UZVN4206ASTOA [ZETEX]
Small Signal Field-Effect Transistor, 0.6A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3;
| 型号： | UZVN4206ASTOA |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | Small Signal Field-Effect Transistor, 0.6A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3 开关 晶体管 |
| 文件： | 总3页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN4206A
ISSUE 2 – JUNE 94
FEATURES
*
*
60 Volt VDS
RDS(on) = 1 Ω
D
G
S
E-LINE
TO92 COMPATIBLE
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VDS
VALUE
UNIT
V
Drain-Source Voltage
60
600
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
ID
mA
A
IDM
8
Gate-Source Voltage
VGS
V
± 20
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Ptot
0.7
W
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS
60
V
ID=1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th)
1.3
3
V
ID=1mA, VDS= VGS
Gate-Body Leakage
IGSS
IDSS
100
nA
V
GS=± 20V, VDS=0V
Zero Gate Voltage Drain
Current
10
100
V
V
DS=60V, VGS=0
DS=48V, VGS=0V, T=125°C(2)
µA
µA
On-State Drain Current(1)
ID(on)
3
A
VDS=25V, VGS=10V
Static Drain-Source On-State
Resistance (1)
RDS(on)
1
1.5
V
V
GS=10V,ID=1.5A
GS=5V,ID=500mA
Ω
Ω
Forward Transconductance(1)(2gfs
)
300
mS
VDS=25V,ID=1.5A
Input Capacitance (2)
Ciss
100
60
pF
pF
Common Source Output
Capacitance (2)
Coss
VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance Crss
(2)
20
pF
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
td(on)
tr
td(off)
tf
8
ns
ns
ns
ns
12
12
15
V
DD ≈25V, ID=1.5A
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
ZVN4206A
TYPICAL CHARACTERISTICS
10
8
10
V
20V
16V
14V
12V
GS=
V
GS=
20V
16V
14V
8
6
12V
6
10V
9V
10V
9V
8V
8V
4
2
4
2
0
7V
6V
7V
6V
5V
5V
4.5V
4.5V
4V
4V
0
3.5V
3.5V
2
4
6
8
10
0
10
20
30
40
50
VDS - Drain Source Voltage (Volts)
VDS - Drain Source Voltage (Volts)
Output Characteristics
Saturation Characteristics
10
6
8
6
V
DS=10V
4
2
0
4
2
I
D=
3A
1.5A
0.5A
0
0
2
4
6
8
10
0
2
4
6
8
10
VGS-Gate Source Voltage (Volts)
VGS-Gate Source Voltage (Volts)
Transfer Characteristics
Voltage Saturation Characteristics
4.5V
VGS=3.5V
8V 10V
6V
2.6
10
2.4
2.2
2.0
1.8
1.6
V
GS=10V
ID=1.5A
e R
c
14V
tan
s
i
1.0
es
e R
rc
1.4
1.2
1.0
0.8
0.6
u
o
-S
20V
n
Drai
V
I
GS=VDS
D=1mA
0.1
-50
100
150
125 175 200 225
-25
0
25 50 75
10
0.1
1.0
ID-Drain Current (Amps)
Tj-Junction Temperature (°C)
Normalised RDS(on) and VGS(th) v Temperature
3-382
On-resistance v drain current
ZVN4206A
TYPICAL CHARACTERISTICS
1000
1000
900
800
900
800
700
600
700
600
VDS=10V
VDS=10V
500
500
400
300
200
400
300
200
100
0
100
0
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
V
GS-Gate Source Voltage (Volts)
ID- Drain Current (Amps)
Transconductance v drain current
Transconductance v gate-source voltage
VDS=
60V
40V
20V
16
14
200
160
120
ID=1.5A
12
10
8
80
40
0
6
C
iss
4
2
0
C
oss
C
rss
0
10
20
30 40
50
60
70
80
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Q-Charge (nC)
0
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
3-383
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