FMMT5179TC [ZETEX]
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN,;型号: | FMMT5179TC |
厂家: | ZETEX SEMICONDUCTORS |
描述: | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, |
文件: | 总2页 (文件大小:92K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SOT23 NPN SILICON PLANAR
HIGH FREQUENCY TRANSISTOR
ISSUE 3 - JANUARY 1996
FMMT5179
FEATURES
*
*
*
High fT=900MHz Min
Max capacitance=1pF
Low noise 4.5dB
E
C
B
PARTMARKING DETAIL - 179
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
VALUE
UNIT
V
Collector-Base Voltage
20
12
Collector-Emitter Voltage
V
Emitter-Base Voltage
2.5
V
Continuous Collector Current
Power Dissipation
50
mA
mW
°C
Ptot
330
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
Tj:Tstg
-55 to +150
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
VCEO(SUS) 12
MAX.
UNIT CONDITIONS.
Collector-Emitter Sustaining
Voltage
V
V
V
IC= 3mA, IB=0
IC= 1µA, IE=0
IE=10µA, IC=0
Collector-Base Breakdown
Voltage
V(BR)CBO
V(BR)EBO
ICBO
20
Emitter-Base Breakdown
Voltage
2.5
Collector Cut-Off
Current
0.02
1.0
V
CB=15V, IE=0
µA
µA
VCB=15V, IE=0, Tamb=150°C
Static Forward Current
Transfer Ratio
hFE
25
250
0.4
1.0
IC=3mA, VCE=1V
IC=10mA, IB=1mA
IC=10mA, IB=1mA
Collector-Emitter Saturation
Voltage
VCE(sat)
VBE(sat)
V
V
Base-Emitter
Saturation Voltage
Transition Frequency
fT
900
2000
1
MHz IC=5mA, VCE=6V, f=100MHz
Collector-Base Capacitance
Small Signal Current Gain
Ccb
hfe
pF
IE=0, VCB=10V, f=1MHz
25
3
300
14
IC=2mA, VCE=6V, f=1KHz
IE=2mA, VCB=6V, f=31.9MHz
Collector Base Time Constant rbCc
ps
Noise Figure
NF
4.5
dB
IC=1.5mA, VCE=6V
RS=50Ω, f=200MHz
Common-Emitter Amplifier
Power Gain
Gpe
15
dB
IC=5mA, VCE=6V
f=200MHz
Spice parameter data is available upon request for this device
3 - 169
FMMT5179
TYPICAL CHARACTERISTICS
200
1.0
VCE=1V
VCE=1V
175°C
-55°C
0.8
0.6
0.4
0.2
150
25°C
100°C
100°C
175°C
25°C
100
-55°C
50
0
0
0.1
1
10
100
0.1
1
10
100
IC - (m A)
IC - (m A)
hFE v IC
VBE(on) v IC
1500
1000
500
1.2
IE=0
f=1MHz
VCE=6V
f=100MHz
1.0
0.8
0.6
0.4
0.2
0
0.1
1
10
100
0
0.1
1
10
30
IC - (m A)
VCB - (Volts)
T
C
CB
C
CB
v V
f v I
3 - 170
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Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
DIODES
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