6L45-DO [YFW]
Trench MOS Barrier Schottky Rectifier;
| 型号： | 6L45-DO |
| 厂家： | 
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
| 描述： | Trench MOS Barrier Schottky Rectifier |
| 文件： | 总3页 (文件大小：724K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢀꢀꢀꢀꢀꢀ
6L45 DO-201AD
Trench MOS Barrier Schottky Rectifier
Features
• Advanced trench technology
• Low forward voltage drop
• Low power losses
DO-201AD
6L45
• High efficiency operation
• Lead Free Finish, RoHS Compliant
Applications
• DC/DC Converters
• AC/DC Adaptors
Cathode
Anode
Maximum ratings and electrical characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Limit
45
Unit
V
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
Operating junction and storage temperature range
Typical thermal resistance per diode
VRRM
6
A
I
F(AV)
IFSM
150
-40 to +150
20
A
°C
TJ
, TSTG
°C/W
RƟJC
(Mounted on FR-4 PCB)
TYP.
MAX.
0.39
0.30
0.47
0.39
5
I
F
=2A
=2A
TJ=25°C
TJ=125°C
TJ=25°C
TJ=125°C
-
IF
V
F(1)
-
V
Instantaneous forward voltage
0.50
-
IF
=6A
=6A
IF
T
J
=25°C
50
10
uA
Instantaneous reverse current per diode
at rated reverse voltage
Notes:
IR(2)
TJ
=125°C
-
mA
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≦ 40 ms
www.yfwdiode.com
ꢀꢀꢀꢀꢀꢀ
6L45 DO-201AD
RATINGS AND CHARACTERISTICS CURVES
Typical Forward Voltage Characteristics
Typical Reverse Leakage Characteristics
100
10
100
10
1
125℃
100℃
75℃
125℃
1
25
0.1
50℃
0.01
0.001
25℃
0.1
0.1
0.2
0.3
0.4
0.5
0.6
10
20
30
40
Forward Voltage(V)
Reverse Voltage (V)
Typical Junction Capacitance Per Diode
Forward Current Derating Curve
10000
1000
100
6
4
2
0
0.1
1
10
100
0
25
50
75
100
125
150
175
Reverse Voltage (V)
Case Temperature (°C)
www.yfwdiode.com
ꢀꢀꢀꢀꢀꢀ
6L45 DO-201AD
PACKAGE OUTLINE
DO-201AD
A
A
DO-201AD
Dim.
A
Min.
25.4
7.3
Max.
-
B
9.5
1.3
5.3
D
C
C
1.2
B
D
4.8
All Dimensions in mm
www.yfwdiode.com
相关型号：
©2020 ICPDF网 联系我们和版权申明