ZTX603 [ZETEX]
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS; NPN硅平面中功率达林顿晶体管
| 型号： | ZTX603 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS |
| 文件： | 总3页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 1 MARCH 94
ZTX602
ZTX603
FEATURES
*
*
*
*
80 Volt VCEO
1 Amp continuous current
Gain of 2K at IC=1 Amp
Ptot= 1 Watt
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
ZTX602
80
ZTX603
100
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
V
A
A
60
80
10
4
Peak Pulse Current
Continuous Collector Current
IC
1
Power Dissipation at Tamb = 25°C
derate above 25°C
Ptot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL
ZTX602
ZTX603
UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO 80
100
80
V
V
V
IC=100µA
IC=10mA*
IE=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V(BR)EBO
ICBO
60
10
Emitter-Base
Breakdown Voltage
10
Collector Cut-Off
Current
0.01
10
V
CB=60V
VCB=80V
CB=60V,T
CB=80V,T
µA
µA
µA
µA
0.01
V
=100°C
=100°C
10
V
Emitter Cut-Off
Current
IEBO
0.1
10
0.1
VEB=8V
µA
Colllector-Emitter
Cut-Off Current
ICES
VCES=60V
VCES=80V
µA
µA
10
Collector-Emitter
Saturation Voltage
VCE(sat)
1.0
1.0
1.0
1.0
V
V
IC=400mA,
IB=0.4mA*
IC=1A, IB=1mA*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
1.8
1.7
1.8
1.7
V
V
IC=1A, IB=1mA*
Base-Emitter
Turn-On Voltage
IC=1A, VCE=5V*
3-209
ZTX602
ZTX603
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL
ZTX602
ZTX603
UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Static Forward
Current Transfer
Ratio
hFE
2K
5K
2K
0.5K
2K
5K
100K 2K
IC=50mA, VCE=5V
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
100K
0.5K
IC=2A, VCE=5V*
Transition Frequency fT
150
150
MHz IC=100mA, VCE=10V
f=20MHz
Input Capacitance
Cibo
90 Typical
15 Typical
0.5 Typical
1.1 Typical
pF
pF
µs
µs
VEB=500mV, f=1MHz
VCB=10V, f=1MHz
Output Capacitance Cobo
Switching Times
ton
toff
IC=500mA, VCE=10V
IB1=IB2=0.5mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
R
= 50KΩ
R = 10KΩ
R
= 200KΩ
1.0
0.8
0.6
0.4
0.2
0
R
R
= 1MΩ
= ∞
DC Conditions
ZTX603
ZTX602
1
10
100
200
VCE - Collector-Emitter Voltage (Volts)
Voltage Derating Graph
The maximum permissible operational temperature can be obtained from this graph using
the following equation
Power (max ) − Power (act)
T
=
)
+25°C
(
0.0057
Tamb(max)= Maximum operating ambient temperature
Power(max) = Maximum power dissipation figure, obtained from the above graph for a
given VCE and source resistance (RS)
Power(actual)= Actual power dissipation in users circuit
3-210
ZTX602
ZTX603
TYPICAL CHARACTERISTICS
2.5
1.8
1.6
1.4
-55°C
+25°C
+100°C
+175°C
-55°C
+25°C
+100°C
VCE=5V
2.0
1.5
1.0
0.5
1.2
1.0
0.8
0.6
0.4
0.2
IC/IB=100
0
0.01
0.1
1
10
0.001
0.01
0.1
1
10
IC - Collector Current (Amps)
CE(sat)
IC - Collector Current (Amps)
FE
C
v I
h
C
v I
V
2.2
2.0
-55°C
+25°C
+100°C
+175°C
-55°C
+25°C
+100°C
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.8
1.6
1.4
1.2
VCE=5V
1.0
0.8
0.6
0.4
0.2
IC/IB=100
0.01
0.1
1
10
0.01
0.1
1
10
IC - Collector Current (Amps)
BE(sat)
IC - Collector Current (Amps)
BE(on)
C
v I
V
C
v I
V
Single Pulse Test at Tamb=25°C
10
1
D.C.
1s
100ms
10ms
1.0ms
100µs
0.1
ZTX603
ZTX602
0.01
1
10
100
1000
VCE - Collector Voltage (Volts)
Safe Operating Area
3-211
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