U10T08 [YFW]
1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE;
| 型号： | U10T08 |
| 厂家： | 
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
| 描述： | 1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE |
| 文件： | 总3页 (文件大小：413K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
U10T01 THRU U10T10 ABS
1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE
RECTIFIER Reverse Voltage - 100 to 1000 V
Forward Current – 1.0A
FEATURES
Fast reverse recovery time
Designed for Surface Mount Application
Glass Passivated Chip Junction
Low power loss, high efficiency
Lead free in comply with EU RoHS 2011/65/EU directives
1.Input pin(~)
2.Input pin(~)
MECHANICAL DATA
Case: ABS/LBF
Terminals: Solderable per MIL-STD-750, Method 2026
3.Output Anode(+)
4.Output Cathode(-)
Approx. Weight: 88mg / 0.0031oz
ABS/LBF
Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
U10T01
U10T02
U10T04
U10T06
U10T08
U10T10
Parameter
Symbols
VRRM
Units
Maximum Repetitive Peak Reverse Voltage
100
200
400
600
800
1000
V
V
V
Maximum RMS voltage
70
140
200
280
400
420
600
560
800
700
VRMS
Maximum DC Blocking Voltage
100
1000
VDC
Average Rectified Output Current at Tc = 125 °C
1.0
Io
A
A
Peak Forward Surge Current 8.3 ms Single Half
Sine-Wave Superimposed on Rated Load(JEDEC
method)
35
IFSM
Forward Voltage per element at 1.0A
1.0
1.3
1.5
VF
V
5.0
@T
@T
A
=25°C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
IR
μA
A=125°C
100
Typical Junction Capacitance（Note1）
Cj
18
pF
nS
Maximum Reverse Recovery Time （Note2）
50
75
TRR
R
θJA
72
20
Typical Thermal Resistance （Note3）
°C/W
°C
RθJC
Operating and Storage Temperature Range
-55 ~ +150
Tj, Tstg
（1）Measured at 1 MHz and applied reverse voltage of 4 V D.C
（2）Mounted on glass epoxy PC board with 4×1.5"×1.5"（3.81×3.81 cm） copper pad.
www.yfwdiode.com
Dongguan YFW Electronics Co, Ltd.
1 / 3
U10T01 THRU U10T10 ABS
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
50 ohm
Noninductive
10 ohm
Noninductive
trr
+0.5
D.U.T
+
PULSE
GENERATOR
Note 2
25Vdc
approx
0
-
-0.25
1 ohm
NonInductive
OSCILLOSCOPE
Note 1
-1.0
Note：1.Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
10ns/div
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
Set time Base for 10ns/div
Fig.3 Typical Reverse Characteristics
Fig.2 Maximum Average Forward Current Rating
300
100LFM
100
1.0
TJ=125°C
TJ=75°C
10
0.5
1.0
0.1
TJ=25°C
Single phase half wave resistive
or inductive
0.0
25
50
75
100
125
150
175
0
20
40
60
80
100
Case Temperature (°C)
% of PIV.VOLTS
Fig.3 Typical Instaneous Forward
Characteristics
Fig.4 Maximum Non-Repetitive Peak
Forward Surage Current
20
10
40
30
20
10
00
TJ=25°C
pulse with 300μs
1% duty cycle
1.0
0.1
8.3 ms Single Half Sine Wave
(JEDEC Method)
0.01
1
10
100
0.5
1.0
1.5
2.0
2.5
0.0
Instaneous Forward Voltage (V)
Number of Cycles
www.yfwdiode.com
Dongguan YFW Electronics Co, Ltd.
2 / 3
U10T01 THRU U10T10 ABS
ABS/LBF
Package Outline
Plasticsurfacemountedpackage;4leads
∠ALL ROUND
∠ALL ROUND
a
L1
d
L
HE
E
e
a
HE
L1
∠
A
C
D
E
d
L
UNIT
mm
max
1.5
1.3
59
51
0.22
0.15
8.7
5.2
4.9
205
193
4.5
4.2
177
166
6.4
6.0
4.2
3.8
0.7
0.5
28
20
0.6
0.2
0.95
min
7°
max
252
236
165
150
24
8
mil
37
min
5.9
The recommended mounting pad size
6.2
244
4.0
157
1.0
39
2.0
79
mm
：
(mil)
Unit
Summary of Packing Options
Package
ABS/LBF
Packing Description
Tape/Reel,13”reel
Packing Quantity
5000
Industry Standard
EIA-481-1
www.yfwdiode.com
Dongguan YFW Electronics Co, Ltd.
3 / 3
相关型号：
©2020 ICPDF网 联系我们和版权申明