ZTX384C [ZETEX]
Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, E-LINE PACKAGE-3;型号: | ZTX384C |
厂家: | ZETEX SEMICONDUCTORS |
描述: | Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, E-LINE PACKAGE-3 放大器 晶体管 |
文件: | 总2页 (文件大小:42K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NPN SILICON PLANAR
ZTX384C
LOW NOISE TRANSISTOR
ISSUE 2 MARCH 94
FEATURES
*
*
*
30 Volt VCEO
High Gain
Low Noise
APPLICATIONS
Audio circuits
*
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
VALUE
UNIT
V
Collector-Base Voltage
45
Collector-Emitter Voltage
Emitter-Base Voltage
30
6
V
V
Continuous Collector Current
Power Dissipation
200
mA
mW
°C
Ptot
350
Operating and Storage Temperature Range
Tj:Tstg
-55 to +175
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
45
30
6
V
IC=10µA, IE=0
IC=2mA, IB=0
IE=10µA, IC=0
VCB=30V, IE=0
VEB=4V, IC=0
Collector-Emitter
Breakdown Voltage
V
Emitter-Base
Breakdown Voltage
V
Collector Cut-Off
Current
15
15
nA
nA
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
0.25
0.6
V
V
IC=10mA, IB=0.5mA*
IC=100mA, IB=5mA*
Base-Emitter
Saturation Voltage
VBE(sat)
1.2
0.7
V
V
IC=100mA, IB=5mA*
IC=2mA, VCE=5V
Base-Emitter
Turn On Voltage
VBE(on)
0.55
Static Forward Current hFE
Transfer Ratio
100
250
130
IC=10µA, VCE=5V
IC=2mA, VCE=5V
IC=100mA, VCE=5V*
400
3-167
ZTX384C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Output Capacitance
Input Capacitance
Cobo
Cibo
N
2.5
11
5
4
pF
pF
dB
VCB=10V, f=1MHz
VEB=0.5V, f=1MHz
Noise Figure
(Wide Band)
IC=200µA, VCE=5V
f=30Hz to 15KHz at
-3dB points, RS=2KΩ
Flicker Noise
Nf
0.135
900
µV
IC=200µA, VCE=5V
f=10Hz to 50Hz at -3dB
points, RS=2KΩ
Small Signal Static
Forward Current
Transfer Ratio
hfe
450
IC=2mA, VCE=5V, f=1kHz
*Measured under pulsed conditions. Pulse width=300µs.Duty cyle ≤ 2%
3-168
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