ES1AF-SMAF [YFW]
Surface Mount Superfast Recovery Rectifier;
| 型号： | ES1AF-SMAF |
| 厂家： | 
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
| 描述： | Surface Mount Superfast Recovery Rectifier |
| 文件： | 总3页 (文件大小：427K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ES1AF THRU ES1JF
Surface Mount Superfast Recovery Rectifier
Reverse Voltage – 50 to 600 V
Forward Current – 1 A
PINNING
PIN
1
DESCRIPTION
Cathode
FEATURES
2
Anode
• For surface mounted applications
• Low profile package
• Glass Passivated Chip Junction
• Superfast reverse recovery time
• Lead free in comply with EU RoHS 2011/65/EU directives
1
2
Top View
Marking Code:
ES1AF~ES1JF: ES1A~ES1J
MECHANICAL DATA
Simplified outline SMAF and symbol
• Case: SMAF
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 27mg / 0.00095oz
Absolute Maximum Ratings and Characteristics
Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbols
VRRM
ES1AF ES1BF ES1CF ES1DF ES1EF ES1GF ES1JF
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Units
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
600
420
600
V
V
V
VRMS
Maximum DC Blocking Voltage
VDC
100
Maximum Average Forward Rectified Current
at Tc = 125 °C
IF(AV)
1
A
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
IFSM
30
A
V
Maximum Forward Voltage at 1 A
VF
1
1.25
1.68
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 °C
Ta =125 °C
5
100
μA
IR
Typical Junction Capacitance
at VR=4V, f=1MHz
Cj
pF
15
（1）
ns
trr
Maximum Reverse Recovery Time
Typical Thermal Resistance（2）
35
80
RθJA
°C/W
Operating and Storage Temperature Range
Tj, Tstg
-55 ~ +150
°C
（1）Measured with IF = 0.5 A, IR = 1 A, Irr = 0.25 A.
（2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
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ES1AF THRU ES1JF
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
50 ohm
Noninductive
10 ohm
Noninductive
trr
+0.5
D.U.T
+
-
PULSE
GENERATOR
Note 2
25Vdc
approx
0
-0.25
1 ohm
NonInductive
OSCILLOSCOPE
Note 1
-1.0
Note：1.Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
10ns/div
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
Set time Base for 10ns/div
Fig.3 Typical Reverse Characteristics
Fig.2 Maximum Average Forward Current Rating
1.2
300
100
1.0
0.8
0.6
0.4
TJ=125°C
TJ=75°C
TJ=25°C
10
1.0
0.1
0.2
Single phase half-wave 60 Hz
resistive or inductive load
0.0
25
50
75
100
125
150
175
0
20
40
60
80
100
Case Temperature (°C)
% of PIV.VOLTS
Fig.4 Typical Forward Characteristics
Fig.5 Typical Junction Capacitance
10
1.0
100
10
1
TJ=25°C
ES1AF~ES1DF
ES1EF/ES1GF
ES1JF
0.1
0.01
0.001
TJ=25°C
f = 1.0MHz
Vsig = 50mVp-p
0.5
1.0
1.5
2.0
2.5
0
0.1
1.0
10
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
Fig.6 Maximum Non-Repetitive Peak
Forward Surage Current
35
30
25
20
15
10
05
00
8.3 ms Single Half Sine Wave
(JEDEC Method)
1
10
100
Number of Cycles
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ES1AF THRU ES1JF
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SMAF
∠ALL ROUND
∠ALL ROUND
M
A
V
HE
E
g
g
A
D
Top View
Bottom View
HE
∠
g
UNIT
mm
A
C
D
E
e
max
min
max
min
1.1
0.9
43
0.20
0.12
7.9
3.7
3.3
2.7
2.4
106
94
1.6
1.3
63
51
1.2
0.8
47
31
4.9
4.4
193
173
7°
146
130
mil
35
4.7
The recommended mounting pad size
Marking
Type number
Marking code
1.6
(63)
1.6
(63)
2.2
(86)
ES1AF
ES1BF
ES1CF
ES1DF
ES1EF
ES1GF
ES1JF
ES1A
ES1B
ES1C
ES1D
ES1E
ES1G
ES1J
mm
(mil)
Unit ：
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