BZT52C51 [YEASHIN]
ZENER DIODE; 稳压二极管型号: | BZT52C51 |
厂家: | Yea Shin Technology Co., Ltd |
描述: | ZENER DIODE |
文件: | 总3页 (文件大小:529K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
BZT52C2V4-BZT52C51
SEMICONDUCTOR
SOD-123 Plastic-Encapsulate Diode
ZENER DIODE
SOD123
Unit:inch(mm)
FEATURES
‧ Planar Die Construction
‧ 500mW Power Dissipation on Ceramic PCB
‧ General Purpose Medium Current
‧ Ideally Suited for Automated Assembly
Processes
‧ High temperature soldering : 260OC / 10 seconds at terminals
‧ Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.250
0.100
1.150
0.650
0.150
1.700
2.800
3.850
Min
Max
0.049
0.004
0.045
0.026
0.006
0.067
0.110
0.152
A
A1
A2
b
1.050
0.000
1.050
0.450
0.080
1.500
2.600
3.550
0.041
0.000
0.041
0.018
0.003
0.059
0.102
0.140
c
D
E
E1
L
0.500 REF
0.020 REF
L1
θ
0.250
0°
0.450
8°
0.010
0°
0.018
8°
Maximum Ratings (Tamb=25℃ unless otherwise specified)
Characteristic
Symbol
VF
Value
0.9
Unit
V
Forward Voltage
@ IF = 10mA
Power Dissipation (Note 1)
Pd
500
mW
℃/W
℃
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
RθJA
Tj, TSTG
305
-55 to +150
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1
REV.02 20120403
BZT52C2V4-BZT52C51
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Maximum
Reverse
Current
Typical
Temperature
Coefficient
@ IZTC
Zener Voltage Range
(Note 2)
Maximum Zener
Test
Impedance (Note 4)
Current
Marking
Type
Code
Number
IZTC
Vz @IZT
IZT ZZT @ IZT ZZK @ IZK IZK
IR
@ VR
(Note 3)
mV/°C
Nom (V) Min (V) Max (V) mA
mA
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
1.0
1.0
1.0
uA
50
V
Min
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-2.7
-2
Max
0
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
5
5
5
W
BZT52C2V4
BZT52C2V7
BZT52C3V0
BZT52C3V3
BZT52C3V6
BZT52C3V9
BZT52C4V3
BZT52C4V7
BZT52C5V1
BZT52C5V6
BZT52C6V2
BZT52C6V8
BZT52C7V5
BZT52C8V2
BZT52C9V1
BZT52C10
BZT52C11
BZT52C12
BZT52C13
BZT52C15
BZT52C16
BZT52C18
BZT52C20
BZT52C22
BZT52C24
BZT52C27
BZT52C30
BZT52C33
BZT52C36
BZT52C39
BZT52C43
BZT52C47
BZT52C51
WX
W1
W2
W3
W4
W5
W6
W7
W8
W9
WA
WB
WC
WD
WE
WF
WG
WH
WI
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
2.2
2.5
2.6
2.9
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
100
100
100
600
600
600
600
600
600
600
500
480
400
150
80
1.0
20
1.0
0
2.8
3.2
10
1.0
0
3.1
3.5
5.0
5.0
3.0
3.0
3.0
2.0
1.0
3.0
2.0
1.0
0.7
0.5
0.2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
1.0
0
3.4
3.8
1.0
0
3.7
4.1
1.0
0
4.0
4.6
1.0
0
4.4
5.0
2.0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
25.3
29.4
33.4
37.4
41.2
12.0
12.0
12.0
4.8
5.4
2.0
5.2
6.0
2.0
5.8
6.6
4.0
0.4
6.4
7.2
4.0
1.2
7.0
7.9
80
5.0
2.5
7.7
8.7
80
5.0
3.2
8.5
9.6
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
700
750
750
6.0
3.8
9.4
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
7.0
4.5
11
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
8.0
5.4
12
8.0
6.0
13
8.0
7.0
WJ
15
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.1
25.2
27.3
32
9.2
WK
WL
WM
WN
WO
WP
WQ
WR
WS
WT
WU
WV
WW
16
10.4
12.4
14.4
16.4
18.4
21.4
24.4
27.4
30.4
33.4
10.0
10.0
10.0
18
20
22
24
27
30
33
36
39
43
47
35
51
38
Notes:
1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2.
2. Tested with pulses, period = 5ms, pulse width = 300ms.
3. When provided, otherwise, parts are provided with date code only, and type number identifications appears on reel only.
4. f = 1KHz.
5. Thermal resistance from junction to ambient and form junction to lead
P.C.B mounted on 0.2x0.2" (5.0x5.0mm) copper pad areas
W
¢J/
£K
JC=100
£K
R
JL= R
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2
REV.02 20120403
Typical Characteristics
0.6
BZT52C2V4-BZT52C51
50
40
T = 25°C
C3V9
j
C2V7
C5V6
C3V3
C6V8
C4V7
0.5
0.4
0.3
0.2
C6V2
C8V2
30
20
Test Current IZ
5.0mA
10
0
0.1
0
0
25
50
75
100
125
150
0
1
2
3
4
5
6
8
9
10
7
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs Ambient Temperature
VZ, ZENER VOLTAGE (V)
Fig. 2 Zener Breakdown Characteristics
30
20
10
0
10
Tj = 25°C
C10
C12
C39
Tj = 25°C
8
6
C15
C18
Test current IZ
2mA
4
C22
Test Current IZ
2mA
C27
Test current IZ
5mA
C33
C36
2
0
0
10
20
30
40
10 20 30 40 50 60 70 80 90 100
VZ, ZENER VOLTAGE (V)
VZ, ZENER VOLTAGE (V)
Fig. 3 Zener Breakdown Characteristics
Fig. 4 Zener Breakdown Characteristics
1000
Tj = 25 °C
f = 1MHz
VR = 1V
VR = 2V
100
VR = 1V
3
VR = 2V
10
1
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
Fig. 5 Total Capacitance vs Nominal Zener Voltage
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REV.02 20120403
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