BSR43TA [ZETEX]
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon;
| 型号： | BSR43TA |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon 晶体 小信号双极晶体管 局域网 |
| 文件： | 总1页 (文件大小：17K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
BSR41
BSR43
ISSUE 3 – FEBRUARY 1996
✪
COMPLEMENTARY TYPES
–
–
BSR43 - BSR33
BSR41 - BSR31
C
PARTMARKING DETAIL
BSR43 - AR4
BSR41 - AR2
E
C
B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
BSR41
70
BSR43
90
UNIT
V
Collector-Base Voltage
Collector-Em itter Voltage
60
80
V
Em itter-Base Voltage
5
2
V
Peak Pulse Current
A
Continuous Collector Current
Base Current
IC
1
A
IB
100
1
m A
W
Power Dissipation at Tam b =25°C
Operating and Storage Tem perature Range
ELECTRICAL CHARACTERISTICS (at T
PTOT
Tj:Tstg
-65 to +150
°C
= 25°C unless otherw ise stated).
am b
PARAMETER
SYMBOL MIN.
MAX.
UNIT
V
CONDITIONS.
Collector-Base
BSR43
V(BR)CBO
90
70
IC=100µA
Breakdown Voltage BSR41
Collector-Em itter BSR43
Breakdown Voltage BSR41
Em itter-Base Breakdown Voltage V(BR)EBO
V(BR)CEO
80
60
V
IC=10m A *
5
V
IE=10µA
Collector Cut-Off Current
ICBO
100
50
nA
µA
VCB=60V
V
CB=60V, Tam b =125°C
IC =150m A, IB =15m A
C =500m A, IB =50m A
IC =150m A, IB =15m A
C =500m A, IB =50m A
C =100µA, VCE =5V
C =100m A, VCE =5V
C =500m A, VCE =5V
Collector-Em itter
Saturation Voltage
VCE(sat)
VBE(sat)
hFE
0.25
0.5
V
V
I
Base-Em itter
Saturation Voltage
1.0
1.2
V
V
I
Static Forward
Current Transfer Ratio
30
100
50
I
I
I
300
Collector Capacitance
Em itter Capacitance
Transition Frequency
Cc
Ce
fT
12
90
pF
VCB =10V, f=1MHz
VEB =0.5V, f=1MHz
pF
100
MHz
IC=50m A, VCE=10V
f =35MHz
Turn-On Tim e
Turn-Off Tim e
Ton
Toff
250
ns
ns
VCC=20V, IC =100m A
IB1 =IB2 =5m A
1000
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMT493 datasheet.
3 - 68
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