FCX705TA [ZETEX]

120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR; 120V NPN硅高压达林顿晶体管


型号：	FCX705TA
厂家：	ZETEX SEMICONDUCTORS
描述：	120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR 120V NPN硅高压达林顿晶体管晶体晶体管达林顿晶体管高压
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中文：	中文翻译
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FCX705

120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR

SUMMARY

V_CEO=120V; V_CE(sat)= 1.3V; I_C= 1A

DESCRIPTION

This new NPN Darlington transistor provides users with very efficeint

perform ance com bining low V_CE(sat) and very high Hfe to give extrem ely low

on state losses at 120V operation. This m akes it deal for use in a variety of

efficient driving functions including m otors, lam ps relays and solenoids and

will also benefit circuits requiring high output current switching.

S OT 8 9

FEATURES

•

Low Saturation Voltage

Hfe m in 3K @ 1A

I_C= -2A Continuous

SOT89 package with Ptot - 1W

Specification is also available in Eline and SOT223 package outlines

APPLICATIONS

•

Various driving functions

- Lam ps

- Motors

- Relays and solenoids

•

High output current switches

ORDERING INFORMATION

DEVICE

REEL S IZE

TAPE WIDTH

(m m )

QUANTITY

PER REEL

(in ch e s )

FCX705TA

12m m e m b o s s e d 1000 u n its

Top View

DEVICE MARKING

705

ISSUE 2 - AUGUST 2001

FCX705

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

S YMBOL

LIMIT NPN

UNIT

Co lle cto r-Ba s e Vo lta g e

Co lle cto r-Em itte r Vo lta g e

Em itte r-Ba s e Vo lta g e

-140

-120

-10

-4

CBO

CEO

EBO

Pe a k Pu ls e Cu rre n t

Co n tin u o u s Co lle cto r Cu rre n t

-1

Po w e r Dis s ip a tio n a t TA=25°C (a )

Lin e a r De ra tin g Fa cto r

m W/°C

Po w e r Dis s ip a tio n a t TA=25°C (b )

Lin e a r De ra tin g Fa cto r

2.8

m W/°C

Op e ra tin g a n d S to ra g e Te m p e ra tu re Ra n g e

T :T

-55 to +150

°C

s tg

THERMAL RESISTANCE

PARAMETER

S YMBOL

VALUE

UNIT

°C/W

J u n ctio n to Am b ie n t (a )

J u n ctio n to Am b ie n t (b )

125

θJ A

NOTES

(a) For a device surface m ounted on 25m m x 25m m FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions

(b) For a device surface m ounted on FR4 PCB m easured at tр5 secs.

ISSUE 2 - AUGUST 2001

FCX705

ELECTRICAL CHARACTERISTICS (at T_{am b}= 25°C unless otherw ise stated).

PARAMETER

S YMBOL MIN.

TYP.

MAX. UNIT CONDITIONS .

Co lle cto r-Ba s e Bre a kd o w n

Vo lta g e

-140

-120

-10

I = -100␮A

(BR)CBO

(BR)CEO

Co lle cto r-Em itte r Bre a kd o w n

Vo lta g e

I = -10m A*

Em itte r-Ba s e Bre a kd o w n Vo lta g e

Co lle cto r Cu t-Off Cu rre n t

I = -100␮A

(BR)EBO

CBO

-100

-10

n A

µA

= -10V

= -120V

Ta m b = 100°C

Em itte r Cu t-Off Cu rre n t

-0.1

-10

µA

= -8V

EBO

Co lle cto r Em itte r Cu t-Off Cu rre n t

= -120V

CES

Co lle cto r-Em itte r S a tu ra tio n

Vo lta g e

-1.3

-2.5

I = -1A, I = -1m A*

C B

CE(s a t)

I = -2A, I = -2m A*

Ba s e -Em itte r S a tu ra tio n Vo lta g e

Ba s e -Em itte r Tu rn -On Vo lta g e

-1.8

-1.7

I = -1A, I = -1m A*

C B

BE(s a t)

BE(o n )

I = -1A, V = -5V*

S ta tic Fo rw a rd Cu rre n t Tra n s fe r

Ra tio

I = -50m A, V = -5V*

C CE

I = -500m A, V = -5V*

30K

I = -1A, V = -5V*

C CE

I = -2A, V = -5V*

Tra n s itio n Fre q u e n cy

160

MHz

I = -100m A, V = -10V

f= 20MHz

In p u t Ca p a cita n ce

Ou tp u t Ca p a cita n ce

Tu rn -On Tim e

0.6

p F

µs

= -500m V, f= 1MHz

= -10V, f= 1MHz

ib o

o b o

(o n )

I = -500m A, V = -10V

C CE

=I = -0.5m A

B1 B2

Tu rn -Off Tim e

0.8

µs

I = -500m A, V = -10V

C CE

(o ff)

=I = -0.5m A

B1 B2

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

Nb. Spice param eter data is available upon request for this device.

ISSUE 2 - AUGUST 2001

FCX705

NPN TYPICAL CHARACTERISTICS

-55°C

I^C/I^B=1000

+100°C

+25°C

-55°C

+25°C

+100°C

+175°C

V^CE=-5V

1.8

1.6

1.4

1.2

16k

14k

12k

10k

1.0

0.8

0.6

0.4

0.2

0.001

0.01

0.1

10 20

0.001

0.01

0.1

10 20

IC - Collector Current (Am ps)

hFE v IC

VCE(sat) v IC

2.4

-55°C

+25°C

-55°C

+25°C

V^CE=-5V

I^C/I^B=1000

1.8

1.6

1.4

1.2

2.2

2.0

+100°C

+175°C

+100°C

1.8

1.6

1.0

0.8

0.6

0.4

1.4

1.2

1.0

0.8

0.6

0.2

0.001

0.01

0.1

10 20

0.001

0.01

0.1

10 20

IC - Collector Current (Am ps)

VBE(sat) v IC

VBE(on) v IC

Single Pulse Test at T^amb=25°C

D.C.

100ms

10ms

1.0ms

0.1ms

0.1

ZTX704

100

1000

VCE - Collector Voltage (Volts)

Safe Operating Area

ISSUE 2 - AUGUST 2001

FCX705

PACKAGE DIMENSIONS

PAD LAYOUT DETAILS

2.4

D B

4.0

1.5

DIM

Millim e tre s

Ma x

In ch e s

Ma x

1.2

1.0

3.2

1.2

Min

4.40

3.75

1.40

Min

4.60

0.173

.150

0.181

0.167

0.630

0.102

0.018

0.022

0.072

0.112

0.063

4.25

SOT89 pattern.

1.60

0.550

2.60

0.28

0.38

1.50

2.60

2.90

1.4

0.45

0.011

0.015

0.060

0.102

0.114

0.055

0.55

1.80

2.85

3.10

1.60

Zetex plc.

Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.

Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)

Fax: (44)161 622 4420

Zetex GmbH

Zetex Inc.

Suite 315

Zetex (Asia) Ltd.

3701-04 Metroplaza, Tower 1 agents and distributors in

These are supported by

Streitfeldstraße 19

D-81673 München

Germany

700 Veterans Memorial Highway Hing Fong Road,

Hauppauge NY 11788

USA

major countries world-wide

Kwai Fong

Hong Kong

Telefon: (49) 89 45 49 49 0

Fax: (49) 89 45 49 49 49

Telephone: (631) 543-7100

Fax: (631) 864-7630

Telephone:(852) 26100 611

Fax: (852) 24250 494

www.zetex.com

This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for

any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves

the right to alter without notice the specification, design, price or conditions of supply of any product or service.

ISSUE 2 - AUGUST 2001

FCX705TA [ZETEX]

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