B6S [YEASHIN]
MINI SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER; MINI表面安装玻璃钝化单相桥式整流器
| 型号： | B6S |
| 厂家： | 
Yea Shin Technology Co., Ltd |
| 描述： | MINI SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER |
| 文件： | 总2页 (文件大小：394K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
SEMICONDUCTOR
B1S THRU B10S
MINI SURFACE MOUNT GLASS PASSIVATED
SINGLE-PHASE BRIDGE RECTIFIER
VOLTAGE 100 to 1000Volts CURRENT 0.5 Amperes
MDI Unit:inch(mm)
FEATURES
‧ Plastic material used carries Underwriters
Laboratory recognition 94V-O
‧ Low leakage
+
.157(4.0)
.142(3.6)
.008(0.2)
‧ Surge overload rating-- 30 amperes peak
‧ Ideal for printed circuit board
~
~
‧ Exceeds environmental standards of MIL-S-19500
‧ High temperature soldering : 260OC / 10 seconds at terminals
‧ Pb free product at available : 99% Sn above meet RoHS
.275(7.0)
MAX
.031(0.8)
.019(0.5)
environment substance directive request
.043(1.1)
.027(0.7)
.193(4.9)
.177(4.5)
MECHANICAL DATA
.106(2.7)
.090(2.3)
‧ Case: Reliable low cost construction utilizing molded plastic technique results in
inexpensive product
‧ Terminals: Lead solderable per MIL-STD-202, Method 208.
‧ Polarity: Polarity symbols molded or marking on body.
‧ Mounting Position: Any.
.106(2.7)
.090(2.3)
‧ Weight: 0.008 ounce, 0.22 gram.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, Resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
SYMBOL
VRRM
VRMS
VDC
B1S
100
70
B2S
200
140
200
B4S
400
280
400
B6S
600
420
600
B8S
800
560
800
B10S UNITS
1000
700
V
V
V
100
1000
Maximum Average Forward Current TA=40℃
TA=25℃(Note 3)
0. 5
0.8*
IAV
A
A
Peak Forward Surge Current:8.3ms single half sine-wave
superimposed on rated load (JEDEC method)
I2t Rating for fusing (t<8.35ms)
IFSM
35
I2t
3.735
A2t
V
Maximum Forward Voltage Drop per Bridge Element at 0.5A
Maximum DC Reverse Current TJ=25℃
at Rated DC Blocking Voltage TJ=125℃
Typical Junction capacitance (Note 1)
VF
1.0
5.0
IR
uA
pF
500
CJ
25
85
Rθ A J
Rθ L J
Typical thermal resistance per leg (Note2)
℃/W
℃
20
Operating Junction and Storage Temperature Range
NOTES:
TJ, TSTG
-55 to +150
1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
2. Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 X 0.5"(13 X 13mm) copper pads
3. * R-load on alumina subtrate Ta=25oC
http://www.yeashin.com
1
REV.02 20120305
DEVICE CHARACTERISTICS
B1S THRU B10S
1.00
50
40
30
0.75
0.50
0.25
0
20
10
1
8
4
60
80 100
6
2
40
10
20
20
40
60
80
100
120
140 150
AMBIENT TEMPERATURE, O
C
NUMBER OF CYCLES AT 60Hz
Fig.1 MAXIMUM NON-REPETITIVE SURGE CURRENT
Fig.2 DERATING CURVE FOR OUTPUT RECTIFIED CURRENT
10
10
TJ= C
125O
1.0
1.0
0.1
0.1
TJ
=25OC
0.01
0
20
40
60
80
100
120
140
0.01
0.4
0.6
0.8
1.0
1.2
1.4
PERCENTAGE OF PEAK REVERSE VOLTAGE, %
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
Fig.3 TYPICAL FORWARD CHARACTERISTICS
Fig.4 TYPICAL REVERSE CHARACTEISTICS
http://www.yeashin.com
2
REV.02 20120305
相关型号：
B6S-80
Bridge Rectifier Diode, 1 Phase, 0.5A, 600V V(RRM), Silicon, TO-269AA, MINIATURE, PLASTIC, MBS, 4 PIN
VISHAY
B6S-E3
DIODE 0.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, TO-269AA, LEAD FREE, MINIATURE, PLASTIC, MBS, 4 PIN, Bridge Rectifier Diode
VISHAY
B6S-E3/80
DIODE 0.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, TO-269AA, ROHS COMPLIANT, PLASTIC, MBS, 4 PIN, Bridge Rectifier Diode
VISHAY
B6SE3
DIODE 0.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, TO-269AA, LEAD FREE, MINIATURE, PLASTIC, MBS, 4 PIN, Bridge Rectifier Diode
VISHAY
©2020 ICPDF网 联系我们和版权申明