FMMT591 [ZETEX]
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR; PNP硅平面中功率晶体管
| 型号： | FMMT591 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
| 文件： | 总2页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
FMMT591
ISSUE 3 - OCTOBER 1995
✪
FEATURES
*
Low Equivalent on resistance RCE(sat)=355mΩ at 1A*
E
C
COMPLEMENTARY TYPE- FMMT491
PARTMARKING DETAIL - 591
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-80
-60
V
-5
-2
V
Peak Pulse Current
A
Continuous Collector Current
Base Current
IC
-1
A
IB
-200
mA
mW
°C
Power Dissipation at Tamb=25°C
Ptot
500
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
PARAMETER
SYMBOL MIN.
MAX.
UNITCONDITIONS.
Collector-Base Breakdown Voltage V(BR)CBO -80
V
V
IC=-100µA, IE=0
Collector-Emitter Breakdown
Voltage
V(BR)CEO -60
IC=-10mA, IB=0*
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
V(BR)EBO -5
ICBO
V
IE=-100µA, IC=0
-100
-100
-100
nA VCB=-60V
Emitter Cut-Off Current
IEBO
nA VEB=-4V, IC=0
nA VCES=-60V
Collector-Emitter Cut-Off Current
ICES
Collector-Emitter Saturation
Voltage
VCE(sat)
-0.3
-0.6
V
V
IC=-500mA,IB=-50mA*
IC=-1A, IB=-100mA*
IC=-1A, IB=-100mA*
IC=-1A, VCE=-5V*
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
VBE(sat)
VBE(on)
-1.2
-1.0
V
V
Static Forward Current Transfer
Ratio
hFE
100
100
80
IC=-1mA, VCE=-5V*
IC=-500mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-2A, VCE=-5V*
300
15
Transition Frequency
Output Capacitance
fT
150
MHz IC=-50mA, VCE=-10V
f=100MHz
Cobo
10
pF VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3 - 137
FMMT591
TYPICAL CHARACTERISTICS
0.6
0.5
0.4
0.3
0.2
0.1
0
0.6
0.5
0.4
0.3
0.2
0.1
0
10mA
100mA
1A
10A
10A
10A
10mA
100mA
1A
10A
1mA
1mA
IC-Collector Current
I -Collector Current
C
VCE(sat) v IC
VCE(sat) v IC
400
300
200
1.0
0.8
0.6
0.4
0.2
0
100
0
1mA
10mA
100mA
1A
10A
1mA
10mA
100mA
1A
IC-Collector Current
IC-Collector Current
hFE V IC
VBE(sat) v IC
10
1
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
0.01
1mA
10mA
100mA
1A
0.1V
1V
10V
100V
IC-Collector Current
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
3 - 138
相关型号：
FMMT591ATC
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
DIODES
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