YJ7N70CH [YANGJIE]
N-Channel Enhancement Mode Mosfet;
| 型号： | YJ7N70CH |
| 厂家： | 
YANGZHOU YANGJIE ELECTRONIC CO., LTD |
| 描述： | N-Channel Enhancement Mode Mosfet |
| 文件： | 总11页 (文件大小：1227K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
COMPLIANT
YJ7N70
N-Channel Enhancement Mode Mosfet
Feature:
Low Crss
Low Gate Charge
Fast Switching
Improved ESD Capability
Improved dv/dt Capability
100% Avalanche Energy Test
\
Mechanical Data:
Package： MOS
Molding compound meets UL 94 V-0 flammability rating,
RoHS-compliant
Terminal：Tin plated leads，
Solderable per J-STD-002 and JESD22-B102
Polarity： As marked on body
Ordering Information
■
PACKING
CODE
MINIIMUM
INNER BOX
OUTER CARTON DELIVERY
P/N
PACKAGE
UNIT WEIGHT(g)
PACKAGE(pcs) QUANTITY(pcs) QUANTITY(pcs)
MODE
YJ7N70CI
YJ7N70CZ
YJ7N70CH
YJ7N70CM
ITO-220AB
TO-220AB
TO-251
B1
B1
B1
B1
Approximate 1.7
Approximate 2.0
Approximate 0.4
Approximate 1.4
50
50
75
50
1000
1000
4500
1000
5000
5000
22500
5000
TUBE
TUBE
TUBE
TUBE
TO-263
1 / 11
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-D060
Rev.1.1,11-Mar-19
www.21yangjie.com
RoHS
COMPLIANT
YJ7N70
(T =25℃ Unless otherwise specified
■
Maximum Ratings
)
a
Parameter
Symbol
Value
700
7*
Unit
Drain-Source Voltage
VDSS
V
Tc=25℃
Continues Drain Current
ID
A
Tc=100℃
3.6*
24
Plused Drain Current (note 1)
Gate-to-Source Voltage
IDM
VGS
EAS
IAR
A
V
±30
210
7.0
Single Pulsed Avalanche Energy (note 2)
Avalanche Current (note 1)
mJ
A
Repetitive Avalanche Energy (note 1)
Peak Diode Recovery (note 3)
EAR
dv/dt
10
mJ
V/ns
4.5
TO-220AB/TO-251/
TO-263
100
33
PD
Power Dissipation
W
Tc=25℃
ITO-220AB
TO-220AB/TO-251/
TO-263
0.8
PD(DF)
Power Dissipation Derating Factor
W/℃
Above 25℃
ITO-220AB
0.26
150，-55～+150
300
Operating and Storage Temperature Range
Maximum Temperature for Soldering
TJ，TSTG
TL
℃
℃
（T =25℃ Unless otherwise specified）
■Electrical Characteristics
a
Off-Characteristics
Parameter
Symbol
BVDSS
Tests Conditions
ID=250μA, VGS=0V
Min
Type
Max
Unit
V
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
700
-
-
-
△BVDSS/△TJ
ID=250μA, referenced to 25℃
VDS=700V,VGS=0V, TC=25℃
VDS=560V, TC=125℃
-
-
-
-
-
0.7
V/℃
-
-
-
-
1
Zero Gate Voltage Drain Current
IDSS
μA
10
100
-100
Gate-body leakage current, forward
Gate-body leakage current, reverse
IGSSF
IGSSR
VDS=0V, VGS =30V
nA
nA
VDS=0V, VGS = -30V
2 / 11
S-D060
Rev.1.1,11-Mar-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
RoHS
COMPLIANT
YJ7N70
On-Characteristics
Parameter
Symbol
VGS(th)
RDS(ON)
gfs
Tests Conditions
Min
Type
-
Max
Unit
V
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
VDS = VGS , ID=250μA
2.0
4.0
1.6
-
VGS =10V , ID=35A
-
-
1.4
7.0
Ω
V
DS = 40V, ID=3.5A（note4）
S
Dynamic Characteristics
Parameter
Symbol
Ciss
Tests Conditions
Min
Type
800
75
Max
1280
145
18
Unit
pF
Input capacitance
-
-
-
Output capacitance
Coss
VDS=25V, VGS =0V, f=1.0MHz
pF
Reverse transfer capacitance
Crss
11
pF
Switching Characteristics
Parameter
Symbol
td(on)
tr
Tests Conditions
Min
Type
30
Max
66
Unit
ns
Turn-On delay time
Turn-On rise time
-
-
-
-
-
-
-
72
158
248
165
56
ns
VDD=350V, ID=7A, RG=25Ω
（note 4，5）
Turn-Off delay time
Turn-Off Fall time
td(off)
tf
123
81
ns
ns
Total Gate Charge
Gate-Source charge
Gate-Drain charge
Qg
42
nC
nC
nC
V
DS =560V , ID=7A, VGS =10V
Qgs
Qgd
7.0
11
-
（note 4，5）
-
Drain-Source Diode Characteristics and Maximum Ratings
Parameter
Symbol
Tests Conditions
Min
Type
Max
Unit
Maximum Continuous Drain-Source Diode
Forward Current
IS
-
-
7
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
-
-
24
A
Drain-Source Diode Forward Voltage
Reverse recovery time
VSD
trr
VGS=0V, IS=7A
-
-
-
-
1.4
V
340
2.7
-
-
ns
μC
VGS=0V, IS=7A
dIF/dt=100A/μs (note 4)
Reverse recovery charge
Qrr
3 / 11
S-D060
Rev.1.1,11-Mar-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
RoHS
COMPLIANT
YJ7N70
Thermal Characteristics （T =25℃ Unless otherwise specified）
■
a
Parameter
Symbol
TO-220AB/TO-251T
Max
1.25
3.79
62.5
62.5
Unit
O-263
Thermal Resistance，Junction to Case
Rth(j-c)
Rth(j-A)
℃/W
ITO-220AB
TO-220AB/TO-251/T
O-263
Thermal Resistance，Junction to Ambient
℃/W
ITO-220AB
* Drain current limited by maximum junction temperature
Notes:
1：Pulse width limited by maximum junction temperature
2：L=11mH, IAS=7A, VDD=50V, RG=25Ω, Starting TJ=25℃
3：ISD ≤7A, di/dt ≤300A/μs, VDD≤BVDSS, Starting TJ=25℃
4：Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2％
5：Essentially independent of operating temperature
Characteristics (Typical)
■
Fig. 1 On-State Characteristics
Fig. 2 Transfer Characteristics
4 / 11
S-D060
Rev.1.1,11-Mar-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
RoHS
COMPLIANT
YJ7N70
Fig. 3 Breakdown Voltage Variation vs Temperature
Fig. 4 On-Resistance Variation vs Temperature
Fig. 5 Capacitance Characteristics
Fig. 6 Gate Charge Characteristics
Fig. 7 Maximum Safe Operating Area
Fig. 8 Maximum Drain Current vs Case Temperature
5 / 11
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-D060
Rev.1.1,11-Mar-19
www.21yangjie.com
RoHS
COMPLIANT
YJ7N70
Fig. 9 Transient Thermal Response Curve(TO-220AB/TO-251)
Fig. 10 Transient Thermal Response Curve(ITO-220AB)
6 / 11
S-D060
Rev.1.1,11-Mar-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
RoHS
COMPLIANT
YJ7N70
■ Outline Dimensions
ITO-220AB
Symbol
Min
Max
Symbol
Min
Max
A
9.96
10.36
D
D1
2.54
A1
A2
A3
B1
B2
B3
C
7.00
1.15
0.70
0.28
2.34
1.35
0.90
0.48
2.74
3.08
9.25
15.70
4.50
6.20
3.20
15.20
9.75
3.28
9.65
D2
D3
16.10
4.90
E
E1
0.70
6.80
E2
1.0×45°
3.40
E3
0.36
2.55
0.65
2.95
C1
C2
16.00
10.15
E4
a(度）
30°
7 / 11
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-D060
Rev.1.1,11-Mar-19
www.21yangjie.com
RoHS
COMPLIANT
YJ7N70
TO-220AB
Symbol
Min
4.4
Normal
Max
Symbol
Min
Normal
2.54
Max
A
A1
A2
b
4.5
1.3
2.4
/
4.6
1.33
2.5
e
e1
5.08
1.27
2.3
H1
6.3
13.0
/
6.5
13.38
/
6.7
13.5
3.5
0.7
0.9
L
b1
c
1.25
0.45
15.3
9.1
1.42
0.6
L1
4.6
0.5
15.7
9.2
L2
D
16.1
9.3
ΦP
Q
3.55
2.73
1
3.6
/
3.65
2.87
5
D1
E
θ1（°）
9.7
9.9
10.2
3
8 / 11
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-D060
Rev.1.1,11-Mar-19
www.21yangjie.com
RoHS
COMPLIANT
YJ7N70
TO-251
Symbol
A
Min
Max
6.60
5.40
4.60
6.20
0.65
0.90
Symbol
Min
0.45
1.51
Max
0.55
1.61
6.40
5.20
4.40
6.00
0.55
0.60
D1
D2
A1
A2
B
2.30
e
2.20
0.49
2.40
0.59
E
b1
b2
b3
b4
C
F
1.70
8.00
8.00
8.00
G
α1(度)
α2(度)
α3(度)
0.80
0.95
0.90
9.15
1.05
0.96
9.55
D
9 / 11
S-D060
Rev.1.1,11-Mar-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
RoHS
COMPLIANT
YJ7N70
TO-263
10 / 11
S-D060
Rev.1.1,11-Mar-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
RoHS
COMPLIANT
YJ7N70
Disclaimer
The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the
right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or
otherwise.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with
equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as
medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety
devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of
sale.
This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http://
www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance.
11 / 11
S-D060
Rev.1.1,11-Mar-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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