UBCX5316 [ZETEX]
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon;
| 型号： | UBCX5316 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon 晶体管 |
| 文件： | 总1页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 – MARCH 2001
BCX5316
C
COMPLIMENTARY TYPE – BCX5616
PARTMARKING DETAIL – AL
E
C
B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-100
Collector-Emitter Voltage
Emitter-Base Voltage
-80
V
-5
V
Peak Pulse Current
-1.5
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
-1
1
A
Ptot
W
°C
Tj:Tstg
-65 to +150
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
-100
-80
-5
V
V
V
IC =-100µA
Breakdown voltage
Collector-Emitter
Breakdown Voltage
IC =-10mA
Emitter-Base
Breakdown Voltage
IE =-10µA
Collector Cut-Off
Current
-0.1
-20
µA
µA
V
V
CB =-30V
CB =-30V, Tamb =150°C
Emitter Cut-Off Current IEBO
-10
µA
VEB =-4V
Collector-Emitter
VCE(sat)
VBE(on)
hFE
-0.5
V
IC =-500mA, IB =-50mA*
Saturation Voltage
Base-Emitter Turn-On
Voltage
-1.0
250
V
IC =-500mA, VCE =-2V*
IC =-5mA, VCE =-2V*
Static Forward Current
Transfer Ratio
25
100
25
I
C =-150mA, VCE =-2V*
IC =-500mA, VCE =-2V*
Transition Frequency
Output Capacitance
fT
150
MHz IC =-50mA, VCE =-10V,
f=100MHz
Cobo
25
pF
VCB =-10V, f=1MHz
*Measured under pulsed conditions.
TBA
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