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BCX55 [ZETEX]

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS; SOT89 NPN硅平面中功率晶体管
BCX55
型号： BCX55
厂家： ZETEX SEMICONDUCTORS    ZETEX SEMICONDUCTORS
描述：

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
SOT89 NPN硅平面中功率晶体管

晶体 小信号双极晶体管 放大器 局域网
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BCX54  
BCX55  
BCX56  
SOT89 NPN SILICON PLANAR  
MEDIUM POWER TRANSISTORS  
ISSUE 3 – FEBRUARY 1996  
✪
PARTMARKING DETAILS:-  
C
BCX54 – BA  
BCX55 – BE  
BCX56 – BH  
BCX54-10 – BC  
BCX55-10 – BG  
BCX56-10 – BK  
BCX54-16 – BD  
BCX55-16 – BM  
BCX56-16 – BL  
E
COMPLEMENTARY TYPES:-  
C
B
BCX54 – BCX51  
BCX55 – BCX52  
BCX56 – BCX53  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
BCX54 BCX55  
BCX56  
100  
UNIT  
V
Collector-Base Voltage  
45  
45  
60  
Collector-Em itter Voltage  
Em itter-Base Voltage  
60  
80  
V
5
V
Peak Pulse Current  
2
A
Continuous Collector Current  
Power Dissipation at Tam b=25°C  
IC  
1
A
Ptot  
1
W
°C  
Operating and Storage Tem perature Range Tj:Tstg  
-65 to +150  
ELECTRICAL CHARACTERISTICS (at T  
am b  
= 25°C unless otherw ise stated).  
PARAMETER  
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.  
Collector-Base Breakdown BCX54 V(BR)CBO  
45  
60  
100  
Voltage  
BCX55  
BCX56  
V
I
=100µA  
C
Collector-Em itter  
Breakdown Voltage  
BCX54 V(BR)CEO  
BCX55  
BCX56  
45  
60  
80  
V
V
I
=10m A*  
C
Em itter-Base Breakdown Voltage  
Collector Cut-Off Current  
V(BR)EBO  
ICBO  
5
IE =10µA  
0.1  
20  
VCB =30V  
V
µA  
µA  
CB =30V, Tam b =150°C  
Em itter Cut-Off Current  
IEBO  
20  
nA  
V
VEB =4V  
Collector-Em itter Saturation Voltage VCE(sat)  
0.5  
1.0  
IC =500m A, IB =50m A*  
IC =500m A, VCE =2V*  
IC =5m A, VCE =2V*  
Base-Em itter Turn-On Voltage  
VBE(on)  
hFE  
V
Static Forward Current Transfer  
Ratio  
25  
40  
25  
63  
250  
I
I
I
C =150m A, VCE =2V*  
C =500m A, VCE =2V*  
C =150m A, VCE =2V*  
IC =150m A, VCE =2V*  
–10  
–16  
160  
250  
100  
Transition Frequency  
Output Capacitance  
fT  
150  
MHz IC =50m A, VCE =10V,  
f=100MHz  
Cobo  
15  
pF  
VCB =10V, f=1MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%  
3 - 35  

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