FMMT2222-1BZ [ZETEX]
SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS; SOT23 NPN硅平面开关晶体管
| 型号： | FMMT2222-1BZ |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS |
| 文件： | 总2页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 NPN SILICON PLANAR
SWITCHING TRANSISTORS
ISSUE 3 FEBRUARY 1996
FMMT2222
FMMT2222A
FEATURES
*
Fast switching
E
PARTMARKING DETAILS
C
FMMT2222
1BZ
2P
FMMT2222A 1P
FMMT2222AR 3P
FMMT2222R
B
COMPLEMENTARY TYPES
FMMT2222 FMMT2907
FMMT2222A FMMT2907A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
FMMT2222
FMMT2222A
UNIT
V
Collector-Base Voltage
60
30
5
75
40
6
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Continuous Collector Current
Power Dissipation at Tamb=25°C
600
330
mA
mW
°C
Ptot
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL FMMT2222 FMMT2222A UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
60
30
5
75
40
6
V
V
V
IC=10µA, IE=0
IC=10mA, IB=0
IE=10µA, IC=0
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
10
10
nA
µA
nA
µA
V
CB=50V, IE=0
CB=60V, IE=0
VCB=50V, IE=0, Tamb=150°C
VCB=60V, IE=0, Tamb=150°C
10
V
10
10
Emitter Cut-Off
Current
IEBO
10
10
nA
VEB=3V, IC=0
Collector-Emitter
Cut-Off Current
ICEX
10
nA
VCE=60V, VEB(off)=3V
Collector-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
hFE
0.3
1.0
0.3
1.0
V
V
IC=150mA, IB=15mA*
IC=500mA, IB=50mA*
Base-Emitter
Saturation Voltage
0.6
2.0
2.6
0.6
1.2
2.0
V
V
IC=150mA, IB=15mA*
IC=500mA, IB=50mA*
Static Forward
Current Transfer
Ratio
35
50
75
35
100
50
30
35
50
75
35
100
50
40
IC=0.1mA, VCE=10V*
IC=1mA, VCE=10V
IC=10mA, VCE=10V*
IC=10mA, VCE=10V, Tamb=-55°C
IC=150mA, VCE=10V*
IC=150mA, VCE=1V*
IC=500mA, VCE=10V*
300
300
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
FMMT2222
FMMT2222A
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL FMMT2222
MIN. MAX. MIN. MAX.
250 300
FMMT2222A
UNIT CONDITIONS.
Transition
Frequency
fT
MHz
pF
IC=20mA, VCE=20V
f=100MHz
Output Capacitance
Cobo
Cibo
8
8
VCB=10V, IE=0,
f=140KHz
Input Capacitance
30
25
pF
VEB=0.5V, IC=0
f=140KHz
Delay Time
Rise Time
td
tr
10
25
10
25
ns
ns
VCC=30V, VBE(off=) 0.5V
IC=150mA, IB1=15mA
(See Delay Test Circuit)
Storage Time
Fall Time
ts
tf
225
60
225
60
ns
ns
VCC=30V, IC=150mA
IB1= IB2=15mA
(See Storage Test
Circuit)
DELAY AND RISE TEST CIRCUIT
+30V
Generator rise time <2ns
Pulse width (t1)<200ns
Duty cycle = 2%
200Ω
619Ω
9.9V
Scope:
0
Rin > 100 kΩ
Cin < 12 pF
0.5V
Rise Time < 5 ns
STORAGE TIME AND FALL TIME TEST CIRCUIT
=100µs
<5ns
Ω
+16.2 V
0
1KΩ
Scope:
R
C
> 100 kΩ
1N916
< 12 pF
-13.8 V
Rise Time < 5 ns
=500µs
Duty cycle = 2%
相关型号：
FMMT2222A
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
DIODES
FMMT2222AR
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
DIODES
FMMT2222ARTA
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
DIODES
FMMT2222R
Small Signal Bipolar Transistor, 0.6A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
DIODES
FMMT2222RTA
Small Signal Bipolar Transistor, 0.6A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
DIODES
©2020 ICPDF网 联系我们和版权申明