Enhancement Mode Mosfet;
| 型号： | YJ2N60CH |
| 厂家： | 
YANGZHOU YANGJIE ELECTRONIC CO., LTD |
| 描述： | N-Channel Enhancement Mode Mosfet |
| 文件： | 总11页 (文件大小：908K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
COMPLIANT
YJ2N60
N-Channel Enhancement Mode Mosfet
Feature:
Low Crss
Low Gate Charge
Fast Switching
Improved ESD Capability
Improved dv/dt Capability
100% Avalanche Energy Test
Mechanical Data:
Package： MOS
Molding compound meets UL 94 V-0 flammability rating,
RoHS-compliant
Terminal：Tin plated leads，
Solderable per J-STD-002 and JESD22-B102
Polarity： As marked on body
Ordering Information
■
PACKING
CODE
MINIIMUM
INNER BOX
OUTER CARTON DELIVERY
P/N
PACKAGE
UNIT WEIGHT(g)
PACKAGE(pcs) QUANTITY(pcs) QUANTITY(pcs)
MODE
YJ2N60CI
YJ2N60CZ
YJ2N60CM
YJ2N60CH
YJ2N60CP
ITO-220AB
TO-220AB
TO-263
B1
B1
B1
B1
F1
Approximate 1.7
Approximate 2.0
Approximate 1.4
Approximate 0.4
Approximate 0.4
50
50
1000
1000
1000
4500
5000
5000
5000
TUBE
TUBE
TUBE
TUBE
50
5000
TO-251
75
22500
25000
TO-252
2500
1 / 11
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-D062
Rev.1.0,16-Feb-19
www.21yangjie.com
RoHS
COMPLIANT
YJ2N60
(T =25℃ Unless otherwise specified
■
Maximum Ratings
)
a
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
600
V
Tc=25℃
2*
Continues Drain Current
ID
A
Tc=100℃
1.3*
Plused Drain Current (note 1)
Gate-to-Source Voltage
IDM
VGS
EAS
IAR
8
A
V
±30
Single Pulsed Avalanche Energy (note 2)
Avalanche Current (note 1)
120
mJ
A
2.0
Repetitive Avalanche Energy (note 1)
Peak Diode Recovery (note 3)
EAR
dv/dt
10
mJ
V/ns
4.5
TO-220AB
ITO-220AB
54
PD
Power Dissipation
23
W
Tc=25℃
TO-251/TO-252
TO-220AB
44
0.8
0.26
PD(DF)
Power Dissipation Derating Factor
ITO-220AB
W/℃
Above 25℃
TO-251/TO-252
0.39
Operating and Storage Temperature Range
Maximum Temperature for Soldering
TJ，TSTG
TL
150，-55～+150
300
℃
℃
（T =25℃ Unless otherwise specified）
■Electrical Characteristics
a
Off-Characteristics
Parameter
Symbol
Tests Conditions
ID=250μA, VGS=0V
Min
Type
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
600
-
-
-
V
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
△
BVDSS
/
△
TJ
ID=250μA, referenced to 25℃
VDS=600V,VGS=0V, TC=25℃
VDS=480V, TC=125℃
-
-
-
-
-
0.7
V/℃
μA
-
-
-
-
1
IDSS
10
100
-100
Gate-body leakage current, forward
Gate-body leakage current, reverse
IGSSF
IGSSR
VDS=0V, VGS =30V
nA
nA
VDS=0V, VGS = -30V
2 / 11
S-D062
Rev.1.0,16-Feb-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
RoHS
COMPLIANT
YJ2N60
On-Characteristics
Parameter
Symbol
VGS(th)
RDS(ON)
gfs
Tests Conditions
VDS = VGS , ID=250μA
VGS =10V , ID=1.0A
Min
Type
-
Max
4.0
4.5
-
Unit
V
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
2.0
-
-
3.5
2.0
Ω
V
DS = 40V, ID=1.0A（note4）
S
Dynamic Characteristics
Parameter
Symbol
Ciss
Tests Conditions
Min
Type
Max
480
Unit
pF
Input capacitance
-
-
-
380
40
6
Output capacitance
Coss
VDS=25V, VGS =0V, f=1.0MHz
52
8
pF
Reverse transfer capacitance
Crss
pF
Switching Characteristics
Parameter
Symbol
td(on)
tr
Tests Conditions
Min
Type
16
Max
40
110
80
95
14
-
Unit
ns
Turn-On delay time
Turn-On rise time
-
-
-
-
-
-
-
50
ns
VDD=300V, ID=2A, RG=25Ω
（note 4，5）
Turn-Off delay time
Turn-Off Fall time
td(off)
tf
40
ns
45
ns
Total Gate Charge
Gate-Source charge
Gate-Drain charge
Qg
10
nC
nC
nC
V
DS =480V , ID=2A, VGS =10V
Qgs
Qgd
2.1
5.5
（note 4，5）
-
Drain-Source Diode Characteristics and Maximum Ratings
Parameter
Symbol
Tests Conditions
Min
Type
Max
Unit
Maximum Continuous Drain-Source Diode
Forward Current
IS
-
-
2
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
-
-
8
A
Drain-Source Diode Forward Voltage
Reverse recovery time
VSD
trr
VGS=0V, IS=2A
-
-
-
-
1.4
V
260
1.2
-
-
ns
μC
VGS=0V, IS=2A
dIF/dt=100A/μs (note 4)
Reverse recovery charge
Qrr
3 / 11
S-D062
Rev.1.0,16-Feb-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
RoHS
COMPLIANT
YJ2N60
Thermal Characteristics （T =25℃ Unless otherwise specified）
■
a
Parameter
Symbol
Max
2.32
5.5
Unit
TO-220AB
ITO-220AB
Thermal Resistance，Junction to Case
Thermal Resistance，Junction to Ambient
Rth(j-c)
Rth(j-A)
℃/W
TO-251/TO-252
TO-220AB
2.87
62.5
62.5
110
ITO-220AB
℃/W
TO-251/TO-252
* Drain current limited by maximum junction temperature
Notes:
1：Pulse width limited by maximum junction temperature
2：L=55mH, IAS=2A, VDD=50V, RG=25Ω, Starting TJ=25℃
3：ISD ≤2A, di/dt ≤300A/μs, VDD≤BVDSS, Starting TJ=25℃
4：Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2％
5：Essentially independent of operating temperature
Characteristics (Typical)
■
Fig. 1 On-State Characteristics
Fig. 2 Transfer Characteristics
4 / 11
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-D062
Rev.1.0,16-Feb-19
www.21yangjie.com
RoHS
COMPLIANT
YJ2N60
Fig. 3 Breakdown Voltage Variation vs Temperature
Fig. 4 On-Resistance Variation vs Temperature
Fig. 5 Capacitance Characteristics
Fig. 6 Gate Charge Characteristics
Fig. 7 Maximum Safe Operating Area
Fig. 8 Maximum Drain Current vs Case Temperature
5 / 11
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-D062
Rev.1.0,16-Feb-19
www.21yangjie.com
RoHS
COMPLIANT
YJ2N60
Fig. 9 Transient Thermal Response Curve(TO-251/TO-252)
Fig. 10 Transient Thermal Response Curve(ITO-220)
Fig. 11 Transient Thermal Response Curve(TO-220AB)
6 / 11
S-D062
Rev.1.0,16-Feb-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
RoHS
COMPLIANT
YJ2N60
■ Outline Dimensions
ITO-220AB
Symbol
A
Min
Max
Symbol
D
Min
Max
9.96
10.36
2.54
A1
A2
A3
B1
B2
B3
C
7.00
D1
1.15
0.70
0.28
2.34
1.35
0.90
0.48
2.74
3.08
9.25
15.70
4.50
6.20
3.20
15.20
9.75
3.28
9.65
D2
D3
16.10
4.90
E
E1
0.70
6.80
E2
1.0×45°
3.40
E3
0.36
2.55
0.65
2.95
C1
C2
16.00
10.15
E4
a(度）
30°
7 / 11
S-D062
Rev.1.0,16-Feb-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
RoHS
COMPLIANT
YJ2N60
TO-220AB
Symbol
Min
4.4
Normal
Max
Symbol
Min
Normal
2.54
5.08
6.5
13.38
/
Max
A
A1
A2
b
4.5
1.3
2.4
/
4.6
1.33
2.5
e
e1
1.27
2.3
H1
6.3
13.0
/
6.7
13.5
3.5
0.7
0.9
L
b1
c
1.25
0.45
15.3
9.1
1.42
0.6
L1
0.5
15.7
9.2
L2
4.6
3.6
/
D
16.1
9.3
ΦP
Q
3.55
2.73
1
3.65
2.87
5
D1
E
9.7
9.9
10.2
θ1（°）
3
8 / 11
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-D062
Rev.1.0,16-Feb-19
www.21yangjie.com
RoHS
COMPLIANT
YJ2N60
TO-251
Symbol
A
Min
6.40
5.20
4.40
6.00
0.55
0.60
Max
6.60
5.40
4.60
6.20
0.65
0.90
Symbol
D1
Min
0.45
1.51
Max
0.55
1.61
A1
A2
B
D2
e
2.30
E
2.20
0.49
2.40
0.59
b1
b2
b3
b4
C
F
G
1.70
8.00
8.00
8.00
0.80
α1(度)
α2(度)
α3(度)
0.95
0.90
9.15
1.05
0.96
9.55
D
9 / 11
S-D062
Rev.1.0,16-Feb-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
RoHS
COMPLIANT
YJ2N60
TO-252
Symbol
Min
6.40
5.20
4.40
4.40
0.00
4.65
6.00
1.57
0.90
0.60
Max
6.60
5.40
4.60
4.60
0.15
4.95
6.20
1.77
0.96
0.90
Symbol
Min
2.90
0.45
0.45
Max
3.10
0.55
0.55
A
A1
A2
A3
A4
A5
B
D
D1
D2
e
2.30
1.70
E
2.20
0.49
2.40
0.59
F
G
B1
C
L
1.40
0.00
0.49
1.60
10.00
0.52
θ(度)
H
I
10 / 11
S-D062
Rev.1.0,16-Feb-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
RoHS
COMPLIANT
YJ2N60
Disclaimer
The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the
right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or
otherwise.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with
equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as
medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety
devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of
sale.
This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http://
www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance.
11 / 11
S-D062
Rev.1.0,16-Feb-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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