ZTX449 [ZETEX]
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR; NPN硅平面中功率晶体管
| 型号： | ZTX449 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
| 文件： | 总2页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN SILICON PLANAR
ZTX449
MEDIUM POWER TRANSISTOR
ISSUE 2 MARCH 1994
FEATURES
*
*
*
30 Volt VCEO
1 Amp continuous current
Ptot= 1 Watt
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
50
Collector-Emitter Voltage
Emitter-Base Voltage
30
V
5
V
Peak Pulse Current
2
A
Continuous Collector Current
Power Dissipation at Tamb = 25°C
Operating and Storage Temperature Range
IC
1
1
A
Ptot
W
°C
Tj:Tstg
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
TYP.
PARAMETER
SYMBOL MIN.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
50
30
5
V
V
V
IC=100µA, IE=0
IC=10mA, IB=0
IE=100µA, IC=0
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
0.1
10
V
V
CB=40V
CB=40V, Tamb=100°C
µA
µA
Emitter Cut-Off Current IEBO
0.1
V
EB=4V, IC=0
µA
Collector-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
VBE(on)
0.5
1
V
V
IC=1A, IB=100mA*
IC=2A, IB=200mA*
Base-Emitter
Saturation Voltage
1.25
V
IC=1A, IB=100mA*
Base-Emitter
Turn-on Voltage
1
V
IC=1A,VCE=2V*
Static Forward Current hFE
Transfer Ratio
70
100
80
IC=50mA, VCE=2V*
IC=500mA, VCE=2V*
IC=1A, VCE=2V*
300
15
40
IC=2A, VCE=2V*
Transition Frequency
Output Capacitance
fT
150
MHz
pF
IC=50mA, VCE=10V
f=100MHz
Cobo
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3-173
ZTX449
TYPICAL CHARACTERISTICS
tf,tr,td
ns
IB1=IB2=IC/10
VCE=10V
0.8
0.6
150
tf
IC/IB=10
ts
ns
100
tr
0.4
0.2
800
600
400
200
0
td
50
ts
tf
tr
ts
td
0
0.01
0
0.001
0.01
0.1
0.1
1
10
1
IC - Collector Current (Amps)
CE(sat)
IC - Collector Current (Amps)
C
V
v I
Switching Speeds
1.8
1.6
1.4
1.2
1.0
0.8
200
160
120
80
IC/IB=10
VCE=2V
0.6
0.4
0.2
40
0
0.001
0.001
0.01
0.1
0.01
0.1
1
10
1
10
IC - Collector Current (Amps)
FE
IC - Collector Current (Amps)
BE(sat)
C
C
v I
h
v I
V
Single Pulse Test at Tamb=25°C
10
1.8
1.6
1.4
1.2
1.0
0.8
1
VCE=2V
D.C.
1s
100ms
10ms
1.0ms
300µs
100µs
0.6
0.4
0.2
0.1
0.001
0.01
0.1
1
10
0.01
0.1
1
10
100
IC - Collector Current (Amps)
BE(on)
VCE - Collector Voltage (Volts)
C
V
v I
Safe Operating Area
3-174
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