UF2D [YEASHIN]
SURFACEMOUNT REVERSE VOLTAGE - 50 to 1000 Volts; 表面贴装反向电压 - 50到1000伏特
| 型号： | UF2D |
| 厂家： | 
Yea Shin Technology Co., Ltd |
| 描述： | SURFACEMOUNT REVERSE VOLTAGE - 50 to 1000 Volts |
| 文件： | 总2页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
SEMICONDUCTOR
UF2A~UF2M
SURFACEMOUNT REVERSE VOLTAGE - 50 to 1000 Volts
ULTRA FAST RECTI FIERS FORWARD CURRENT - 2.0 Ampere
FEATURES
• Glass passivated chip
SMB/DO-214AA Unit:inch(mm)
• Ultra fast switching for high efficiency
• For surface mounted applications
• Low forward voltage drop and high current capability
• Low reverse leakage current
.083(2.11)
.075(1.91)
.155(3.94)
.130(3.30)
• Plastic material has UL flammability classification 94V-0
• High temperature soldering : 260OC / 10 seconds at terminals
•
Pb free product at available : 99% Sn above meet RoHS environment
substance directive request
.185(4.70)
.160(4.06)
.012(.305)
.006(.152)
MECHANICAL DATA
• Case : Molded plastic
.096(2.44)
.083(2.13)
• Polarity : Indicated by cathode band
• Weight : 0.003 ounces, 0.093 grams
.012(.31)
.006(.15)
.050(1.27)
.030(0.76)
.008(.203)
.002(.051)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.220(5.59)
.200(5.08)
°C
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
SYMBOL UF2A
UF2B
100
70
UF2D
UF2G
400
UF2J
600
UF2K
800
UF2M
1000
700
UNIT
VRRM
VRMS
VDC
50
35
50
200
140
200
V
V
V
280
420
560
Maximum DC Blocking Voltage
Maximum Average Forward
100
400
600
800
1000
I(AV)
2.0
A
°C
@TL =75
Rectified Current
Peak Forward Surge Current
8.3ms single ha lf sine-wave
IFSM
50
A
super imposed on rated l oad (JEDEC METHOD)
Maximum forward Voltage at 1.0A DC
VF
IR
1.0
1.3
5
1.5
1.7
V
°C
@TJ =25
Maximum DC Reverse Current
at Rated DC Blocking Voltage
uA
ns
pF
@TJ =100
°C
100
Maximum Reverse Recovery Time (Note 1)
Typical Junction
TRR
CJ
50
20
75
10
Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
RθJL
TJ
30
-55 to +150
-55 to +150
TSTG
NOTES : 1.Reverse Recovery Test Conditions :IF=0.5A,IR=1.0A,IRR=0.25A.
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal Resistance junction to Lead.
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1
REV.02 20110725
RATING AND CHARACTERISTIC CURVES
UF2A~UF2M
10
TJ = 25
°C
PULSE WIDTH = 300us
2% DUTY CYCLE
2.4
2.0
1.0
0.1
1.6
1.2
UF2A
SINGLE PHASE HALF
WAVE 60Hz RESISTIVE
OR INDUCTIVE LOAD
P.C.B. MOUNTED ON
0.3×0.3"(8.0×8.0mm)
COPPER PAD AREAS
UF2G
0.8
UF2K
0.4
0
.01
0
20
40
60
80
100 120 140 160
0
.4
.6
8
1.0
1.2
1.4
LEAD TEMPERATURE,
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
Fig. 1-DERATING CURVE FOR OUTPUT RECTIFIED
CURRENT
Fig. 2-TYPICAL FORWARD CHARACTERISTICS
PER ELEMENT
10
30
25
1.0
8.3ms SINGLE HALF SINE WAVE
20
JEDEC METHOD
15
TJ = 25
°C
0.1
.01
10
5
1
2
5
10
20
50
100
0
20
40
60
80 100 120 140
NUMBER OF CYCLES AT 60Hz
PERCENT OF RATED PEAK REVERSE VOLTAGE
Fig. 3-MAXIMUM FORWARD SURGE CURRENT
Fig. 4-TYPICAL REVERSE CHARACTERISTICS
100
trr
+0.5A
0
-0.25
10
5
NOTE:1.Rise Time = 7ns max.
Input Impedance = 1 megohm. 22pF
-1.0
1.0
10
100
1cm
SET TIME
BASE FOR
50 ns/cm
2.Rise Time = 10ns max.
REVERSE VOLTAGE, VOLTS
Source Impedance = 50 Ohms
Fig. 5-TYPICAL JUNCTION CAPACITANCE
PER BRIDGE ELEMENT
Fig. 6-REVERSE RECOVERY TIME CHARACTERISTIC
AND TEST CIRCUIT DIAGRAM
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2
REV.02 20110725
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