ZTX549A [ZETEX]
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS; PNP硅平面中功率晶体管
| 型号： | ZTX549A |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
| 文件： | 总3页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP SILICON PLANAR
ZTX549
ZTX549A
MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
*
*
*
30 Volt VCEO
1 Amp continuous current
Ptot= 1 Watt
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-35
-30
-5
V
V
Peak Pulse Current
-2
A
Continuous Collector Current
IC
-1
A
Power Dissipation: at Tamb=25°C
derate above 25°C
Ptot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
Collector-Base Breakdown V(BR)CBO
Voltage
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
-35
-30
-5
V
V
V
IC=-100µA
IC=-10mA
IE=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V(BR)EBO
ICBO
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
-0.1
-10
V
CB=-30V
µA
µA
VCB=-30V, Tamb=100°C
Emitter Cut-Off Current
IEBO
-0.1
VEB=-4V
µA
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.25
-0.50
-0.50
-0.75
V
V
IC=-1A, IB=-100mA*
IC=-2A, IB=-200mA*
ZTX549A
-0.30
-1.25
V
V
IC=-100mA, IB=-1mA*
IC=-1A, IB=-100mA*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
-0.9
Base-Emitter
Saturation Voltage
-0.85
-1
V
IC=-1A, VCE=-2V*
Static Forward Current
Transfer Ratio
70
80
40
200
130
80
IC=-50mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
ZTX549
100
150
160
200
300
500
IC=-500mA, VCE=-2V*
IC=-500mA, VCE=-2V*
ZTX549A
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3-191
ZTX549
ZTX549A
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
MHz
CONDITIONS.
Transition Frequency
fT
100
IC=-100mA, VCE=-5V
f=100MHz
Output Capacitance
Switching Times
Cobo
ton
25
pF
ns
ns
VCB=-10V, f=1MHz
300
50
IC=-500mA, VCC=-10V
IB1=IB2=-50mA
toff
3-192
ZTX549
ZTX549A
TYPICAL CHARACTERISTICS
ts
(ns)
1800
td,tr,tf
(ns)
180
IB1=IB2=IC/10
0.8
0.6
160
140
120
1600
1400
1200
tr
ts
100
80
60
40
20
1000
800
600
400
200
0
0.4
0.2
0
IC/IB=100
td
IC/IB=10
tf
0
0.01
0.1
1
10
0.01
0.1
1
IC - Collector Current (Amps)
CE(sat)
IC - Collector Current (Amps)
C
V
v I
Switching Speeds
200
1.4
160
120
80
1.2
1.0
0.8
VCE=2V
IC/IB=100
IC/IB=10
40
0.6
0.01
0.1
1
10
0.001
0.01
0.1
1
10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
BE(sat)
FE
h
C
v I
C
v I
V
Single Pulse Test at Tamb=25°C
10
1.0
0.9
IC/IB=10
1
D.C.
1s
0.8
0.7
100ms
10ms
1.0ms
0.3ms
0.1ms
0.1
0.6
0.01
0.001
0.1
1
10
0.01
0.1
1
10
100
IC - Collector Current (Amps)
BE(on)
VCE - Collector Voltage (Volts)
C
V
v I
Safe Operating Area
3-193
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