ZVN4210G [ZETEX]
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET; N沟道增强型垂直DMOS FET
| 型号： | ZVN4210G |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
| 文件： | 总3页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN4210G
ISSUE 2 - NOVEMBER 1995
FEATURES
D
*
Low RDS(on) = 1.5Ω
PARTMARKING DETAIL - ZVN4210
S
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
S YMBOL
VDS
VALUE
UNIT
V
Dra in -S o u rce Vo lta g e
100
Co n tin u o u s Drain Cu rren t at Ta m b=25°C
Pu ls ed Dra in Cu rre n t
ID
0.8
A
IDM
6
A
Ga te-S o u rce Vo lta g e
VGS
V
± 20
2
Po w er Dis s ip a tio n a t Ta m b=25°C
Op e ratin g a n d S to ra g e Te m p e ratu re Ra n g e
Pto t
W
Tj:Ts tg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherw ise stated).
am b
PARAMETER
S YMBOL MIN. MAX. UNIT CONDITIONS .
Dra in -S o u rce Bre akd o w n
Vo lta g e
BVDS S
100
V
ID=1m A, VGS=0V
Gate-Sou rce Threshold Voltage VGS (th )
0.8
2.4
V
ID=1m A, VDS= VGS
Ga te-Bo d y Lea ka g e
IGS S
IDS S
100
n A
V
GS=± 20V, VDS=0V
Ze ro Ga te Vo lta g e Dra in
Cu rre n t
10
100
VDS=100V, VGS=0
VDS=80V, VGS=0V, T=125°C(2)
µA
µA
On -S ta te Dra in Cu rre n t(1)
ID(o n )
2.5
A
VDS=25V, VGS=10V
VGS=10V,ID=1.5A
S tatic Drain -S o u rce On -S ta te
Res ista n ce (1)
RDS (o n )
1.5
1.8
Ω
Ω
VGS=5V,ID=500m A
Forward Transconductance(1)(2) g fs
250
m S
p F
p F
VDS=25V,ID=1.5A
In p u t Ca p a cita n ce (2)
Cis s
Co s s
100
40
Co m m o n S o u rce Ou tp u t
Cap acita n ce (2)
VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance (2) Crs s
12
4
p F
n s
n s
n s
n s
Tu rn -On De la y Tim e (2)(3)
Ris e Tim e (2)(3)
td (o n )
tr
8
VDD≈25V, ID=1.5A
Tu rn -Off De la y Tim e (2)(3)
Fa ll Tim e (2)(3)
td (o ff)
tf
20
30
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sam ple test.
(3) Switching tim es m easured with 50Ω source im pedance and <5ns rise tim e on a pulse generator
Spice param eter data is available upon request for this device
ZVN4210G
DRAIN-SOURCE DIODE CHARACTERISTICS
PARAMETER
S YMBOL MIN. TYP
MAX. UNIT CONDITIONS .
Dio d e Fo rw a rd Vo ltag e (1)
VS D
-
-
0.79
0.89
-
-
V
V
IS=0.32A, VGS=0V
IS=1.0A, VGS=0V
Reverse Reco very Tim e
(to IR=10%)
TRR
-
135
n s
IF=0.45A, VGS=0V,
IR=100m A, VR=10V
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sam ple test.
(3) Switching tim es m easured with 50Ω source im pedance and <5ns rise tim e on a pulse generator
Spice param eter data is available upon request for this device
ZVN4210G
TYPICAL CHARACTERISTICS
8V 10V
5V 6V
VGS=3V 3.5V
100
VGS=
5
4
10V
9V
8V
7V
3
2
6V
5V
10
4V
3.5V
3V
1
2.5V
2V
10
0
1
0.1
0
1
2
3
4
5
6
7
8
9
10
1.0
VDS - Drain Source Voltage (Volts)
ID-Drain Current (Am ps)
Saturation Characteristics
On-resistance v drain current
2.6
1000
900
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
800
VGS=10V
700
600
500
400
300
ID=1.5A
VDS=10V
VGS=VDS
ID=1mA
G
ate
T
h
200
100
0
res
h
o
l
d
V
o
l
t
a
g
e
V
-50
150
175 200 225
100
-25
0
25 50 75
125
0
2
3
4
5
1
ID(on)- Drain Current (Amps)
Tj-Junction Temperature (°C)
Transconductance v drain current
Normalised RDS(on) and VGS(th) v Temperature
VDD=
50V
20V
16
14
80V
200
160
120
ID=1.5A
12
10
8
6
80
Ciss
4
2
0
40
Coss
Crss
100
0
0
40
60
80
20
0
1
2
3
4
5
6
VDS-Drain Source Voltage (Volts)
Q-Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
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