ZUMT717 [ZETEX]
PNP SILICON POWER (SWITCHING) TRANSISTOR; PNP硅功率（开关）晶体管
| 型号： | ZUMT717 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | PNP SILICON POWER (SWITCHING) TRANSISTOR |
| 文件： | 总3页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Super323 SOT323 PNP SILICON POWER
(SWITCHING) TRANSISTOR
ZUMT717
ISSUE 1 - SEPTEMBER 1998
FEATURES
*
*
*
*
*
*
500mW POWER DISSIPATION
IC CONT 1.5A
3A Peak Pulse Current
Excellent HFE Characteristics Up To 3A (pulsed)
Extremely Low Saturation Voltage
Extremely Low Equivalent On Resistance; RCE(sat)
APPLICATIONS
*
*
*
Negative boost functions in DC-DC converters
Supply line switching in mobile phones and pagers
Motor drivers in camcorders and mini disk players
DEVICE TYPE
ZUMT717
COMPLEMENT
ZUMT617
PARTMARKING
T71
RCE(sat)
150mΩat 1.25A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
-12
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current**
Continuous Collector Current
Base Current
VCBO
VCEO
VEBO
ICM
IC
-12
V
-5
V
-3
A
-1.25
-200
A
IB
mA
mW
Power Dissipation at Tamb=25°C*
Ptot
385 †
500 ‡
Operating and Storage Temperature Tj:Tstg
Range
-55 to +150
°C
†
‡
Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
Maximum power dissipation is calculated assuming that the device is mounted on FR4
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
ZUMT717
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL
V(BR)CBO
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
-12
-12
-5
V
IC= -100µA
IC= -10mA*
IE= -100µA
VCB=-10V
VEB=-4V
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V(BR)EBO
ICBO
V
Emitter-Base
Breakdown Voltage
V
Collector Cut-Off
Current
-10
-10
-10
nA
nA
nA
Emitter Cut-Off
Current
IEBO
Collector Emitter
Cut-Off Current
ICES
VCES=-10V
Collector-Emitter
Saturation Voltage
VCE(sat)
-25
-40
mV
mV
mV
mV
mV
IC= -0.1A, IB= -10mA*
IC= -0.25A, IB=-10 mA*
IC= -0.5A, IB=-10 mA*
IC= -1A, IB= -50mA*
-55
-100
-175
-215
-240
-110
-160
-185
IC= -1.25A, IB= -100mA*
Base-Emitter
VBE(sat)
VBE(on)
hFE
-990
-1100 mV
IC= -1.25A, IB= -100mA*
Saturation Voltage
Base-Emitter
Turn-On Voltage
-850
-1000 mV
I = -1.25A, VCE= 2V*
C
Static Forward
Current Transfer
Ratio
300
300
200
125
75
490
450
340
250
140
80
IC= -10mA, VCE=-2V*
IC= -0.1A, VCE= -2V*
IC= -0.5A, VCE= -2V*
IC= -1.25A, VCE=-2V*
IC= -2A, VCE= -2V*
IC= -3A, VCE= -2V*
30
Transition
Frequency
fT
220
MHz IC= -50mA, VCE=-10 V
f= 100MHz
Output Capacitance Cobo
15
pF
ns
ns
VCB= -10V, f=1MHz
VCC= -10V, IC=-1A
Turn-On Time
Turn-Off Time
t(on)
t(off)
50
IB1=IB2=-100mA
135
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ZUMT717
TYPICAL CHARACTERISTICS
0.4
0.3
0.2
0.1
0
0.4
+25°C
IC/IB=50
0.3
IC/IB=10
IC/IB=50
IC/IB=100
-55°C
+25°C
+100°C
+150°C
0.2
0.1
0
1m
10m
100m
1
10
1m
10m
100m
1
10
IC - Collector Current (A)
IC - Collector Current (A)
VCE(sat) v IC
VCE(sat) v IC
800
600
400
200
0
1.0
0.8
0.6
0.4
0.2
0
IC/IB=50
VCE=2V
+100°C
+25°C
-55°C
-55°C
+25°C
+100°C
+150°C
1m
10m
100m
1
10
1m
10m
100m
1
10
IC - Collector Current (A)
IC - Collector Current (A)
hFE v IC
VBE(sat) v IC
10
1
1.0
0.8
0.6
0.4
0.2
0
DC
1s
100ms
10ms
1ms
-55°C
+25°C
+100°C
+150°C
100m
10m
100µs
100m
1
10
100
1m
10m
100m
1
10
IC - Collector Current (A)
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
相关型号：
ZUMT807-25TA
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
ZETEX
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