FXTA42STZ [ZETEX]
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3;
| 型号： | FXTA42STZ |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3 |
| 文件： | 总1页 (文件大小：26K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN SILICON PLANAR
FXTA42
HIGH VOLTAGE TRANSISTOR
ISSUE 1 SEPT 93
FEATURES
*
300 Volt VCEO
APPLICATIONS
*
Telephone dialler circuits
B
C
E
REFER TO MPSA42 FOR GRAPHS
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
VALUE
UNIT
V
Collector-Base Voltage
300
300
Collector-Emitter Voltage
V
Emitter-Base Voltage
6
V
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
500
mA
mW
°C
Ptot
680
Tj:Tstg
-55 to +175
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
V
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
300
300
6
IC=100µA, IE=0
IC=1mA, IB=0*
IE=100µA, IC=0
Collector-Emitter
Breakdown Voltage
V
V
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
0.1
VCB=200V, IE=0
µA
Emitter Cut-Off Current IEBO
0.1
0.5
VEB=6V, IC=0
µA
Collector-Emitter
Saturation Voltage
VCE(sat)
V
IC=20mA, IB=2mA
IC=20mA, IB=2mA
Base-Emitter
Saturation Voltage
VBE(sat)
0.9
V
Static Forward Current hFE
Transfer Ratio
25
40
40
IC=1mA, VCE=10V*
IC=10mA, VCE=10V*
IC=30mA, VCE=10V*
Transition
Frequency
fT
50
MHz
pF
IC=10mA, VCE=20V
f=20MHz
Output Capacitance
Cobo
6
VCB=20V, f=1MHz
3-64
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