FXT455 [ZETEX]
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR; NPN硅平面中功率晶体管
| 型号： | FXT455 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：29K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN SILICON PLANAR
FXT455
MEDIUM POWER TRANSISTOR
ISSUE 1 SEPT 93
FEATURES
*
*
*
140 Volt VCEO
1 Amp continuous current
Ptot= 1 Watt
B
C
E
E-Line
REFER TO ZTX455 FOR GRAPHS
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
160
Collector-Emitter Voltage
Emitter-Base Voltage
140
V
5
V
Peak Pulse Current
2
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
1
1
A
Ptot
W
°C
Tj:Tstg
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
PARAMETER
SYMBOL MIN.
V(BR)CBO 160
TYP.
MAX. UNIT
V
CONDITIONS.
Collector-Base
Breakdown Voltage
IC=100µA, IE=0
IC=10mA, IB=0*
IE=100µA, IC=0
VCB=140V, IE=0
Collector-Emitter
Sustaining Voltage
VCEO(sus) 140
V
V
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
Collector Cut-Off
Current
ICBO
0.1
µA
Emitter Cut-Off Current IEBO
0.1
0.7
VEB=4V, IC=0
µA
Collector-Emitter
Saturation Voltage
VCE(sat)
V
IC=150mA, IB=15mA*
Static Forward Current hFE
Transfer Ratio
100
100
300
IC=150mA, VCE=10V*
IC=1A, VCE=10V*
10
Transition
Frequency
fT
MHz
pF
IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Cobo
15
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3-34
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