BCX71JRTC [ZETEX]
Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon;
| 型号： | BCX71JRTC |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon |
| 文件： | 总2页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 PNP SILICON PLANAR
BCX71
SMALL SIGNAL TRANSISTORS
ISSUE 3 – MARCH 2005
PARTMARKING DETAIL –
BCX71G – BG
BCX71H – BH
BCX71J – BJ
E
C
BCX71K – BK
BCX71GR – CG
BCX71HR – 6P
BCX71JR – J8
BCX71KR – CK
B
SOT23
ABSOLUTE MA XIMU M RATINGS.
PARAMETER
SYMBOL
VCES
VCEO
VEBO
IC
VALUE
UNIT
V
Collector-Base Voltage
-45
-45
Collector-Emitter Voltage
Emitter-Base Voltage
V
-5
V
Continuous Collector Current
Base Current
-200
mA
mA
mW
°C
IB
-50
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
PTOT
Tj:Tstg
330
-55 to +150
SW ITCHI NG CI RCUI T
VCC (-10V)
RL
+VBB
R2
1µs
R1
-10V
tr < 5nsec
Zin >100kΩ
Oscilloscope
tr <5nsec
Mark/S pace ra tio < 0.01
ZS = 50 Ω
50Ω
BAY63
FOUR TERMINAL NETWORK DATA (I =2mA, V =5V, f=1kHz)
C
CE
hFEGroup G
hFEGroup F
hFEGroup J
hFEGroup K
Min. Typ. Max. Min. Typ Max. Min. Typ Max. Min. Typ Max.
h11e
h12e
h21e
h22e
1.6
2.7
1.5
200
18
4.5
2.5
3.6
2
6.0
3.2
4.5
2
8.5
4.5
7.5
3
12
K
10-4
260
24
330
30
520
50
30
50
60
100
µs
Spice parameter data is available upon request for this device
BCX71
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V(BR)EBO
ICES
-45
V
ICEO=-2mA
Emitter-Base
Breakdown Voltage
-5
V
IEBO=-1µA
Collector-Emitter Cut-off
Current
-20
-20
nA
µA
V
V
CES=-45V
CES=-45V ,Tamb=150oC
Emitter-Base Cut-Off Current
IEBO
-20
nA
VEBO=-4V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.12 -0.25
-0.25 -0.55
V
V
IC=-10mA,IB= -0.25mA
IC=-50mA, IB =-1.25mA
Base-Emitter
Saturation Voltage
VBE(sat)
VBE
-0.60 -0.70 -0.85
-0.68 -0.80 -1.05
V
V
IC =-10mA, IB=-0.25mA
IC =-50mA, IB=-1.25mA
Base - Emitter Voltage
-0.55
-0.65 -0.75
-0.72
V
V
V
IC=-10µA, VCE=-5V
IC=-2mA, VCE=-5V
IC=-50mA, VCE =-1V
-0.6
Static
140
170
IC=-10µA, VCE =-5V
IC=-2mA, VCE =-5V
IC=-50mA, VCE =-1V
Forward
Current
Transfer
Ratio
BCX71G
BCX71H
hFE
120
60
220
310
460
630
30
180
80
200
250
IC=-10µA, VCE =-5V
IC=-2mA, VCE =-5V
IC=-50mA, VCE =-1V
40
250
100
270
350
IC=-10µA, VCE =-5V
IC=-2mA, VCE =-5V
IC=-50mA, VCE =-1V
BCX71J
BCX71K
100
380
110
340
500
IC=-10µA, VCE =-5V
IC=-2mA, VCE =-5V
IC=-50mA, VCE =-1V
Transition Frequency
fT
180
11
MHz
IC =-10mA, VCE= -5V
f = 100MHz
Emitter-Base Capacitance
Collector-Base Capacitance
Noise Figure
Cebo
Ccbo
N
pF
pF
dB
VEBO= -0.5V,f =1MHz
VCBO= -10V, f =1MHz
6
6
2
IC =- 0.2mA, VCE =- 5V
RG=2KΩ, f=1KHz
∆f=200Hz
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
td
tr
ton
ts
tf
toff
35
50
85
400
80
480
ns
ns
ns
ns
ns
ns
-IC : IB1: - IB2 =10:1:1mA
R1=R2=5KΩ
VBB =-3.6V, RL=990Ω
150
800
Turn-Off Time
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
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