UFCX690B [ZETEX]

Small Signal Bipolar Transistor, 2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN;


型号：	UFCX690B
厂家：	ZETEX SEMICONDUCTORS
描述：	Small Signal Bipolar Transistor, 2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN
文件：	总3页 (文件大小：81K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SOT89 NPN SILICON POWER

FCX690B

(SWITCHING) TRANSISTOR

ISSSUE 1 - MARCH 1999

FEATURES

2W POWER DISSIPATION

6A Peak Pulse Current

Gain of 400 @I_C=1Amp

Very Low Saturation Voltage

Complimentary Type -

Partmarking Detail -

FCX790A

690

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current **

Continuous Collector Current

Power Dissipation at T_amb=25°C

I_C

P_tot

1 †

2 ‡

Operating and Storage Temperature Range

T_j:T_stg

-55 to +150

°C

†

‡

recommended P_totcalculated using FR4 measuring 15x15x0.6mm

Maximum power dissipation is calculated assuming that the device is mounted on FR4

substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by

other suppliers.

**Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%

Spice parameter data is available upon request for these devices

Refer to the handling instructions for soldering surface mount components.

FCX690B

ELECTRICAL CHARACTERISTICS (at T

= 25°C)

amb

PARAMETER

SYMBOL Min

Typ

Max

UNIT

CONDITIONS.

I_C=100 A

Collector-Base

Breakdown Voltage

V_(BR)CBO45

Collector-Emitter

V_(BR)CEO45

I_C=10mA*

I_E=100 A

Breakdown Voltage

Emitter-Base

Breakdown Voltage

V_(BR)EBO

Collector Cut-Off Current I_CBO

0.1

_CB=35V

_EB=4V

Emitter Cut-Off Current

I_EBO

Collector-Emitter

Saturation Voltage

V_CE(sat)

300

I_C=0.1A, I_B=0.5mA *

I_C=1A, I_B=5mA *

Base-Emitter

V_BE(sat)

V_BE(on)

h_FE

0.9

I_C=1A, I_B=10mA *

Saturation Voltage

Base-Emitter

Turn-On Voltage

0.85

I_C=1A, V_CE=2V *

Static Forward Current

Transfer

Ratio

500

400

150

I_C=100mA, V_CE=2V*

I_C=1A, V_CE=2V*

I_C=2A, V_CE=2V*

Transition Frequency

f_T

150

MHz

I_C=50mA, V_CE=5V

f=50MHz

Input Capacitance

Output Capacitance

Switching Times

C_ibo

200

V_EB=0.5V, f=1MHz

C_obo

V_CB=10V, f=1MHz

t_on

t_off

1300

I_C=500mA, I_B1=I_B2=50mA

V_CC=10V

*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%

FCX690B

TYPICAL CHARACTERISTICS

^amb=25°C

-55°C

+25°C

+100°C

+175°C

C B

=200

=100

C B

I /I =10

C B

I /I =100

0.8

0.6

0.4

0.2

C B

I /I

0.8

0.6

0.4

0.2

0.01

0.1

0.01

0.1

- Collector Current (Amps)

IC - Collector Current (Amps)

CE(sat)

v I

+100°C

+25°C

-55°C

V^CE=2V

-55°C

+25°C

+100°C

+175°C

1.6

C B

I /I =100

1.6

1.4

1.2

1.5K

1.4

1.2

1.0

0.8

1.0

0.8

0.6

0.4

0.2

0.6

0.4

0.2

500

0.01

0.1

0.01

0.1

- Collector Current (Amps)

FE v I

- Collector Current (Amps)

BE(sat) v I

Single Pulse Test at T^amb=25°C

-55°C

+25°C

+100°C

+175°C

V^CE=2V

1.6

1.4

1.2

1.0

0.8

0.6

D.C.

100ms

10ms

1.0ms

0.1ms

0.1

0.4

0.2

0.01

0.1

100

- Collector Current (Amps)

BE(on)

^CE- Collector Voltage (Volts)

v I

Safe Operating Area

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