ES3ABF [YFW]

Surface Mount Superfast Recovery Rectifier;
ES3ABF
型号: ES3ABF
厂家: DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD    DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
描述:

Surface Mount Superfast Recovery Rectifier

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ES3ABF THRU ES3JBF  
Surface Mount Superfast Recovery Rectifier  
Reverse Voltage – 50 to 600 V  
Forward Current – 3 A  
PINNING  
PIN  
1
DESCRIPTION  
Cathode  
FEATURES  
2
Anode  
• For surface mounted applications  
• Low profile package  
• Glass Passivated Chip Junction  
• Superfast reverse recovery time  
• Lead free in comply with EU RoHS 2011/65/EU directives  
1
2
Simplified outline SMBF and symbol  
MECHANICAL DATA  
• Case: SMBF  
• Terminals: Solderable per MIL-STD-750, Method 2026  
• Approx. Weight: 57mg / 0.002oz  
Absolute Maximum Ratings and Characteristics  
Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Symbols  
VRRM  
ES3ABF ES3BBF ES3CBF ES3DBF ES3EBF ES3GBF ES3JBF  
Parameter  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS voltage  
Units  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
300  
210  
300  
400  
280  
400  
600  
420  
600  
V
V
V
VRMS  
Maximum DC Blocking Voltage  
VDC  
100  
Maximum Average Forward Rectified Current  
at Tc = 125 °C  
IF(AV)  
3
A
Peak Forward Surge Current 8.3 ms Single Half  
Sine Wave Superimposed on Rated Load  
IFSM  
100  
A
V
Maximum Forward Voltage at 3 A  
VF  
1
1.25  
1.68  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
Ta = 25 °C  
Ta =125 °C  
5
100  
μA  
IR  
Typical Junction Capacitance  
at VR=4V, f=1MHz  
Cj  
trr  
pF  
ns  
35  
35  
1)  
Maximum Reverse Recovery Time  
Typical Thermal Resistance2)  
RθJA  
RθJC  
45  
15  
°C/W  
°C  
Operating and Storage Temperature Range  
Tj, Tstg  
-55 ~ +150  
1Measured with IF = 0.5 A, IR = 1 A, Irr = 0.25 A.  
2P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.  
www.yfwdiode.com  
ES3ABF THRU ES3JBF  
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram  
50 ohm  
Noninductive  
10 ohm  
Noninductive  
trr  
+0.5  
D.U.T  
+
-
PULSE  
GENERATOR  
Note 2  
25Vdc  
approx  
0
-0.25  
1 ohm  
NonInductive  
OSCILLOSCOPE  
Note 1  
-1.0  
Note1.Rise Time = 7ns, max.  
Input Impedance = 1megohm,22pF.  
10ns/div  
2. Ries Time =10ns, max.  
Source Impedance = 50 ohms.  
Set time Base for 10ns/div  
Fig.3 Typical Reverse Characteristics  
Fig.2 Maximum Average Forward Current Rating  
4.0  
3.5  
3.0  
2.5  
300  
100  
TJ=125°C  
10  
2.0  
1.5  
TJ=75°C  
TJ=25°C  
1.0  
0.1  
1.0  
0.5  
0.0  
Single phase half-wave 60 Hz  
resistive or inductive load  
25  
50  
75  
100  
125  
150  
175  
0
20  
40  
60  
80  
100  
Case Temperature (°C)  
% of PIV.VOLTS  
Fig.5 Typical Junction Capacitance  
Fig.4 Typical Forward Characteristics  
10  
1.0  
TJ=25°C  
TJ=25°C  
100  
10  
1
ES3ABF~ES3DBF  
ES3EBF/WS3GBF  
ES3JBF  
0.1  
0.01  
0.001  
TJ=25°C  
f = 1.0MHz  
Vsig = 50mVp-p  
0.5  
1.0  
1.5  
2.0  
2.5  
0
0.1  
1.0  
10  
100  
Instaneous Forward Voltage (V)  
Reverse Voltage (V)  
Fig.6 Maximum Non-Repetitive Peak  
Forward Surage Current  
120  
100  
80  
60  
40  
20  
8.3 ms Single Half Sine Wave  
(JEDEC Method)  
00  
1
10  
100  
Number of Cycles  
www.yfwdiode.com  
ES3ABF THRU ES3JBF  
PACKAGE OUTLINE  
Plastic surface mounted package; 2 leads  
SMBF  
ALL ROUND  
ALL ROUND  
M
A
V
HE  
E
g
g
A
D
Top View  
Bottom View  
g
e
HE  
5.5  
5.1  
UNIT  
mm  
A
C
0.26  
0.18  
10  
D
E
max  
min  
max  
min  
1.3  
1.1  
51  
4.4  
4.2  
3.7  
3.5  
2.2  
1.0  
1.9  
9°  
86  
173  
165  
146  
138  
216  
200  
mil  
40  
43  
7
75  
Marking  
The recommended mounting pad size  
Type number  
Marking code  
1.8(71)  
3.0(118)  
1.8(71)  
ES3ABF  
ES3BBF  
ES3CBF  
ES3DBF  
ES3EBF  
ES3GBF  
ES3JBF  
E3AB  
E3BB  
E3CB  
E3DB  
E3EB  
E3GB  
E3JB  
Unitmm(mil)  
www.yfwdiode.com  

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