FZT755 [ZETEX]
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR; NPN硅平面中功率晶体管
| 型号： | FZT755 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
| 文件： | 总2页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
FZT755
ISSUE 4 FEBRUARY 1996
✪
FEATURES
*
*
*
25 Volt VCEO
C
Low saturation voltage
Excellent hFE specified up to 6A (pulsed).
E
COMPLEMENTARY TYPE
PARTMARKING DETAIL
FZT655
FZT755
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-150
Collector-Emitter Voltage
-150
V
Emitter-Base Voltage
-5
V
Peak Pulse Current
-2
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
-1
2
A
Ptot
W
°C
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
V
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
-150
-150
-5
IC=-100µA
Collector-Emitter
Breakdown Voltage
V
V
IC=-10mA*
Emitter-Base
Breakdown Voltage
IE=-100µA
Collector Cut-Off Current ICBO
-0.1
-0.1
V
CB=-125V
µA
µA
Emitter Cut-Off Current
IEBO
VEB=-3V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.5
-0.5
V
V
IC=-500mA, IB=-50mA*
IC=-1A, IB=-200mA*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
-1.1
V
IC=-500mA, IB=-50mA*
Base-Emitter
Turn-On Voltage
-1.0
V
IC=-500mA, VCE=-5V*
Static Forward Current
Transfer Ratio
50
50
20
IC=-10mA, VCE=-5V*
IC=-500mA, VCE=-5V*
IC=-1A, VCE=-5V*
300
20
Transition Frequency
fT
30
MHz
pF
IC=-10mA, VCE=-20V
f=20MHz
Output Capacitance
Cobo
VCB=-10V f=1MHz
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
3 - 238
FZT755
TYPICAL CHARACTERISTICS
I
- Collector Current (Amps)
I
- Collector Current (Amps)
Switching Speeds
VCE(sat) v IC
I
- Collector Current (Amps)
I
- Collector Current (Amps)
hFE v IC
VBE(sat) v IC
10
1
0.1
0.01
µ
0.1
1
10
100
VCE - Collector Emitter Voltage (V)
I
- Collector Current (Amps)
VBE(on) v IC
Safe Operating Area
3 - 239
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