UZHCS756 [ZETEX]
Rectifier Diode, Schottky, 1 Element, 1.5A, Silicon, SOT-23, 3 PIN;
| 型号： | UZHCS756 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | Rectifier Diode, Schottky, 1 Element, 1.5A, Silicon, SOT-23, 3 PIN 光电二极管 |
| 文件： | 总3页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE “SuperBAT”
ZHCS756
ISSUE 1- NOVEMBER 1997
✪
FEATURES:
1
•
Low VF
C
•
High Current Capability
2
1
APPLICATIONS:
•
•
•
DC - DC converters
A
3
Mobile telecomms
PCMCIA
3
PARTMARK DETAIL: S76
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VR
VALUE
60
UNIT
V
Continuous Reverse Voltage
Forward Current (Continuous)
Forward Voltage @ IF = 750mA
Average Peak Forward Current; D.C. = 50%
IF
750
mA
mV
mA
VF
610
IFAV
IFSM
1500
12
5
A
A
Non Repetitive Forward Current t≤100µs
t≤10ms
Power Dissipation at Tamb= 25° C
Storage Temperature Range
Junction Temperature
Ptot
Tstg
Tj
500
-55 to + 150
125
mW
° C
° C
ELECTRICAL CHARACTERISTICS (at T
= 25° C unless otherwise stated).
amb
PARAMETER
SYMBOL
V(BR)R
MIN.
60
TYP.
MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage
80
V
IR= 300µA
Forward Voltage
VF
250
285
350
440
520
600
760
290
330
410
500
610
700
900
mV
mV
mV
mV
mV
mV
mV
IF= 50mA*
IF= 100mA*
IF= 250mA*
IF= 500mA*
IF= 750mA*
IF= 1000mA*
IF= 1500mA*
Reverse Current
IR
50
100
VR= 45V
µA
pF
ns
Diode Capacitance
CD
trr
17
12
f= 1MHz,VR= 25V
switched from
IF = 500mA to IR
Measured at IR
Reverse Recovery
Time
=
500mA
=
50mA
*Measured under pulsed conditions. Pulse width= 300µs; duty cycle ≤2%.
ZHCS756
TYPICAL CHARACTERISTICS
1
100m
110m
1m
100m
+125°C
10m
+100°C
1m
+50°C
100u
+25°C
10u
+125°C
+25°C
-55°C
1u
-55°C
100n
0
0.1
0.2
0.3
0.4
0.5
0.6
0
0
0
20
40
60
VF - Forward Voltage (V)
VR - Reverse Voltage (V)
IF v VF
IR v VR
1
0.8
0.6
0.4
0.2
0
0.5
0.4
0.3
0.2
0.1
0
Typical
Typical
t
1
DC
D=t 1/t
p
I F(pk)
Tj=125 C
t
D=0.5
p
I F(av) =DxI
PF(av) =I
F(pk)
xV
F(av)
F
D=0.2
D=0.1
t
1
D=t
1/t
p
I F(pk)
DC
D=0.5
D=0.2
D=0.1
D=0.05
t
p
D=0.05
I F(av) =DxI
PF(av) =I
F(pk)
xV
F(av)
F
60
70
80
90
100
110
120
0.2
0.4
0.6
0.8
1
TC - Case Temperature ( C)
IF(av) - Avg Fwd Curr (A)
IF(av) v TC
PF(av) v IF(av)
125
100
75
160
80
0
Rth=100°C/W
Rth=200°C/W
Rth=300°C/W
1
10
100
20
40
60
VR - Reverse Voltage (V)
VR - Reverse Voltage (V)
Ta v VR
CD v VR
ZHCS756
TYPICAL CHARACTERISTICS
MAXIMUM TRANSIENT THERMAL RESISTANCE
* Reference above figure, devices were mounted on a 15mmx15mm ceramic substrate.
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