MBR845DS [YFW]

Surface Mount Schottky Barrier Rectifier;
MBR845DS
型号: MBR845DS
厂家: DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD    DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
描述:

Surface Mount Schottky Barrier Rectifier

文件: 总3页 (文件大小:477K)
中文:  中文翻译
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MBR840DS THRU MBR8200DS TO-252  
Surface Mount Schottky Barrier Rectifier  
Reverse Voltage - 40 to 200 V  
Forward Current - 8 A  
FEATURES  
High current capability  
Low forward voltage drop  
High surge capability  
High temperature soldering guaranteed  
Mounting position: any  
Lead free in comply with EU RoHS 2011/65/EU directives  
MECHANICAL DATA  
Case: TO-252(D-PAK)  
Terminals: Solderable per MIL-STD-750, Method 2026  
Approx. Weight: 0.32g /0.011oz  
TO-252(D-PAK)  
Maximum Ratings and Electrical characteristics  
Ratings at 25 ° ambient temperature unless otherwise specified.  
Parameter  
Symbols MBR840DS  
MBR845DS  
MBR860DS MBR8100DS MBR8150DS MBR8200DS Units  
Maximum Repetitive Peak Reverse Voltage  
V
RRM  
RMS  
40  
28  
40  
45  
31.5  
45  
60  
42  
60  
100  
70  
150  
105  
150  
200  
140  
200  
V
V
V
A
A
Maximum RMS voltage  
V
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
V
DC  
100  
IF(AV)  
8.0  
Peak Forward Surge Current, 8.3ms Single Half Sine-  
wave Superimposed On Rated Load (JEDEC method)  
IFSM  
150  
V
F
Maximum Instantaneous Forward Voltage at 8 A  
0.65  
0.70  
0.85  
0.90  
0.92  
V
Maximum Instantaneous Reverse Current TA = 25°C  
0.1  
20  
0.05  
20  
IR  
mA  
at Rated DC Reverse Voltage  
TA = 100°C  
Typical Junction Capacitance1)  
C
j
600  
400  
pF  
Typical Thermal Resistance 2)  
Operating Junction Temperature Range  
Storage Temperature Range  
°C/W  
R
θJA  
35  
Tj  
-55 ~ +150  
-55 ~ +150  
-55 ~ +175  
-55 ~ +175  
°C  
°C  
T
stg  
1Measured at 1 MHz and applied reverse voltage of 4 V D.C  
2P.C.B. mounted with 10cm X 10cmX1mm copper pad areas.  
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MBR840DS THRU MBR8200DS TO-252  
Fig.2 Typical Reverse Characteristics  
Fig.1 TYPICAL FORWARD CURRENT DERATING CURVE  
10  
100  
40~100V  
150~200V  
8.0  
10  
TJ=100°C  
6.0  
4.0  
2.0  
1.0  
0.1  
TJ=25°C  
0.01  
0.001  
0.0  
20 40 60 80 100 120 140 160 180  
0
20  
40  
60  
80  
100  
Case Temperature (°C)  
Percent of Rated Peak Reverse Voltage(%)  
Fig.3 Typical Forward Characteristic  
Fig.4 Typical Junction Capacitance  
TJ=25°C  
TJ=25°C  
20  
10  
1000  
500  
100  
1
40~45V  
60V  
100V  
150V  
200V  
40~45V  
60~200V  
20  
10  
0.1  
0
0.5  
1.0  
1.5  
2.0  
0.1  
1
10  
100  
Instaneous Forward Voltage (V)  
Reverse Voltage (V)  
Fig.5 Maximum Non-Repetitive Peak  
Forward Surage Current  
Fig.6- Typical Transient Thermal Impedance  
160  
140  
120  
100  
80  
100  
10  
60  
40  
20  
8.3 ms Single Half Sine Wave  
(JEDEC Method)  
00  
1
0.01  
1
10  
100  
0.1  
1
10  
100  
Number of Cycles at 60Hz  
t, Pulse Durationsec)  
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Dongguan YFW Electronics Co, Ltd.  
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MBR840DS THRU MBR8200DS TO-252  
TO-252(D-PAK)  
Package Outline  
A
B
C
E
L1  
D
M
N
J
+
K
T
S
H
L2  
G
L
L3  
b
G
F
A
B
b
C
D
E
F
G
H
L
L1 L2 L3  
S
M
N
J
K
T
UNIT  
max  
6.7 5.5 0.8 2.5 6.3 0.6 1.8  
0.55 3.1 1.2 1.0 1.75 0.1  
0.45 2.7 0.8 0.6 1.40 0.0  
3.16 1.80 4.83  
ref. ref. ref.  
TYPICAL TYPICAL  
2.29  
1.8  
1.3  
mm  
mil  
TYPICAL  
min 6.3 5.1 0.3 2.1 5.9 0.4 1.3  
max  
264 217 31 98 248 24 71  
min 248 201 12 83 232 16 51  
22 122 47 39 69  
18 106 31 24 55  
4
0
90  
TYPICAL  
71  
51  
124 71 190  
TYPICAL TYPICAL ref. ref. ref.  
Marking on the body  
Summary of Packing Options  
Package  
Packing Description  
Tape/Reel,13”reel  
Packing Quantity  
2500  
Industry Standard  
EIA-481-1  
TO-252(D-PAK)  
www.yfwdiode.com  
Dongguan YFW Electronics Co, Ltd.  
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