SP5611KG/MPAD [ZARLINK]

PLL/Frequency Synthesis Circuit, PDSO16;
SP5611KG/MPAD
型号: SP5611KG/MPAD
厂家: ZARLINK SEMICONDUCTOR INC    ZARLINK SEMICONDUCTOR INC
描述:

PLL/Frequency Synthesis Circuit, PDSO16

光电二极管
文件: 总11页 (文件大小:395K)
中文:  中文翻译
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SP5611  
1·3GHz Bidirectional I2C Bus Controlled Synthesiser  
Advance Information  
DS3758  
ISSUE 5.0  
June 1998  
The SP5611 is a single chip frequency synthesiser de-  
signed for TV tuning systems. Control data is entered in the  
standardI2CBUSformat. Thedevicecontains4addressable  
bidirectional open collector ports, one of which is a 3-bit  
ADC. The information on these ports can be read via the I2C  
BUS. the device has 4 programmable addresses, pro-  
grammed by applying a specific input voltage to the P3  
address select input. This enables two or more synthesisers  
to be used in a system.  
Ordering Information  
SP5611 KG/MPAS (Tubes)  
SP5611S KG/MPAD(Tape and reel)  
FEATURES  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
CHARGE PUMP  
DRIVE OUTPUT  
I Complete 1·3GHz Single Chip System  
I High Sensitivity RF Inputs  
I Programmable via I2C BUS  
I Low Power Consumption (5V, 20mA)  
CRYSTAL Q1  
CRYSTAL Q2  
SDA  
V
EE  
RF INPUT  
RF INPUT  
SP5611  
SCL  
V
CC  
NC  
P3 ADD SELECT PORT  
I/O PORT P4  
*
I/O PORT P7  
I/O PORT P6  
I/O PORT P5  
I
Low Radiation  
I Phase Lock Detector  
MP16  
I Varactor Drive Amp Disable  
† = Logic level I/O port  
* = 3-bit ADC input  
I 4 Bi-directional Controllable Outputs  
I 5-Level ADC  
I Variable I2C BUS Address for Multi-tuner Applications  
I ESD Protection: 4kV, Mil-Std-883C, Method 3015 (1)  
I Switchable 4512/1024 Reference Divider  
I Pin and Function Compatible with SP5511S (2)  
Fig. 1 Pin connections – top view  
APPLICATIONS  
I Satellite TV  
I Cable Tuning Systems  
I VCRs  
(1) Normal ESD handling precautions should be observed.  
(2) The SP5511S does not have a switchable reference  
division ratio.  
THERMAL DATA  
uJC = 41°C/W  
uJA = 111°C/W  
SP5611 Advance Information  
ELECTRICAL CHARACTERISTICS  
TAMB = 240°C to 185°C, VCC = 14·5V to 15·5V, reference frequency = 4MHz.  
These Characteristics are guaranteed by either production test or design. They apply within the specified ambient temperature  
and supply voltage ranges unless otherwise stated.  
Value  
Characteristic  
Pin  
Units  
Conditions  
Min.  
Typ.  
Max.  
Supply current  
12  
20  
27  
mA  
VCC = 4·5V to 5·5V (note 1)  
Prescaler input voltage  
13,14  
12·5  
300 mVrms 50MHz to 1·3GHz sinewave,  
see Fig. 5  
Prescaler input impedance  
Prescaler input capacitance  
13,14  
13, 14  
50  
2
pF  
SDA, SCL  
Input high voltage  
Input low voltage  
Input high current  
Input low current  
Leakage current  
4,5  
4,5  
4,5  
4,5  
4,5  
3
0
5·5  
1·5  
10  
210  
10  
V
V
µA  
µA  
µA  
Input voltage = VCC  
Input voltage = 0V  
When VCC = 0V  
SDA  
Output voltage  
4
0·4  
V
Sink current = 3mA  
Charge pump current low  
Charge pump current high  
1
1
1
650  
6170  
µA  
µA  
nA  
µA  
Byte 4, bit 2 = 0, pin 1 = 2V  
Byte 4, bit 2 = 1, pin 1 = 2V  
Byte 4, bit 4 = 1, pin 1 = 2V  
V pin 16 = 0·7V  
Charge pump output leakage current  
Charge pump drive output current  
Charge pump amplifier gain  
Recommended crystal series resistance  
Crystal oscillator drive level  
Crystal oscillator negative resistance  
External reference input frequency  
External reference input amplitude  
6 5  
200  
8
16  
500  
10  
6400  
mV p-p  
Parallel resonant crystal (note 2)  
2
2
2
2
80  
1000  
750  
2
70  
MHz AC coupled sinewave  
200 mVrms AC coupled sinewave  
Output Ports  
P4-P7 sink current  
P4-P7 leakage current  
9-6  
9-6  
10  
mA  
µA  
V
OUT = 0·7V  
10  
VOUT = 13·2V  
Input Ports  
P3 input current high  
P3 input current low  
P4, P5, P7 input voltage low  
P4, P5, P7 input voltage high  
P6 input current high  
P6 input current low  
10  
10  
9,8,6  
9,8,6  
7
1
20·5  
0·8  
mA  
mA  
V
V
µA  
µA  
V pin 10 = VCC  
V pin 10 = 0V  
2·7  
110  
210  
See Table 3 for ADC levels  
7
NOTES  
1. Maximum power consumption is 150mW with VCC = 5·5V and all ports off.  
2. Resistance specified is maximum under all conditions.  
2
Advance Information SP5611  
ABSOLUTE MAXIMUM RATINGS  
All voltages are referred to VEE and pin 3 at 0V  
Value  
Parameter  
Pin  
Units  
Conditions  
Min.  
Max.  
Supply voltage  
RF input voltage  
Port voltage  
12  
13,14  
6-9  
6-9  
6-9  
10  
20·3  
7
V
V p-p  
V
2·5  
20·3  
20·3  
14  
Port in off state  
6
V
Port in on state  
Total port output current  
Address select voltage  
RF input DC offset  
50  
mA  
V
20·3  
20·3  
20·3  
20·3  
20·3  
20·3  
20·3  
255  
V
V
V
V
V
V
CC10·3  
CC10·3  
CC10·3  
CC10·3  
CC10·3  
CC10·3  
6
13-14  
1
V
Charge pump DC offset  
Drive output DC offset  
Crystal oscillator DC offset  
SDA, SCL input voltage  
V
16  
V
2
V
4,5  
V
V
Storage temperature  
Junction temperature  
1150  
1150  
°C  
°C  
PREAMP  
13  
OSC  
2
F
F
Q1  
Q2  
PD  
COMP  
15-BIT  
PHASE  
DIVIDER  
4512/1024  
PRESCALER  
PROGRAMMABLE  
RF IN  
COMP  
CRYSTAL  
14  
48  
3
1
DIVIDER  
F
LOCK  
DET  
CHARGE PUMP  
15-BIT LATCH  
DIVIDE RATIO  
POWER  
ON DET  
DN  
UP  
16  
CHARGE  
PUMP  
DRIVE/  
VARICAP OUT  
POR  
F
L
5
4
SCL  
SDA  
2
I
C BUS  
CONTROL DATA  
LATCHES  
TRANSCEIVER  
CP  
TO  
OS  
AND  
CONTROL LOGIC  
4
LEVEL  
3 TTL  
COMP  
4-BIT LATCH  
PORT INFO  
ADDRESS  
SELECT  
3-BIT  
ADC  
4
PORT OUTPUT  
DRIVERS  
V
V
CC  
15  
EE  
10  
9
8
7
6
P3 ADD SELECT  
P4  
P5  
P6  
P7  
Fig. 2 Block diagram  
3
SP5611 Advance Information  
FUNCTIONAL DESCRIPTION  
The SP5611 is programmed from an I2C Bus. Data and  
Clock are fed in on the SDA and SCL lines respectively, as  
defined by the I2C Bus format. The synthesiser can either  
accept new data (write mode) or send data (read mode). The  
LSB of the address byte (R/W) sets the device into write  
mode if it is low and read mode if it is high. The Tables in Fig.  
3 illustrate the format of the data. The device can be pro-  
grammed to respond to several addresses, which enables  
the use of more than one synthesiser in an I2C Bus sys-  
tem. Table 4 shows how the address is selected by applying  
a voltage to P3.  
from 512 to 1024, and is controlled by bit 7 of byte 4 (TS0);  
a logic 1 to 512, a logic 0 for 1024. The SP5611 differs from  
the SP5511 in this respect, only 512 being available on the  
SP5511. Note that the comparison frequency is 7·8125kHz  
when a 4MHz reference is used, and divide by 512 is  
selected.  
Bit 2 of byte 4 of the programming data (CP) controls the  
current in the charge pump circuit, a logic 1 for 170µA and  
a logic 0 for 50µA, allowing compensation for the variable  
tuning slope of the tuner and also to enable fast channel  
changes over the full band. When the device is frequency  
locked, the charge pump current is internally set to 50µA  
regardless of CP.  
When the device receives a correct address byte, it pulls  
the SDA line low during the acknowledge period, and during  
following acknowledge periods after further data bytes are  
programmed. When the device is programmed into the read  
mode, the controller accepting the data must pull the SDA  
line low during all status byte acknowledge periods to read  
another status byte. If the controller fails to pull the SDA line  
lowduringthisperiod, thedevicegeneratesaninternalSTOP  
condition, which inhibits further reading.  
Bit 4 of byte 4 (T0) disables the charge pump when it is set  
to a logic 1.  
Bit 8 of byte 4 (OS) switches the charge pump drive  
amplifier’s output off when it is set to a logic 1.  
Bit 3 of byte 4 (T1) enables various test modes when set  
high. These modes are selected by bits 5, 6 and 7 of byte 4  
(TS2, and TS1, TS0) as detailed in Table 5. When T1 is set  
low, TS2 and TS1 are assigned a ‘don’t care’ condition, and  
TS0 selects the reference divider ratio as previously de-  
scribed.  
WRITE Mode (Frequency Synthesis)  
When the device is in write mode bytes 2 and 3 select the  
synthesised frequency, while bytes 4 and 5 control the output  
port states, charge pump, reference divider ratio and various  
test modes.  
Byte 5 programs the output ports P4 to P7; a logic 0 for a  
high impedance output and a logic 1 for low impedance (on).  
READ Mode  
Once the correct address is received and acknowledged,  
the first bit of the next byte determines whether that byte is  
interpreted as byte 2 or 4; a logic 0 for frequency information  
and a logic 1 for control and output port information. When  
byte 2 is received the device always expects byte 3 next.  
Similarly, when byte 4 is received the device expects byte 5  
next. Additional data bytes can be entered without the need  
to re-address the device until an I2C stop condition is  
recognised. This allows a smooth frequency sweep for fine  
tuning or AFC purposes.  
When the device is in read mode the status byte read from  
the device on the SDA line takes the form shown in Table 2.  
Bit 1 (POR) is the power-on reset indicator and is set to  
a logic 1 if the VCC supply to the device has dropped below 3V  
(at 25˚C), for example, when the device is initially turned on.  
The POR is reset to 0 when the read sequence is terminated  
by a stop command. When POR is set high (at low VCC), the  
programmed information is lost and the output ports are all  
set to high impedance.  
Bit 2 (FL) indicates whether the device is phase locked, a  
logic 1 is present if the device is locked, and a logic 0 if the  
device is unlocked.  
If the transmission of data is stopped mid-byte (for exam-  
ple, by another device on the bus) then the previously pro-  
grammed byte is maintained.  
Bits 3, 4 and 5 (I2, I1, I0) show the status of the I/O Ports  
P7, P5andP4respectively. Alogic0indicatesalowleveland  
a logic 1 a high level. If the ports are to be used as inputs they  
should be programmed to a high impedance state (logic 1).  
These inputs will then respond to data complying with TTL  
type voltage levels.  
Frequency data from bytes 2 and 3 are stored in a 15-bit  
register and used to control the division ratio of the 15-bit  
programmable divider. This is preceded by a divide-by-8  
prescaler and amplifier to give excellent sensitivity at the local  
oscillator input, see Fig. 5. The input impedance is shown in  
Fig. 7.  
Bits 6, 7 and 8 (A2, A1, A0) combine to give the output of  
the 5-level ADC. The ADC can be used to feed AFC informa-  
tion to the microprocessor from the IF section of the receiver,  
as illustrated in the typical application circuit.  
The programmed frequency can be calculated by multiply-  
ing the programmed division ratio by 8 times the comparison  
frequency FCOMP. When frequency data is entered, the phase  
comparator, via a charge pump and varicap drive amplifier,  
adjusts the local oscillator control voltage until the output of  
the programmable divider is frequency and phased locked to  
the comparison frequency.  
The reference frequency may be generated by an external  
source capacitively coupled into pin 2, or provided by an on-  
chip crystal controlled oscillator. The comparison frequency  
APPLICATION  
A typical application is shown in Fig. 4. All input/output  
interfacecircuitsareshowninFig.6.TheSP5611isfunctionand  
pin equivalent to the SP5511 device apart from the switchable  
reference divider, and has much lower power dissipation,  
improved RF sensitivity and better ESD performance.  
F
COMP is derived from the reference frequency via the refer-  
ence divider. The reference divider division ratio is switchable  
4
Advance Information SP5611  
MSB  
LSB  
Address  
1
0
27  
1
0
0
0
MA1 MA0  
0
A
A
A
A
A
Byte 1  
Byte 2  
Byte 3  
Byte 4  
Byte 5  
214 213 212 211 210  
26 25 24 23 22  
29  
21  
28  
20  
Programmable divider  
Programmable divider  
Charge pump and test bits  
I/O port control bits  
1
CP T1 T0 TS2 TS1 TS0 OS  
P7 P6 P5 P4  
X
X
X
X
Table 1 Write data format (MSB transmitted first)  
Address  
1
1
0
0
0
MA1 MA0  
1
A
A
Byte 1  
Byte 2  
Status byte  
POR FL  
I2  
I1  
I0  
A2 A1 A0  
Table 2 Read data format  
A2 A1 A0  
Voltage input to P6  
1
0
0
0
0
0
1
1
0
0
0
1
0
1
0
0·6VCC to 13·2V  
0·45VCC to 0·6VCC  
0·3VCC to 0·45VCC  
0·15VCC to 0·3VCC  
0V to 0·15VCC  
MA1 MA0 Address select input voltage  
0
0
1
1
0
1
0
1
0V to 0·1VCC  
Open circuit  
0·4VCC to 0·6VCC  
0·9VCC to VCC  
Table 3 ADC levels  
Table 4 Address selection  
T1 TS2 TS1 TS0  
Operation mode description  
Normal operation, test modes disabled, reference divider ratio = 1024  
Normal operation, test modes disabled, reference divider ratio = 512  
Charge pump source (down). Status bit FL set to 0  
Charge pump sink (up). Status bit FL set to 1  
0
0
1
1
1
1
1
X
X
0
0
1
1
1
X
X
0
1
0
0
1
0
1
X
X
0
1
X
Ports P4, P5, P6, P7set to state X  
Port P7 = FPD/2; P4, P5, P6 set to state X  
Port P7 = FPD; P6 = FCOMP; P4, P5 set to state X  
Table 5 Operation modes  
NOTES  
X = don’t care  
For further details of test modes, see Table 6  
A
:
:
:
:
:
:
:
:
:
:
:
:
:
Acknowledge bit  
MA1, MA0  
CP  
T1  
T0  
TS2, TS1, TS0  
OS  
P7, P6, P5, P4,  
POR  
Variable address bits (see Table 4)  
Charge Pump current select  
Test mode selection  
Charge pump disable  
Operation mode control bits (see Table 5)  
Varactor drive Output disable Switch  
Control output port states  
Power On Reset indicator  
Phase lock detect flag  
Digital information from ports P7, P5 and P4 respectively  
5-level ADC data from P6 (see Table 3)  
Don’t care  
FL  
I2, I1, I0  
A2, A1, A0  
X
Fig. 3 Data formats  
5
SP5611 Advance Information  
112V  
112V  
IF SECTION  
AFC OUT  
IF SIGNAL  
P7  
P5  
P4  
BAND  
INPUTS  
9
8
7
6
5
4
3
2
1
P6  
P3  
10  
11  
12  
13  
14  
15  
16  
15V  
TUNER  
15V  
SCL  
1n  
CONTROL  
MICRO  
SP5611  
0·1µ  
2
I
C BUS SDA  
OSCILLATOR  
OUTPUT  
4MHz  
CRYSTAL  
1n  
130V  
18p  
39n  
22k  
22k  
180n  
V
T
47k  
10k  
VARICAP  
INPUT  
10n  
BCW31  
Fig. 4 Typical application  
300  
37·5  
25  
OPERATING  
WINDOW  
12·5  
50  
500  
1000  
FREQUENCY (MHz)  
1300  
1500  
Fig. 5 Typical input sensitivity  
6
Advance Information SP5611  
V
CC  
V
REF  
CHARGE  
PUMP  
3k  
3k  
RF INPUTS  
150  
DRIVE  
OUTPUT  
OS  
(O/P DISABLE)  
Loop amplifier  
RF input  
V
CC  
V
CC  
67k  
3k  
SCL/SDA  
CRYSTAL Q1  
CRYSTAL Q2  
ACK  
*
*
ON SDA ONLY  
SCL and SDA inputs  
Reference oscillator  
V
CC  
V
CC  
30k  
3k  
3k  
PORT  
P3  
10k  
P3 address select  
Ports P7-P4  
Fig. 6 SP5611 input/output interface circuits  
7
SP5611 Advance Information  
j1  
j0.5  
j2  
j0.2  
j5  
0.5  
5
0.2  
1
2
0
1·25GHz  
2j5  
2j0.2  
2j2  
S11:ZO = 50  
NORMALISED TO 50Ω  
2j0.5  
FREQUENCY MARKER STEP = 250MHz  
2j1  
Fig. 7 Typical input impedance,  
APPLICATION NOTES  
An application note, AN168, is available for designing with  
synthesisers such as the SP5611. It covers aspects such as  
loop filter design, decoupling and I2C bus radiation problems.  
The application note is published in the Zarlink Semiconduc-  
torMediaICHandbook.Agenerictest/demonstrationboardhas  
been produced, which can be used for the SP5611. A circuit  
diagram and layout for the board are shown in Figs. 8 and 9.  
The board can be used for the following purposes:  
(A) Measuring RF sensitivity perfomance  
(B) Indicating port function  
(C) Synthesising a voltage controlled oscillator  
(D)Testing external reference sources  
The programming codes relevant to these tests are given in  
Table 6.  
EXTERNAL  
REFERENCE  
15V  
130V  
112V  
P2  
SK2  
15V  
C7  
C8  
100n  
C9  
100n  
100n  
C3 47n  
R7 22k  
R11 3k  
S1  
C6 10n  
(NOT FITTED,  
SEE NOTE)  
C2  
220n  
R8 22k  
S2  
P3  
R9 10k  
R10 47k  
VAR  
GND  
X1  
4MHz  
C1  
18p  
R12 1k  
C14 10n  
C5 1n  
TR1  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
2N3904  
SK1  
TP1  
RFINPUT  
C4 1n  
112V  
DATA/SDA  
R14 22k  
15V  
SP5611  
C12 100p  
12  
11  
10  
9
R13 12k  
C10 1n  
TR2  
2N3906  
CLOCK/SCL  
C13 100p  
ENABLE/ADDRESS SEL  
P1  
P4  
NOTE  
To use an external reference,  
capacitor C6 must be fitted  
and capacitor C1 removed  
from the board.  
112V  
D1  
D2  
D3  
D4  
D5  
D6  
6
7
8
9
10  
11  
PIN NO.  
C11  
1n  
Fig. 8 Test board circuit  
8
Advance Information SP5611  
TP1 = PIN 3 DC BIAS  
Top view (ground plane)  
Underside (surface mounted components side)  
NOTES  
1. CIRCUIT SCHEMATIC IS SHOWN IN FIG. 8  
2. ALL SUFACE MOUNT COMPONENTS ARE  
MOUNTED ON UNDERSIDE OF BOARD  
Fig. 9 Test board layout  
9
SP5611 Advance Information  
TEST MODES  
As explained in the functional description, The SP5611 can  
be programmed into a numb er of test modes. These are  
invoked by programming Hex codes into byte 4, those most  
commonly used being shown in Table 6.  
NOTE:  
WhenlookingatFPD orFCOMP signalsfromportsP7andP6.byte  
should be sent twice, first to set the desired reference division  
ratio then to switch on the chosen test mode.  
Other codes will also apply due to don’t care conditions,  
which are assumed to be 1 in the Table.  
The pulses can then be measured by simply connecting an  
oscilloscopeorcountertotherelevantoutputpinonthetestboard.  
Hex code (byte 4)  
Operation mode description  
CP high mode  
CP low mode  
8C  
8E  
A2  
A6  
AA  
AE  
9E  
8F  
9F  
Normal operation, reference divider ratio = 1024  
Normal operation, reference divider ratio = 512  
Charge pump source (down), FL set to 0  
Charge pump sink (up), FL set to 1  
CC  
CE  
E2  
E6  
EA  
EE  
DE  
CF  
DF  
Port P7 = FPD/2  
Port P7 = FPD, P6 = FCOMP  
Charge pump disable, reference divider ratio = 512  
Varactor line disable, reference divider ratio = 512  
Charge pump and varactor linedisable, reference divider ratio = 512  
Table 5 Operation modes  
10  
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TECHNICAL DOCUMENTATION - NOT FOR RESALE  

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MICROSEMI

SP5611KG/MPAS

PLL Frequency Synthesizer, PDSO16, 0.150 INCH, MS-012-AC, SOIC-16
ZARLINK

SP5611KGMPAS

1·3GHz Bidirectional I2C Bus Controlled Synthesiser
MITEL

SP5611S/KG/MPAD

PLL Frequency Synthesizer, BIPolar, PDSO16
DYNEX

SP5611S/KG/MPAS

PLL Frequency Synthesizer, BIPolar, PDSO16
DYNEX

SP5611SKG

1·3GHz Bidirectional I2C Bus Controlled Synthesiser
MITEL

SP5611SKG/MPAD

PLL/Frequency Synthesis Circuit, PDSO16
MICROSEMI

SP5611SKGMPAD

1·3GHz Bidirectional I2C Bus Controlled Synthesiser
MITEL

SP5612

Trans Voltage Suppressor Diode, 1500W, 49.3V V(RWM), Unidirectional, 1 Element, Silicon, HERMETICALLY SEALED, GLASS PACKAGE-2
MICROSEMI

SP5612E3

Trans Voltage Suppressor Diode, 1500W, 49.3V V(RWM), Unidirectional, 1 Element, Silicon, HERMETICALLY SEALED, GLASS PACKAGE-2
MICROSEMI

SP5613

Trans Voltage Suppressor Diode, 1500W, 175V V(RWM), Unidirectional, 1 Element, Silicon, HERMETICALLY SEALED, GLASS PACKAGE-2
MICROSEMI

SP5613E3

Trans Voltage Suppressor Diode, 1500W, 175V V(RWM), Unidirectional, 1 Element, Silicon, HERMETICALLY SEALED, GLASS PACKAGE-2
MICROSEMI