BCW60BRTA [ZETEX]
Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon;
| 型号： | BCW60BRTA |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon 晶体 晶体管 局域网 |
| 文件： | 总2页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 AUGUST 1995
BCW60
PARTMARKING DETAILS
BCW60A AA
BCW60B AB
BCW60C AC
BCW60D AD
BCW60AR CR
BCW60BR DR
BCW60CR AR
BCW60DR BR
E
C
B
COMPLEMENTARY TYPE
BCW61
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
VALUE
UNIT
V
Collector-Base Voltage
32
Collector-Emitter Voltage
Emitter-Base Voltage
32
V
5
200
V
Continuous Collector Current
Base Current
mA
mA
mW
°C
IB
50
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
PTOT
tj:tstg
330
-55 to +150
FOUR TERMINAL NETWORK DATA (I =2mA, V =5V, f=1kHz)
CE
c
hFEGroup A
hFEGroup B
hFE Group C
hFEGroup D
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
h11e
h12e
h21e
h22e
1.6
2.7
1.5
200
18
4.5
2.5
3.6
2
6.0
50
3.2
4.5
2
8.5
60
4.5
7.5
3
12
kΩ
10-4
260
24
330
30
520
50
30
100
µS
SWITCHING CIRCUIT
-VBB
VCC(+10V)
R
R
1µsec
R
+10V
tr < 5nsec
Zin ≥ 100kΩ
tr < 5nsec
50Ω
Oscilloscope
Mark/Space ratio < 0.01
Zs=50Ω
PAGE NO
BCW60
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V(BR)EBO
ICES
32
V
IC=2mA
Emitter-Base Breakdown
Voltage
5
V
IEBO=1µA
VCES=32V
Collector-Emitter
Cut-off Current
20
20
nA
µA
V
CES=32V ,Tamb=150oC
Emitter-Base Cut-Off Current
IEBO
20
nA
VEBO=4V
Collector-Emitter Saturation
Voltage
VCE(sat)
0.12
0.20
0.35
0.55
V
V
IC=10mA, IB = 0.25mA
IC= 50mA, IB =1.25mA
Base-Emitter
Saturation Voltage
VBE(SAT)
VBE
0.60
0.70
0.70
0.83
0.85
1.05
V
V
IC=10mA, IB=0.25mA
IC =50mA, IB=1.25mA
Base - Emitter Voltage
0.52
0.65
0.78
V
V
V
IC=10µA, VCE=5V
IC=2mA, VCE=5V
IC=50mA, VCE =1V
0.55
0.75
220
310
460
630
Static BCW60A
Forward
Current
Transfer BCW60B
Ratio
78
170
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
hFE
120
50
20
180
70
145
250
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
BCW60C
BCW60D
40
250
90
220
350
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
100
380
100
300
500
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
Transition Frequency
fT
125
250
8
MHz
IC =10mA, VCE =5V
f = 100MHz
Emitter-Base Capacitance
Collector-Base Capacitance
Noise Figure
Cebo
Ccbo
N
pF
pF
dB
VEBO=0.5V, f =1MHz
VCBO=10V, f =1MHz
4.5
6
2
IC= 0.2mA, VCE = 5V
RG =2KΩ, f=1KH
∆f=200Hz
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
td
tr
ton
ts
tf
toff
35
50
85
400
80
480
ns
ns
ns
ns
ns
ns
IC:IB1:- IB2 =10:1:1mA
R1=5KΩ, R2=5KΩ
VBB =3.6V, RL=990Ω
150
800
Turn-Off Time
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
Spice parameter data is available upon request for this device
相关型号：
BCW60BS62Z
Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon
FAIRCHILD
BCW60BT216
Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, MINIMOLD, SST, 3 PIN
ROHM
BCW60BTF
Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
SAMSUNG
BCW60BTI
Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
SAMSUNG
©2020 ICPDF网 联系我们和版权申明