FMMTA14 [ZETEX]
NPN SILICON PLANAR DARLINGTON TRANSISTORS; NPN硅平面达林顿晶体管
| 型号： | FMMTA14 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | NPN SILICON PLANAR DARLINGTON TRANSISTORS |
| 文件： | 总1页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 NPN SILICON PLANAR
DARLINGTON TRANSISTORS
ISSUE 4 - DECEMBER 1996
FMMTA12
FMMTA13
FMMTA14
COMPLEMENTARY TYPES - FMMTA12 NONE
FMMTA13 FMMTA63
E
FMMTA14 FMMTA64
C
B
PARTMARKING DETAILS
FMMTA12 3W
FMMTA13 1M
FMMTA14 1N
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VCES
VEBO
IC
FMMTA12
FMMTA13/14
UNIT
Collector-Base Voltage
40
40
40
V
V
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
20
V
10
V
Continuous Collector Current
Power Dissipation at Tamb=25°C
300
330
mA
mW
°C
Ptot
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL MIN.
MAX. UNIT
CONDITIONS.
Collector-Emitter FMMTA12
Breakdown Voltage FMMTA13/14
V(BR)CES
20
40
V
V
IC=100µA, IB=0*
IC=100µA, IB=0*
Collector Cut-Off
Current
FMMTA12
ICES
100
nA
VCB=15V, VBE=0
Collector Cut-Off
Current
FMMTA12
FMMTA13/14
ICBO
100
100
nA
nA
VCB=15V, IE=0
VCB=30V, IE=0
Emitter Cut-Off Current
IEBO
hFE
100
nA
VEB=10V, IC=0
Static Forward
Current Transfer
Ratio
FMMTA12
20K
5K
10K
10K
20K
IC=10mA, VCE=5V*
IC=10mA, VCE=5V*
IC=100mA, VCE=5V*
IC=10mA, VCE=5V*
IC=100mA, VCE=5V*
FMMTA13
FMMTA13
FMMTA14
FMMTA14
Collector-Emitter FMMTA12
Saturation Voltage FMMTA13/14
VCE(sat)
1.0
0.9
V
V
IC=10mA, IB=0.01mA
IC=100mA, IB=0.1mA
Base-Emitter
On Voltage
FMMTA12
FMMTA13/14
VBE(on)
1.4
2.0
V
V
IC=10mA, VCE=5V*
IC=100mA,VCE=5V*
*Measured under pulsed conditions. Pulse width =300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
For typical graphs see FMMT38A datasheet
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