BSS66RTA [ZETEX]
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon;
| 型号： | BSS66RTA |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon 晶体 开关 晶体管 局域网 |
| 文件： | 总1页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 NPN SILICON PLANAR MEDIUM
POWER SWITCHING TRANSISTORS
BSS66
BSS67
ISSUE 2 SEPTEMBER 1995
✪
PARTMARKING DETAILS BSS66 - M6
BSS67 - M7
E
C
BSS66R - M8
BSS67R - M9
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
60
Collector-Emitter Voltage
Emitter-Base Voltage
40
V
6
200
V
Peak Pulse Current
mA
mA
mA
mW
°C
Continuous Collector Current
Base Current
IC
100
IB
50
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
PTOT
tj:tstg
330
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
PARAMETER
SYMBOL MIN. MAX. UNIT
CONDITIONS.
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector- Emitter Cut-off Current
V
V
V
I
40
60
6
V
I =1mA
I =10µA
I =10µA
V
V
50
nA
V
=30V
Collector-Emitter
Saturation Voltage
V
0.20
0.30
V
V
I =10mA, I =1mA
I =50mA, I =5mA*
Base-Emitter Saturation Voltage
V
h
0.65
0.85
0.95
V
V
I =10mA, I =1mA
C
I =50mA, I =5mA*
Static Forward Current
Transfer Ratio
BSS66
20
35
50
30
15
I =100µA,
I =1mA,
150
300
I =10mA, V =1V
I =50mA*,
I =100mA*,
Static Forward Current
Transfer Ratio
BSS67
h
40
70
100
60
30
I =100µA,
I =1mA,
I =10mA, V =1V
I =50mA*,
I =100mA*,
Transition Frequency
BSS66
BSS67
f
250
300
MHz
MHz
I =10mA, V =20V
f=100MHz
Collector-Base Capacitance
Emitter-Base Capacitance
Noise Figure
C
C
N
4
8
pF
pF
dB
V
V
=5V, f=100kHz
=0.5V, f=100kHz
Typ. 6
I =100µA, V =5V
R =1kΩ, f=10Hz to15.7 kHz
Switching times: Delay; Rise
Storage Time
Fall Time
t ; t
35
ns
ns
ns
V
I
=3V, I =10mA
= I =1mA
t
t
200
50
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
PAGE NUMBER
相关型号：
BSS670
BSS670 is single Nch 60V 650mA MOSFET and ESD protection diode are included in the SST3 package. This product is ideal for switching circuit and low-side load switch, relay driver applications.
ROHM
BSS670S2LH6327XTSA1
Small Signal Field-Effect Transistor, 0.54A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
INFINEON
BSS670S2LL6327
Small Signal Field-Effect Transistor, 0.54A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3
INFINEON
BSS670S2LL6327XT
Small Signal Field-Effect Transistor, 0.54A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3
INFINEON
BSS670S2LXT
Small Signal Field-Effect Transistor, 0.54A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, SOT-23, 3 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明