BCP53 [ZETEX]
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR; PNP硅平面中功率晶体管
| 型号： | BCP53 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
BCP53
ISSUE 3 AUGUST 1995
✪
FEATURES
*
*
Suitable for AF drivers and output stages
High collector current and Low VCE(sat)
C
COMPLEMENTARY TYPE BCP56
E
C
PARTMARKING DETAILS BCP53
BCP53 10
B
BCP53 16
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
-100
-80
-5
UNIT
Collector-Base Voltage
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
V
Peak Pulse Current
-1.5
-1
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
IC
A
Ptot
2
W
°C
Operating and Storage Temperature
Range
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
V(BR)CBO -100
TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
V
V
IC=-100µA
IC=- 10mA *
IE=-10µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V(BR)EBO
ICBO
-80
-5
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
-100
-20
nA
µA
V
CB=-30V
VCB=-30V, Tamb=150°C
Emitter Cut-Off Current IEBO
-10
VEB=-5V
µA
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.5
V
IC=-500mA, IB=-50mA*
Base-Emitter Turn-On VBE(on)
Voltage
-1.0
250
V
IC=-500mA, VCE=-2V*
Static Forward Current hFE
Transfer Ratio
40
25
IC=-150mA, VCE=-2V*
IC=-500mA, VCE=-2V*
IC=-150mA, VCE=-2V*
IC=-150mA, VCE=-2V*
BCP53-10 63
BCP53-16 100
100
160
160
250
Transition Frequency
fT
125
MHz
IC=-50mA, VCE=-10V,
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
3 - 15
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