ZTX704 [ZETEX]
PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS; PNP硅平面中功率达林顿晶体管
| 型号： | ZTX704 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS |
| 文件： | 总3页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 3 MAY 94
ZTX704
ZTX705
FEATURES
*
*
*
*
120 Volt VCEO
1 Amp continuous current
Gain of 3K at IC=1 Amp
Ptot=1 Watt
APPLICATIONS
Lamp, solenoid and relay drivers
C
B
E
*
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
ZTX704
-120
ZTX705
-140
-120
-10
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
V
A
A
-100
Peak Pulse Current
-4
-1
Continuous Collector Current
IC
Power Dissipation at Tamb = 25°C
derate above 25°C
Ptot
1
5.7
W
mW/ °C
Operating and Storage Temperature
Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX704
ZTX705
UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO
-120
-140
-120
-10
V
V
V
IC=-100µA
IC=-10mA*
IE=-100µA
Collector-Emitter
Breakdown Voltage
VCEO(SUS) -100
V(BR)EBO -10
ICBO
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
-0.1
-10
V
CB=-100V
CB=-120V
VCB=-100V, T
µA
µA
µA
µA
-0.1
V
=100°C
amb
=100°C
-10
-10
VCB=-120V, T
amb
Collector Cut-Off
Current
ICES
-10
VCES=-80V
µA
Emitter Cut-Off
Current
IEBO
-0.1
-0.1
VEB=-8V
µA
Collector-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
VBE(on)
-1.3
-2.5
-1.3
-2.5
V
V
IC=-1A, IB=-1mA*
IC=-2A, IB=-2mA*
Base-Emitter
Saturation Voltage
-1.8
-1.8
V
IC=-1A, IB=-10mA*
Base-Emitter
Turn-On Voltage
-1.7
-1.7
V
IC=-1A, VCE=-5V*
3-250
ZTX704
ZTX705
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
ZTX704
ZTX705
UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Static Forward
Current Transfer
Ratio
hFE
3K
3K
3K
2K
3K
3K
3K
2K
IC=-10mA, VCE=-5V*
IC=-100mA, VCE=-5V*
IC=-1A, VCE=-5V*
30K
30K
IC=-2A, VCE=-5V*
Transition
Frequency
fT
160 Typical
160 Typical MHz IC=-100mA, VCE=-10V
f=20MHz
Input Capacitance
Cibo
90 Typical
15 Typical
0.6 Typical
0.8 Typical
90 Typical
15 Typical
0.6 Typical
0.8 Typical
pF
pF
µs
µs
VEB=-0.5V, f=1MHz
VCE=-10V, f=1MHz
Output Capacitance Cobo
Switching Times ton
toff
IC=-0.5A, VCE=-10V
IB1=IB2=-0.5mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
1.0
R
= 22KΩ
R
R
R
= 100KΩ
= 1MΩ
= ∞
0.8
0.6
0.4
0.2
0
DC Conditions
1
10
100
VCE - Collector-Emitter Voltage (Volts)
Voltage Derating Graph
The maximum permissible operational temperature can be obtained from this graph using
the following equation
Power(max) − Power(act)
T
=
)
+25°C
(
0.0057
Tamb(max)= Maximum operating ambient temperature
Power(max) = Maximum power dissipation figure, obtained from the above graph for a
given VCE and source resistance (RS)
Power(actual)= Actual power dissipation in users circuit
3-251
ZTX704
ZTX705
TYPICAL CHARACTERISTICS
-55°C
+25°C
+100°C
+175°C
IC/IB=1000
+100°C
+25°C
-55°C
VCE=-5V
1.8
16k
14k
1.6
1.4
1.2
12k
10k
1.0
0.8
0.6
0.4
8k
6k
4k
2k
0
0.2
0.001
0.01
0.1
1
10 20
0.001
0.01
0.1
1
10 20
IC - Collector Current (Amps)
IC - Collector Current (Amps)
FE
h
C
v I
VCE(sat) v IC
2.4
-55°C
+25°C
+100°C
+175°C
-55°C
+25°C
+100°C
VCE=-5V
IC/IB=1000
1.8
1.6
1.4
1.2
2.2
2.0
1.8
1.6
1.0
0.8
0.6
0.4
0.2
1.4
1.2
1.0
0.8
0.6
0.001
0.01
0.1
1
10 20
0.001
0.01
0.1
1
10 20
IC - Collector Current (Amps)
BE(sat)
IC - Collector Current (Amps)
BE(on)
C
v I
V
C
v I
V
Single Pulse Test at Tamb=25°C
10
1
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.1
ZTX704
1
10
100
1000
VCE - Collector Voltage (Volts)
Safe Operating Area
3-252
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