FMMTA55 [ZETEX]
SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS; SOT23封装PNP硅平面中功率晶体管
| 型号： | FMMTA55 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
| 文件： | 总1页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 PNP SILICON PLANAR
FMMTA55
FMMTA56
MEDIUM POWER TRANSISTORS
✪
FEATURES
ISSUE 3 JANUARY 1996
E
*
Gain of 50 at IC=100mA
C
PARTMARKING DETAIL -
FMMTA55 - 2H
FMMTA56 - 2G
FMMTA55R - NB
FMMTA56R - MB
B
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
FMMTA55 FMMTA56
UNIT
V
Collector-Base Voltage
-60
-60
-80
-80
Collector-Emitter Voltage
Emitter-Base Voltage
V
-4
V
Continuous Collector Current
Power Dissipation at Tamb=25°C
-500
330
mA
mW
°C
Ptot
Operating and Storage Temperature
Range
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
FMMTA55
FMMTA56
PARAMETER
SYMBOL MIN. MAX. MIN. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V(BR)EBO
ICES
-60
-4
-80
-4
V
IC=-1mA, IB=0*
Emitter-Base
Breakdown Voltage
V
IE=-100µA, IC=0
Collector-Emitter
Cut-Off Current
-0.1
-0.1
-0.1
-0.1
VCE=-60V
µA
µA
Collector-Base
Cut-Off Current
ICBO
VCB=-80V, IE=0
VCB=-60V, IE=0
Static Forward
Current Transfer Ratio
hFE
50
50
50
50
IC=-10mA, VCE=1V*
IC=-100mA, VCE=1V*
Collector-Emitter
Saturation Voltage
VCE(sat)
VBE(on)
fT
-0.25
-1.2
-0.25
-1.2
V
V
IC=-100mA,
IB=-10mA*
Base-Emitter
Turn-On Voltage
IC=-100mA, VCE=-1V*
Transition
Frequency
100
100
MHz IC=-10mA, VCE=-2V
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
3 - 177
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