概述
数据手册ZL70008 概述
Medical Surge Protection Devices 医疗浪涌保护器件
ZL70008 数据手册
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PDF下载ZL70002/08/09/10
Medical Surge Protection Devices
Data Sheet
July 2003
Features
•
•
•
•
•
Extremely fast turn-on
Ordering Information
Very small size and very low leakage
5, 6 and 7 terminals available
ZL70002/UDJ Bumped Die, Waffle Tray
ZL70008/UDJ Bumped Die, Waffle Tray
ZL70009/UDJ Bumped Die, Waffle Tray
ZL70010/UDJ Bumped Die, Waffle Tray
0 to +55°C
Standard delivery form: solder bumped die
Facilitates compliance with EN-45502 and EN-
50061
Description
Superior Quality
The ZL70002/08/09/10 family are high performance
surge protection devices targeted for medical
applications.
•
QA procedures based on MIL-PRF-38535
•
Traceability for every chip to lot and wafer
number
•
100% burn-in capability
Applications
•
Pacemakers, Implantable Cardioverter
Defibrillators (ICDs), Neurostimulators, Bladder
Control Devices
•
Medical devices with electronics requiring
protection against a high voltage surge
Rb
Rb
Rb
Rb
Rb
Rb
T4
T3
T1
T2
T5
T6
Figure 1 - ZL70010 Block Diagram
1
Zarlink Semiconductor Inc.
ZL70002/08/09/10
Data Sheet
Rb
Rb
Rb
Rb
Rb
Rb
Rb
T4
T7
T3
T1
T2
T5
T6
Figure 2 - ZL70002 Block Diagram
Pin Description Table - ZL70010 and ZL70002
Pin # In/Output
Name
Description
Transient Surge Protection Terminal 1
1
2
3
4
5
6
7
I
I
I
I
I
I
I
T1
T2
T3
T4
T5
T6
T7
Transient Surge Protection Terminal 2
Transient Surge Protection Terminal 3
Transient Surge Protection Terminal 4
Transient Surge Protection Terminal 5
Transient Surge Protection Terminal 6
Transient Surge Protection Terminal 7 (ZL70002 only)
ZL70010
ZL70002
T1
T2
T3
T4
T5
T6
T1
T2
T3
T4
T5
T6
T7
Figure 3 - ZL70010 and ZL70002 Bumped Chip Appearance
2
Zarlink Semiconductor Inc.
Data Sheet
ZL70002/08/09/10
Rb
Rb
Rb
Rb
Rb
T1
T2
SUB1
T3
SUB2
T5
T4
Figure 4 - ZL0008/ZL0009 Block Diagram
Pin Description Table - ZL0008 and ZL0009
Pin # In/Output
Name
Description
Transient Surge Protection Terminal 1
1
2
3
4
5
6
7
I
T1
T2
I
Transient Surge Protection Terminal 2
I/O
SUB1
T3
Transient Surge Protection Substrate Connection 1
Transient Surge Protection Terminal 3 Doubled Area
Transient Surge Protection Substrate Connection 2
Transient Surge Protection Terminal 4
I
I/O
I
SUB2
T4
I
T5
Transient Surge Protection Terminal 5
ZL70008
ZL70009
T1
T2
SUB1 T3
SUB2
T4
T5
T1 T2
SUB1
T3
SUB2
T4
T5
Figure 5 - ZL70008 and ZL70009 Bumped Chip Appearance
3
Zarlink Semiconductor Inc.
ZL70002/08/09/10
Data Sheet
1.0
Functional Description
The ZL70002/08/09/10 is a family of transient surge suppressing devices designed specifically for implanted medical
devices. The device terminals have an extremely low leakage during normal voltages and can therefore be
connected in parallel with the pins of the device it protects. When the voltage rises to dangerous level it then rapidly
turns on and limits the voltage by shunting the current through its thyristors. This makes the ZL70002/08/09/10
family an effective means of compliance with international regulations EN-45502, “Active implantable” and the EN-
50061 “Safety of Implantable Cardiac Pacemakers”.
1.1
ZL70010
ZL70010 is a six-branch device.The suppression is achieved by a self-triggering thyristor-diode device in parallel
with a diode between each branch-input and a common node which also is the substrate of the device. The six
branches of the device are reached through terminals T1, T2, T3, T4, T5 and T6. The electrical characteristic
observed between any two of the terminals (T1, T2, T3, T4, T5 and T6) very much resembles that of a DIAC, see
Figure 12.
When a transient current is forced between two branch-input terminals, the positive terminal will be clamped to the
common node by the diode of one branch and the negative terminal to the forward voltage of the thyristor-diode of
the other branch. Due to the low on-state voltage of the thyristor that voltage will stay at a safe value during the
transient.
1.2
ZL70002 is a seven-branch device with exactly the same electrical characteristics as ZL70010.
1.3 ZL70008 and ZL70009
ZL70002
ZL70008 and ZL70009 are five-branch transient surge suppressing with the same functionality as ZL70010. The
only functional difference is that the substrate of the device is accessible through the two terminals SUB1 and SUB2.
4
Zarlink Semiconductor Inc.
Data Sheet
ZL70002/08/09/10
2.0
Application
According to the EN-45502 standard, all active medical devices intended for implantation in a human torso should
not be permanently affected by an external defibrillation of the patient. Compliance is confirmed if the implanted
device continues to meet device specification after being subjected to a sequence of 140 Volt pulses in series with
a 300 Ohm resistor between each conductive part of the device including the device case (see EN-45502 for
details). Using the ZL70002/08/09/10 protects the implantable device and is an effective means of compliance with
the EN-45502 standard where the electronics, in almost all cases, would be destroyed if not protected. The same
compliance tests are also described in EN-50061.
In the application example shown in Figure 6, each of the dual chamber pacemaker's terminals and case are
connected to a terminal on the protection device. If a defibrillation pulse causes the ventricular tip to begin to go
positive, relative to the case, the ZL70008/9 thyristor structure rapidly becomes active and forms a low impedance
path between T2 and T3 to absorb the current and limit the voltage. This provides an effective means of protection
to the pacemaker chip. In actuality, the voltages and currents the implanted device is subjected to in an actual
defibrillation can be higher than described in EN-45502/EN-50061 and has been taken into account when designing
the ZL70002/08/09/10 family.
Surge Protection Device
Typical Dual Chamber Pacemaker
ZL70008/09
T2
T3
T5
T4
T1
Digital
chip
Analog chip
Atrial tip lead
Atrial ring lead
Case
Charge
Pump
Stimulation
and
Sensing
block
Ventricular tip lead
Ventricular ring lead
Voltage
and
Current
Reference
Figure 6 - Pacemaker Application Example
Terminals placed most remotely to others should get special attention since they effectively form a large pick-up
coil and could therefore be exposed to a large amount of current. When implanted, the pacemaker case is placed
beneath the collarbone and all other terminals are placed together inside the heart. For this reason, the largest
current will pass through the surge protection terminal connected to the case of the pacemaker. For ZL70008/9, we
recommend that the case be connected to T3 of the protection device which is designed to be able to withstand the
largest amount of current. If device ZL700010 is used in a 5 terminal application, we recommend that 2 pins of the
protection device be connected to the implantable device terminal with the largest current flow (typically the terminal
for the device case).
5
Zarlink Semiconductor Inc.
ZL70002/08/09/10
Data Sheet
2.1
Mechanical Data - ZL70010
185 + 5 um
650 + 5 um
300 + 25 um
4064 + 20 um
Figure 7 - Size and Bump Placement of ZL70010
Mechanical Data - ZL70002
2.2
185 + 5 um
650 + 5 um
300 + 25 um
4700 + 20 um
Figure 8 - Size and Bump Placement of ZL70002
6
Zarlink Semiconductor Inc.
Data Sheet
ZL70002/08/09/10
2.3
Mechanical Data - ZL70008 and ZL70009
Note that the bump pattern for ZL70008 and ZL70009 differ slightly as shown in Figure 5. Figure 9 depicts ZL70008.
186 + 5 um
342 + 5 um
559 + 5 um
516 + 5 um
372 + 35 um
4454 + 20 um
Figure 9 - Size and Bump Placement of ZL70008 and ZL70009
Sn/Pb 63/37
o 125 + 22 um
AL
Barrier layers
Si3N4
o 66 um
o 92 um
Figure 10 - Bump Appearance of ZL70002/08/09/10
7
Zarlink Semiconductor Inc.
ZL70002/08/09/10
Absolute Maximum Ratings*
Parameter
Data Sheet
Sym
Min
Max
125
125
Units
°C
Test Conditions
1
2
Storage Temperature range
T
S
-40
Maximum junction
temperature
T
°C
j
3
Maximum surge current
ITSM
8
A
Test according to Figure 11.
tp for flip mounted chips with underfill:
10 ms
4
Continuous power dissipation
Pmax
300
mW
t>1 s
*Exceeding these values may cause permanent damage. Functional operations under these conditions is not implemented
Recommended Operating Conditions
1
Parameter
Sym
Min
Typ
Max
Units
Test Conditions
5
Operating temperature
range
T
0
37
55
°C
OP
1) Typical figures are at 37 degrees C and are for design only.
1
DC Electrical Characteristics
2
Parameter
Sym
Min
Typ
Max
Units
Test Conditions
6
Forward breakdown
voltage, Zener diode,
terminal to terminal
ZL70002/10
ZL70008
Vfz
Vfz
Vfz
9.0
9.5
9.0
10.1
10.5
9.5
11.0
13.5
12.2
V
V
V
Iz=10µA
Iz=10µA
Iz=10µA
ZL70009
7
8
Forward breakdown
voltage, Zener diode,
terminal to substrate
ZL70008
ZL70009
Vfz
Vfz
9.0
8.5
10.2
9.2
12.8
11.5
V
V
Iz=10µA
Iz=10µA
Breakover voltage,
terminal to terminal
ZL70002/10
ZL70008
Vbo
Vbo
Vbo
9.0
9.5
9.0
11.2
11.6
10.5
12.2
13.5
12.2
V
V
V
Figure 12
Figure 12
Figure 12
ZL70009
9
Breakover voltage,
terminal to substrate
ZL70008
ZL70009
Vbo
Vbo
9.0
8.5
11.0
9.8
12.8
11.5
V
V
Figure 12
Figure 12
8
Zarlink Semiconductor Inc.
Data Sheet
ZL70002/08/09/10
2
Parameter
Sym
Min
Typ
Max
Units
Test Conditions
10
11
Forward diode voltage
drop, substrate to
terminal
ZL70008/09
Vfwd
2
V
Measured @2A
Breakover current
ZL70002/10
Ibo
Ibo
Ibo
15
28
15
60
60
40
mA
mA
mA
Figure 12
Figure 12
Figure 12
ZL70008
ZL70009
12
Holding current
ZL70002/08/09/10
Ih
1
mA
Measured after a current pulse
of Ip=0.2A for tp=1ms,
RG<200 Ω
Figure 13.
13
14
15
16
On-state voltage
terminal to terminal
ZL70002/08/09/10
Von
Ron
Von
Id
2.2
0.4
1.0
10
3.0
1
V
Ω
Measured with a 300 µs pulse,
IT=1 A
On-state dynamic
resistance
ZL70002/08/09/10
Measured with a 300 µs pulse,
dIT=1-2 A
On-state voltage
terminal to substrate
ZL70008/09
3.0
100
V
Measured with a 300 µs pulse,
IT=1 A
Off-state current
terminal to terminal
ZL70002/08/09/10
nA
Measured at 8.5 V
(ZL70002/09/10) and at 9.0 V
(ZL70008)
17
Off-state current
terminal to substrate
ZL70008/09
Id
10
100
nA
Measured at 8.5 V (ZL70008)
and at 8.0 V (ZL70009)
18
19
Parasitic capacitance
ZL70002/10
Cp
Cp
50
pF
pF
Parasitic capacitance
ZL70008/09
200
1) Electrical Characteristics are over Recommended Operating Conditions unless otherwise stated.
2) Typical figures are at 37 degrees C and are for design only
9
Zarlink Semiconductor Inc.
ZL70002/08/09/10
Data Sheet
1
AC Electrical Characteristics
2
Parameter
Sym
Min
Typ
Max
Units
Test Conditions
20
Turn-on delay
ZL70002/10
t ond
500
700
ns
Measured at 8.0 V (ZL70002/09/10)
and at 8.5 V (ZL70008)
and defined according to Figure 14.
ZL70008
ZL70009
t ond
t ond
140
60
200
100
ns
ns
21
Maximum voltage
during surge
ZL70002/08/10
Vpeak
Vpeak
13
11
15
13
V
V
Measured at peak and defined
according to Figure 14.
ZL70009
Measured at peak and defined
according to Figure 14.
1) Electrical Characteristics are over Recommended Operating Conditions unless otherwise stated.
2) Typical figures are at 37 degrees C and are for design only.
I
Slewrate= 4 A/µs
ITSM
0.9xITSM
0.1xITSM
t
tp
Figure 11 - 10 ms Surge Current Waveform
I
IT
Ibo
Ih
Ifz
Id
U
V
bo
Von
Vfz
Vd
Figure 12 - Terminal to Terminal Characteristic
10
Zarlink Semiconductor Inc.
Data Sheet
ZL70002/08/09/10
Rg
Vg
DUT
Ip
+
-
Figure 13 - Holding Current Circuit
VT
Vpeak
Ip= 4 A
Vfzmin
dI/dt = 4A/us
t ond
t
Figure 14 - Turn-on Delay Definition
11
Zarlink Semiconductor Inc.
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visit our Web Site at
www.zarlink.com
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suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. Manufacturing does
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TECHNICAL DOCUMENTATION - NOT FOR RESALE
ZL70008 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| ZL70008/UDJ | MICROSEMI | Surge Protection Circuit, DIE-7 | 获取价格 |
|
| ZL70009 | ZARLINK | Medical Surge Protection Devices | 获取价格 |
|
| ZL70009/UDJ | MICROSEMI | Surge Protection Circuit, DIE-7 | 获取价格 |
|
| ZL70009/UDJ | ZARLINK | Surge Protection Circuit, DIE-7 | 获取价格 |
|
| ZL70010 | ZARLINK | Medical Surge Protection Devices | 获取价格 |
|
| ZL70010/UDJ | ZARLINK | Surge Protection Circuit, DIE-6 | 获取价格 |
|
| ZL70100 | ZARLINK | Medical Implantable RF Transceiver | 获取价格 |
|
| ZL70100LDF1 | ZARLINK | Medical Implantable RF Transceiver | 获取价格 |
|
| ZL70100LDG1 | ZARLINK | Medical Implantable RF Transceiver | 获取价格 |
|
| ZL70101 | ZARLINK | Medical Implantable RF Transceiver | 获取价格 |
|
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