BCV47 [ZETEX]
NPN SILICON PLANAR DARLINGTON TRANSISTORS; NPN硅平面达林顿晶体管
| 型号： | BCV47 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | NPN SILICON PLANAR DARLINGTON TRANSISTORS |
| 文件： | 总1页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 NPN SILICON PLANAR
DARLINGTON TRANSISTORS
BCV27
BCV47
ISSUE 3 SEPTEMBER 1995
✪
FEATURES
*
*
High VCEO
E
Low saturation voltage
C
COMPLEMENTARY TYPES BCV27 BCV28
BCV47 BCV48
B
PARTMARKING DETAILS
BCV27 ZFF
BCV47 ZFG
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
BCV27
40
BCV47
UNIT
V
Collector-Base Voltage
80
60
Collector-Emitter Voltage
30
V
Emitter-Base Voltage
10
V
Peak Pulse Current
800
500
100
330
mA
mA
mA
mW
°C
Continuous Collector Current
Base Current
IC
IB
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
Ptot
Tj:Tstg
-55 to +150
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL
BCV27
BCV47
UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
40
30
10
80
60
10
V
V
V
IC=100µA
IC=10mA*
IE=10µA
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
100
10
nA
nA
µA
µA
VCB = 30V
100
VCB = 60V
VCB=30V,Tamb=150oC
10
V
CB=60V,Tamb=150oC
Emitter Base
Cut-Off Current
IEBO
100
1.0
1.5
100
nA
VEB=4V
Collector-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
1.0
1.5
V
IC=100mA,IB=0.1mA*
IC=100mA,IB=0.1mA*
Base-Emitter
Saturation Voltage
V
Static Forward Current hFE
Transfer Ratio
4K
2K
4K
10K
2K
IC=100µA, VCE=1V
IC=10mA, VCE=5V*
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
10K
20K
4K
Transition Frequency fT
170 Typical
170 Typical
MHz
pF
IC=50mA, VCE=5V
f = 20MHz
Output Capacitance
Cobo
3.5 Typical
3.5 Typical
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Periodic Sample Test Only.
For typical graphs see FMMT38A datasheet
3 - 22
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