BFN17 [ZETEX]

SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR; SOT89 PNP硅平面高压晶体管

BFN17


型号：	BFN17
厂家：	ZETEX SEMICONDUCTORS
描述：	SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR SOT89 PNP硅平面高压晶体管晶体晶体管高压局域网
文件：	总1页 (文件大小：17K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SOT89 PNP SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

BFN17

ISSUE 3 - OCTOBER 1995

✪

C

COMPLEMENTARY TYPE -

PARTMARKING DETAILS -

BFN16

DG

E

C

B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

S YMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

-250

UNIT

Co lle cto r-Ba se Vo lta g e

Co lle cto r-Em itte r Vo lta g e

Em itte r-Ba s e Vo lta g e

V

V

-250

-5

V

Pe ak Pu ls e Cu rre n t

-500

m A

m A

m A

W

Co n tin u o u s Co lle cto r Cu rre n t

Bas e Cu rren t

I_C

-200

I_B

-100

Po w er Dis s ip a tio n a t T_{a m b}=25°C

Op e ratin g a n d S to ra g e Te m p e ratu re Ra n g e

P_{to t}

-1

T_j:T_{s tg}

-65 to +150

°C

ELECTRICAL CHARACTERISTICS (at T

= 25°C).

am b

PARAMETER

S YMBOL MIN.

MAX.

UNIT

V

CONDITIONS .

Co lle cto r-Ba se

Bre a kd o w n Vo ltag e

V_(BR)CBO

-250

-250

-5

I_C=-100µA

Co lle cto r-Em itte r

Bre a kd o w n Vo ltag e

V_(BR)CEO

V

V

I_C=-1m A

Em itte r-Ba s e Bre a kd o w n V_(BR)EBO

Vo lta g e

I_E=-100µA

V_CB=-250V

Co lle cto r Cu t-Off Cu rre n t I_CBO

-100

-20

n A

µA

V_CB=-250V, T_{a m b}=150 °C

Em itte r Cu t-Off Cu rren t

I_EBO

-100

-0.4

n A

V

V_EB=-3V

Co lle cto r-Em itte r

S atu ra tio n Vo lta g e

V_{CE(s a t)}

I_C=-20m A, I_B=-2m A

I_C=-20m A, I_B=-2m A

Bas e -Em itte r S atu ra tio n

Vo lta g e

V_{BE(s a t)}

h _FE

-0.9

V

S ta tic Fo rw a rd Cu rren t

Tra n s fe r Ra tio

25

40

40

I_C=-1m A, V_CE=-10V*

I_C=-10m A, V_CE=-10V*

I_C=-30m A, V_CE=-10V*

Tra n s itio n Fre q u e n cy

Ou tp u t Ca p a cita n ce

f_T

Typ .100

MHz

p F

I_C=-20m A, V_CE=-10V*

f=20MHz

C_{o b o}

Typ . 2.5

V_CB=-30V,f=1MHz

* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

For typical characteristics graphs see FMMTA92 datasheet

3 - 43

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