BSR33TC [ZETEX]
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, SOT-89, 3 PIN;
| 型号： | BSR33TC |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, SOT-89, 3 PIN 晶体 小信号双极晶体管 开关 局域网 |
| 文件： | 总1页 (文件大小：17K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT89 PNP SILICON PLANAR
BSR31
BSR33
MEDIUM POWER TRANSISTORS
ISSUE 3 – FEBRUARY 1996
COMPLEMENTARY TYPE –
PARTMARKING DETAILS –
BSR31 – BSR41
BSR33 – BSR43
C
BSR31 – BR2
BSR33 – BR4
E
C
B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
BSR31
-70
BSR33
-90
UNIT
V
Collector-Base Voltage
Collector-Em itter Voltage
-60
-80
V
Em itter-Base Voltage
-5
-2
-1
1
V
Peak Pulse Current
A
Continuous Collector Current
Power Dissipation at Tam b =25°C
Operating and Storage Tem perature Range
ELECTRICAL CHARACTERISTICS (at T
IC
A
PTOT
Tj:Tstg
W
°C
-65 to +150
= 25°C unless otherw ise stated).
am b
PARAMETER
SYMBOL MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage BSR33
BSR31 V(BR)CBO
-70
-90
V
V
IC=-100µA
IC=-100µA
Collector-Em itter
Breakdown Voltage BSR33
BSR31 V(BR)CEO
-60
-80
V
IC=-10m A
IC=-10m A
Em itter-Base
Breakdown Voltage
V(BR)EBO
ICBO
-5
V
IE=-10m A
Collector Cut-Off Current
-100
-50
nA
µA
VCB=-60V
V
CB=-60V, Tam b=125°C
IC =-150m A, IB=-15m A*
C =-500m A, IB=-50m A*
IC=-150m A, IB=-15m A*
C =-500m A, IB=-50m A*
C =-100µA, VCE =-5V*
C =-100m A, VCE =-5V*
C =-500m A, VCE =-5V*
Collector-Em itter Saturation VCE(sat)
Voltage
-0.25
-0.5
V
V
I
Base-Em itter
VBE(sat)
-1.0
-1.2
V
V
Saturation Voltage
I
Static Forward Current
Transfer Ratio
hFE
30
100
50
I
I
I
300
Collector Capacitance
Em itter Capacitance
Transition Frequency
Cc
Ce
fT
20
pF
VCB =-10V, f =1MHz
VEB =-0.5V, f =1MHz
120
pF
100
MHz
IC=-50m A, VCE=-10V
f =35MHz
Turn-On Tim e
Turn-Off Tim e
Ton
Toff
500
650
ns
ns
VCC =-20V, IC =-100m A
IB1 =-IB2 =-5m A
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice param eter data is available upon request for this device
3 - 66
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