BCW66F [ZETEX]
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR; NPN硅平面中功率晶体管
| 型号： | BCW66F |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
| 文件： | 总2页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
BCW66
ISSUE 4 - MARCH 2001
PARTMARKING DETAILS –
BCW66F –
BCW66G –
BCW66H –
EF
EG
EH
BCW66FR – 7P
BCW66GR – 5T
BCW66HR – 7M
E
C
B
COMPLEMENTARY TYPE – BCW68
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
VALUE
UNIT
V
Collector-Base Voltage
75
45
Collector-Emitter Voltage
Emitter-Base Voltage
V
5
V
Continuous Collector Current
Peak Collector Current(10ms)
Base Current
800
mA
mA
mA
mW
°C
ICM
1000
100
IB
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Ptot
330
Tj:Tstg
-55 to +150
TBA
BCW66
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
V(BR)CEO 45
V(BR)CES 75
V
V
V
ICEO=10mA
IC=10µA
Breakdown Voltage
Emitter-Base Breakdown Voltage
V(BR)EBO
ICES
5
IEBO =10µA
Collector-Emitter
Cut-off Current
20
20
nA VCES = 45V
µA VCES= 45V , Tamb=150°C
Emitter-Base Cut-Off Current
IEBO
20
nA VEBO =4V
Collector-Emitter Saturation
Voltage
VCE(sat)
0.3
0.7
V
V
IC=100mA, IB = 10mA
IC= 500mA, IB = 50mA*
Base-Emitter Saturation Voltage
VBE(sat)
2
V
IC=500mA, IB=50mA*
Static
BCW66F hFE
75
100
35
IC= 10mA, VCE
= 1V
IC=100mA, VCE= 1V*
IC=500mA, VCE= 2V*
Forward
Current
Transfer
160
250
250
BCW66G hFE
110
160
60
IC= 10mA, VCE
= 1V
IC=100mA, VCE= 1V*
IC=500mA, VCE= 2V*
400
630
BCW66H hFE
180
250
100
IC= 10mA, VCE
= 1V
IC=100mA, VCE= 1V*
IC=500mA, VCE= 2V*
350
Transition Frequency
fT
100
MHz IC =20mA, VCE =10V
f = 100MHz
Output Capacitance
Input Capacitance
Noise Figure
Cobo
8
2
12
80
10
pF VCB =10V, f =1MHz
pF VEB =0.5V, f =1MHz
Cibo
N
dB IC= 0.2mA, VCE= 5V
RG =1kΩ
Switching times:
Turn-On Time
Turn-Off Time
ton
toff
100
400
ns
ns
IC=150mA
B1=- IB2 =15mA
RL=150Ω
I
Spice parameter data is available upon request for this device
*Measured under pulsed conditions.
TBA
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