FMMV2103 [ZETEX]
SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODES; SOT23封装硅平面变容二极管
| 型号： | FMMV2103 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODES |
| 文件： | 总1页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 SILICON PLANAR
FMMV2101
to
FMMV2109
VARIABLE CAPACITANCE DIODES
✪
ISSUE 3 JANUARY 1996
PIN CONFIGURATION
PARTMARKING DETAILS
2
SEE TUNING CHARACTERISTICS
1
3
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VR
VALUE
UNIT
V
Reverse Voltage
30
200
Forward Current
IF
mA
mW
°C
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Ptot
330
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
V
CONDITIONS.
Reverse Breakdown
Voltage
VBR
30
IR = 10µA
Reverse current
IR
20
nA
nH
VR = 25V
Series Inductance
LS
3.0
f=250MHz
Lead length≈1.5mm
Diode Capacitance
Temperature Coefficient
TCC
CC
280
0.15
400
ppm/ °C VR = 4V, f=1MHz
Lead length≈1.5mm
Case Capacitance
pF
f=1MHz
TUNING CHARACTERISTICS (at T
amb
= 25°C).
Nominal Capacitance (pF)
VR = 4V, f=1MHz
Q Figure of MERIT
VR = 4V, f=50MHz
Turning Ratio
C2 / C30
f=1MHz
Type No.
Partmark
Detail
Min.
6.1
Nom.
6.8
Max.
7.5
Min.
2.5
2.6
2.6
2.6
2.7
2.7
2.7
Max.
FMMV2101
FMMV2103
FMMV2104
FMMV2105
FMMV2107
FMMV2108
FMMV2109
450
400
400
400
350
300
280
3.3
3.3
3.3
3.3
3.3
3.3
3.3
6R
6G
6H
6J
9.0
10.0
12.0
15.0
22.0
27.0
33.0
11.0
13.2
16.5
24.2
29.7
36.3
10.8
13.5
19.8
24.3
29.3
6L
6M
6N
*
SELECTED DEVICE RANGE OFFERED ONLY
3 - 185
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