BCX54 [ZETEX]
SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS; SOT89 NPN硅平面中功率晶体管型号: | BCX54 |
厂家: | ZETEX SEMICONDUCTORS |
描述: | SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS |
文件: | 总1页 (文件大小:20K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BCX54
BCX55
BCX56
SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 – FEBRUARY 1996
✪
PARTMARKING DETAILS:-
C
BCX54 – BA
BCX55 – BE
BCX56 – BH
BCX54-10 – BC
BCX55-10 – BG
BCX56-10 – BK
BCX54-16 – BD
BCX55-16 – BM
BCX56-16 – BL
E
COMPLEMENTARY TYPES:-
C
B
BCX54 – BCX51
BCX55 – BCX52
BCX56 – BCX53
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
BCX54 BCX55
BCX56
100
UNIT
V
Collector-Base Voltage
45
45
60
Collector-Em itter Voltage
Em itter-Base Voltage
60
80
V
5
V
Peak Pulse Current
2
A
Continuous Collector Current
Power Dissipation at Tam b=25°C
IC
1
A
Ptot
1
W
°C
Operating and Storage Tem perature Range Tj:Tstg
-65 to +150
ELECTRICAL CHARACTERISTICS (at T
am b
= 25°C unless otherw ise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown BCX54 V(BR)CBO
45
60
100
Voltage
BCX55
BCX56
V
I
=100µA
C
Collector-Em itter
Breakdown Voltage
BCX54 V(BR)CEO
BCX55
BCX56
45
60
80
V
V
I
=10m A*
C
Em itter-Base Breakdown Voltage
Collector Cut-Off Current
V(BR)EBO
ICBO
5
IE =10µA
0.1
20
VCB =30V
V
µA
µA
CB =30V, Tam b =150°C
Em itter Cut-Off Current
IEBO
20
nA
V
VEB =4V
Collector-Em itter Saturation Voltage VCE(sat)
0.5
1.0
IC =500m A, IB =50m A*
IC =500m A, VCE =2V*
IC =5m A, VCE =2V*
Base-Em itter Turn-On Voltage
VBE(on)
hFE
V
Static Forward Current Transfer
Ratio
25
40
25
63
250
I
I
I
C =150m A, VCE =2V*
C =500m A, VCE =2V*
C =150m A, VCE =2V*
IC =150m A, VCE =2V*
–10
–16
160
250
100
Transition Frequency
Output Capacitance
fT
150
MHz IC =50m A, VCE =10V,
f=100MHz
Cobo
15
pF
VCB =10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
3 - 35
相关型号:
BCX54-10
NPN Silicon AF Transistors (For AF driver and output stages High collector current)
INFINEON
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