BSP42 [ZETEX]
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR; NPN硅平面中功率晶体管
| 型号： | BSP42 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
BSP42
ISSUE 4 – MARCH 2001
✪
C
COMPLEMENTARY TYPE –
BSP32
BSP42
E
PARTMARKING DETAIL –
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
90
Collector-Emitter Voltage
Emitter-Base Voltage
80
V
5
V
Peak Pulse Current
2
A
Continuous Collector Current
Base Current
IC
1
A
IB
100
2
mA
W
°C
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Ptot
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
90
80
5
V
IC=100µA
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
V
V
IC=10mA
IE=10µA
VCB=60V
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
100
50
nA
µA
V
CB=60V, Tamb=125°C
Collector-Emitter
VCE(sat)
VBE(sat)
hFE
0.25
0.5
V
V
IC =150mA, IB=15mA
Saturation Voltage
IC =500mA, IB=50mA
Base-Emitter
Saturation Voltage
1.0
1.2
V
V
IC =150mA, IB=15mA
I
C =500mA, IB=50mA
Static Forward
Current Transfer Ratio
10
40
30
I
I
I
C =100µA, VCE=5V
C =100mA, VCE=5V
C =500mA, VCE=5V
120
Output Capacitance
Input Capacitance
Transition Frequency
Cobo
Cibo
fT
12
90
pF
VCB =10V, f =1MHz
VEB =0.5V, f=1MHz
pF
100
MHz
IC=50mA, VCE=10V
f =35MHz
Turn-On Time
Turn-Off Time
Ton
Toff
250
ns
ns
VCC =20V, IC =100mA
I
B1 =-IB2 =-5mA
1000
*Measured under pulsed conditions.
For typical characteristics graphs see FMMT493 datasheet.
TBA
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